TC1266VUA [MICROCHIP]
200mA PCI LDO; 200毫安PCI LDO
| 型号： | TC1266VUA |
| 厂家： | 
MICROCHIP |
| 描述： | 200mA PCI LDO |
| 文件： | 总16页 (文件大小：516K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC1266
200mA PCI LDO
Features
General Description
• Glitch Free Transition Between Input Sources
• Automatic Input Source Selection
• External PMOS Bypass Switch Control
• Built-in 5V Detector
The TC1266 is an application-specific, low dropout
regulator (LDO), specifically intended for use in PCI
peripheral card applications complying with PCI Power
Management (PCI 2.0). It provides an uninterrupted,
3.3V, 200mA (max) output voltage when the main (5V)
or auxiliary (3.3V) input voltage supplies are present.
• 1% Regulated Output Voltage Accuracy
• 200mA Load Current Capability
• Kelvin Sense Input
The TC1266 consists of an LDO, a voltage threshold
detector, external switchover logic and gate drive
circuitry. It functions as a conventional LDO as long as
• Low Dropout Voltage (240mV @ Full Load)
• Low Ground Current, Independent of Load
the voltage on the main supply input (V ) is above the
IN
lower threshold (3.90V typical). Should the voltage on
V
fall below the lower threshold, the LDO is disabled
Applications
IN
and an external P-channel MOSFET is automatically
turned on, connecting the auxiliary supply input to
• PCMCIA
• PCI
V
and ensuring an uninterrupted 3.3V output. The
OUT,
• Network Interface Cards (NICs)
• CardbusTM Technology
main supply is automatically selected, if both the main
and auxiliary input supplies are present, and transition
from one input supply to the other is ensured glitch-
free. High integration, automatic secondary supply
switchover, Kelvin sensing, and small size make the
TC1266 the optimum LDO for PCI 2.0 applications.
Device Selection Table
Junction
Temp. Range
Part Number
Package
Functional Block Diagram
TC1266VOA 8-Pin SOIC (Narrow) -5°C to +125°C
TC1266VUA
8-Pin MSOP
-5°C to +125°C
V
IN
D
V
Package Type
Detect
R
AUX
8-Pin SOIC
Bandgap
Reference
1
2
3
4
8
7
6
5
V
D
V
IN
R
–
NC
E/A
OUT
V
+
OUT
TC1266
SENSE
V
GND
SENSE
AUX
NC
GND
TC1266
V
D
V
IN
8
7
6
5
1
2
3
4
R
NC
OUT
SENSE
NC
V
AUX
GND
2002 Microchip Technology Inc.
DS21377B-page 1
TC1266
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Supply Voltage (V )..............-0.5V to +7V (Max)
IN
Auxiliary Supply Voltage (V
) .....-0.5V to +7V (Max)
AUX
LDO Output Current (I
Thermal Impedance,
)................................200mA
OUT
Junction-to-Ambient (θ )............130°C/W for SOIC
JA
ESD Rating .......................................................... 2 KV
Operating Temperature Range (T )........-5°C to +70°C
A
Storage Temperature Range (T
)...-65°C to +150°C
STG
TC1266 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: TA = +25°C, VIN = 5V, VAUX = 3.3V, IOUT = 0.1mA, COUT = 4.7µF, unless otherwise noted. Boldface
type specifications apply over full operating temperature range.
Symbol
VIN
Parameter
Supply Voltage
Min
4.3
Typ
5.0
Max
5.5
Units
Test Conditions
V
VAUX = 0V
VAUX = 0V (Note 6)
AUX = 3.3V (Note 6)
IGND
Ground Current
—
—
230
260
450
500
µA
V
IVIN
Reverse Leakage from VAUX
Supply Voltage
—
-0.1
-1.0
3.6
µA
V
VAUX = 3.6V, VIN = 0V, IOUT = 0mA
VAUX
IQ(AUX)
3.0
3.3
Quiescent Current
—
—
50
—
70
100
µA
VIN = 0V, IOUT = 0mA
VIN = 5V, IOUT= 0mA
—
—
60
—
80
120
µA
IVAUX
Reverse Leakage from VIN
—
-0.1
-1.0
µA
VIN = 5,5V, VAUX = 0V, IOUT = 0mA
VTH(LO)
5V Detector
Low Threshold Voltage
—
3.75
3.90
—
—
4.05
V
VIN Falling (Notes 2, 3)
VHYST
VTH(HI)
VOUT
5V Detector
Hysteresis Voltage
—
200
260
—
—
300
mV
V
(Notes 2, 3)
5V Detector
High Threshold Voltage
—
4.0
4.15
—
—
4.30
VIN Rising (Notes 2, 3)
LDO Output Voltage
—
3.300
—
—
3.366
—
V
IOUT = 20mA
3.234
3.000
4.3V ≤ VIN ≤ 5.5V, 0mA ≤ IOUT ≤ 200mA
3.75V ≤ VIN ≤ 4.3V,
—
0mA ≤ IOUT ≤ 200mA (Note 4)
IOUT
Output Current
Line Regulation
200
—
—
mA
%
REG(LINE)
—
-0.5
0.05
—
—
0.5
VIN = 4.3V to 5.5V
REG(LOAD)
Load Regulation
—
-0.5
0.05
—
—
0.5
%
IOUT= 0.1mA to 200mA
Note 1: Ensured by design.
