APTGT30A170D1G [MICROSEMI]
Insulated Gate Bipolar Transistor, 45A I(C), 1700V V(BR)CES, N-Channel, MODULE-7;
| 型号： | APTGT30A170D1G |
| 厂家： | 
Microsemi |
| 描述： | Insulated Gate Bipolar Transistor, 45A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 局域网 电动机控制 栅 晶体管 |
| 文件： | 总3页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
APTGT30A170D1
VCES = 1700V
IC = 30A @ Tc = 80°C
Phase leg
Trench IGBT® Power Module
Application
•
•
•
•
Welding converters
3
Q1
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
4
5
Features
1
•
Trench + Field Stop IGBT® Technology
Q2
-
-
-
-
-
-
-
-
Low voltage drop
Low tail current
Switching frequency up to 20 kHz
Soft recovery parallel diodes
Low diode VF
Low leakage current
Avalanche energy rated
RBSOA and SCSOA rated
6
7
2
•
•
•
•
•
Kelvin emitter for easy drive
Low stray inductance
High level of integration
Kelvin emitter for easy drive
Low stray inductance
3
2
1
-
M5 power connectors
4
5
Benefits
•
•
•
•
•
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive TC of VCEsat
7
6
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VCES
Collector - Emitter Breakdown Voltage
1700
45
30
70
±20
210
V
TC = 25°C
TC = 80°C
TC = 25°C
IC
Continuous Collector Current
A
ICM
VGE
PD
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
V
W
TC = 25°C
Tj = 125°C
RBSOA Reverse Bias Safe Operation Area
70A@1700V
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
1 - 3
APT website – http://www.advancedpower.com
APTGT30A170D1
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
1700
BVCES Collector - Emitter Breakdown Voltage
VGE = 0V, IC = 1.5mA
VGE = 0V, VCE = 1700V
V
mA
ICES
Zero Gate Voltage Collector Current
3
Tj = 25°C
Tj = 125°C
VGE = VCE , IC = 1.5mA
VGE = 20V, VCE = 0V
2.0
2.4
5.8
2.4
VGE = 15V
IC = 30A
VCE(on) Collector Emitter on Voltage
VGE(th) Gate Threshold Voltage
V
5.2
6.4
600
V
nA
IGES
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol Characteristic
Test Conditions
VGE = 0V, VCE = 25V
f = 1MHz
Min Typ Max Unit
Cies
Cres
Td(on)
Tr
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
2500
90
pF
Inductive Switching (25°C)
200
100
V
V
GE = ±15V
Bus = 900V
ns
Td(off) Turn-off Delay Time
750
IC = 30A
RG = 18Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 30A
Tf
Td(on)
Tr
Fall Time
90
Turn-on Delay Time
Rise Time
230
100
ns
Td(off) Turn-off Delay Time
850
Tf
Fall Time
115
RG = 18Ω
Eoff
Turn Off Energy
22
mJ
Reverse diode ratings and characteristics
Symbol Characteristic
Test Conditions
Min Typ Max Unit
IF = 50A
VGE = 0V
Tj = 25°C
Tj = 125°C
1.8
1.9
2.2
VF
Er
Diode Forward Voltage
Reverse Recovery Energy
V
IF = 50A
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
8
VR = 900V
di/dt =990A/µs
IF = 50A
VR = 900V
di/dt =990A/µs
mJ
15
18
29
Qrr
Reverse Recovery Charge
µC
Thermal and package characteristics
Symbol Characteristic
Min Typ Max Unit
IGBT
Diode
0.6
0.9
°C/W
RthJC
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
VISOL
3500
V
TJ
TSTG
TC
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
-40
-40
-40
2
150
125
125
3.5
5
°C
For terminals
To Heatsink
M5
M6
Torque Mounting torque
Wt Package Weight
N.m
g
3
180
2 - 3
APT website – http://www.advancedpower.com
APTGT30A170D1
Package outline
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
3 - 3
APT website – http://www.advancedpower.com
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