2: See 5V Detect Thresholds, Figure 4-1.
3: Recommended source impedance for 5V supply: ≤ 0.25Ω. This will ensure that IOUT x RSOURCE < VHYST, thus avoiding DR toggling during
5V detect threshold transitions.
4: In Application Circuit, Figure 3-1.
5: See Timing Diagram, Figure 4-2.
6: Ground Current is independent of ILOAD
.
DS21377B-page 2
2002 Microchip Technology Inc.
TC1266
TC1266 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: TA = +25°C, VIN = 5V, VAUX = 3.3V, IOUT = 0.1mA, COUT = 4.7µF, unless otherwise noted. Boldface
type specifications apply over full operating temperature range.
Symbol
VDR
Parameter
Drive Voltage
Min
Typ
Max
Units
Test Conditions
VIN - 0.2
IN - 0.3
VIN - 0.1
—
—
—
V
4.3V ≤ VIN ≤ 5.5V, IDR = 200µA
V
—
—
35
—
150
200
mV
mA
VIN < VTH(LO), IDR = 200µA
IDR(PK)
tDH
Peak Drive Current
7
6
—
—
—
—
Sinking: VIN = 3.75V, VDR = 1V;
Sourcing: VIN = 4.3V, VIN – VDR = 2V
Drive High Delay
(Notes 1, 5)
—
—
4
—
—
8
µsec
µsec
CDR = 1.2nF, VIN ramping up,
measured from VIN = VTH(HI) to VDR = 2V
tDL
Drive Low Delay
(Notes 1, 5)
—
—
0.6
—
1.5
3.0
CDR = 1.2nF, VIN ramping down,
measured from VIN = VTH(LO) to VDR = 2V
Note 1: Ensured by design.
2: See 5V Detect Thresholds, Figure 4-1.
3: Recommended source impedance for 5V supply: ≤ 0.25Ω. This will ensure that IOUT x RSOURCE < VHYST, thus avoiding DR toggling during
5V detect threshold transitions.
4: In Application Circuit, Figure 3-1.
5: See Timing Diagram, Figure 4-2.
6: Ground Current is independent of ILOAD
.
2002 Microchip Technology Inc.
DS21377B-page 3
TC1266
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
Pin No.
(8-Pin SOIC)
(8-Pin MSOP)
Symbol
Description
1
2
3
4
5
6
7
8
VIN
NC
Main input supply for the TC1266, nominally 5V.
Not connected.
VAUX
GND
NC
Auxiliary input supply, nominally 3.3V.
Logic and power ground.
Not connected.
SENSE
VOUT
DR
Sense pin for VOUT. Connect to VOUT at the load to minimize voltage drop across PCB traces.
LDO 3.3V output.
Driver output for external P-channel MOSFET pass element.
3.0
DETAILED DESCRIPTION
FIGURE 3-1:
APPLICATION CIRCUIT
Q1
U1
1
8
D
V
5V
R
IN
2
7
6
NC
V
OUT
3.3V
TC1266
3
4
V
SENSE
AUX
3.3V
C4
4.7µF
C5
0.1µF
C2
4.7µF
C3
5
GND
NC
0.1µF
C1
0.1µF
NOTE: External switch (Q1): use Motorola MGSF1P02ELT1 or equivalent
(PMOS, typical Gate Threshold Voltage = 1V, typical R
= 0.4Ω at VGS = 2.5V)
DS(ON)
DS21377B-page 4
2002 Microchip Technology Inc.
TC1266
Equation 4-1 can be used in conjunction with
Equation 4-2 to ensure regulator thermal operation is
within limits. For example:
4.0
4.1
THERMAL CONSIDERATIONS
Thermal Shutdown
Given:
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.
V
= 5V ± 5%
= 3.217V
INMAX
V
OUTMIN
I
= 200mA
LOADMAX
T
JMAX
= 125°C
4.2
Power Dissipation
T
= 70°C
AMAX
JA
The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst case actual power dissipation:
θ
= 130°C/W (SOIC)
Find: 1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
EQUATION 4-1:
P
≈ (VINMAX – VOUTMIN)I
LOADMAX
D
P
≈ (VINMAX – VOUTMIN)I
LOADMAX
D
= (5.25V - 3.217V) 200mA
= 407mW
Where:
P
= Worst case actual power dissipation
D
Maximum allowable power dissipation:
= Maximum voltage on V
V
IN
INMAX
P
DMAX = (TJMAX – T
)
V
= Minimum regulator output voltage
= Maximum output (load) current
AMAX
OUTMIN
I
θ
LOADMAX
JA
= (125 – 70)
130
The
maximum
allowable
power
dissipation
(Equation 4-2) is a function of the maximum ambient
temperature (TAMAX), the maximum allowable die
temperature (TJMAX) and the thermal resistance from
= 423mW
In this example, the TC1266 dissipates a maximum of
407mW; below the allowable limit of 423mW.
junction-to-air (θ ).
JA
EQUATION 4-2:
P
DMAX = (TJMAX – T
)
AMAX
θ
JA
Where all terms are previously defined.
2002 Microchip Technology Inc.
DS21377B-page 5
TC1266
FIGURE 4-1:
5V DETECT THRESHOLD
4.4V
V
HYST
V
TH(HI)
V
IN
V
TH(LO)
3.65V
2.0V
2.0V
D
R
NOTE: V rise and fall times (10% to 90%) to be ≥ 100µsec.
IN
FIGURE 4-2:
TIMING DIAGRAM
4.4V
V
IN
3.65V
t
DH
t
DL
D
R
2.0V
2.0V
NOTE: V rise and fall times (10% to 90%) to be ≤ 0.1µsec.
IN
DS21377B-page 6
2002 Microchip Technology Inc.
TC1266
5.0
TYPICAL CHARACTERISTICS
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
I
vs. V vs. Junction Temperature
IN
I
Q
vs. V vs. Junction Temperature
IN
Q
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.45
0.40
0.35
0.30
0.25
0.20
0.15
+125°C
I
V
= 0.1mA
O
I
V
= 0.1mA
= 3.3V
O
AUX
= 0V
AUX
+125°C
+25°C
-5°C
0.10
0.05
0.00
-5°C
0.10
0.05
+25°C
0.00
3
4
5
0
1
2
6
0
1
2
3
4
5
6
V
(V)
IN
V
(V)
IN
I
(Aux) vs. V
vs. Junction Temperature
Q
AUX
I
(Aux) vs. V
vs. Junction Temperature
Q
AUX
0.35
0.30
0.25
0.35
0.30
0.25
I
V
= 0mA
O
I
V
= 0mA
O
= 0V
AUX
= 5V
AUX
-5°C
0.20
+125°C
0.20
-5°C
+125°C
0.15
0.10
0.05
0.00
0.15
0.10
0.05
0.00
+25°C
+25°C
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
(V)
3
3.3 3.6
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
(V)
3
3.3 3.6
V
AUX
V
AUX
LDO Output Voltage vs. Junction Temperature
3.34
I
V
= 200mA
O
3.33
= 5V
IN
3.32
3.31
3.30
3.29
3.28
3.27
3.26
-50
-25
0
25
50
75
100
125
JUNCTION TEMPERATURE °C
2002 Microchip Technology Inc.
DS21377B-page 7
TC1266
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
Drive High Delay
Drive Low Delay
V
steps from 0.8V to 5V
IN
See application circuit on Page 5
= 200mA
I
LOAD
Trace 1: VIN stepping for 0.8V to 5V
Trace 1: VIN stepping for 5.5V to 0V
Trace 2: DR
TDH = < 4 S
TH(HI)
R
TDL = < 600nS
V
O
(min) with V Rising
IN
V
O
(min) with V Falling
IN
Notice no voltage spikes during transition
from V to LDO output
AUX
V
voltage difference is I
x R
and variations
supply and LDO output voltage
OUT
between V
OUT
DS(ON)
V
voltage difference is I
OUT
x R + voltage
DS(ON)
OUT
difference from LDO to V
AUX
supply
AUX
Trace 1: VIN – 3A charging a 1500µF capacitor
Trace 2: DR going high at VTH(HI)
Trace 3: VOUT, offset 3.3V. VOUT(min) = 3.24V
Trace 1: VIN – discharging a 1500µF capacitor
Trace 2: DR going low at VTH(LO)
Trace 3: VOUT, offset 3.3V. VOUT(min) = 3.14V
ILOAD = 200µA
ILOAD = 200µA
DS21377B-page 8
2002 Microchip Technology Inc.
TC1266
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
Load Response Rising Edge
Load Response Falling Edge
I = 200mA
LOAD
I
= 200mA
LOAD
I
= 3mA
LOAD
I
= 3mA
LOAD
V
AC 60mV/div
OUT
See application circuit on Page5
See application circuit on Page 5
2002 Microchip Technology Inc.
DS21377B-page 9
TC1266
6.0
6.1
PACKAGING INFORMATION
Package Marking Information
Package marking data not available at this time.
6.2
Taping Form
Component Taping Orientation for 8-Pin MSOP Devices
User Direction of Feed
PIN 1
W
P
Standard Reel Component Orientation
for TR Suffix Device
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
8-Pin MSOP
12 mm
8 mm
2500
13 in
Component Taping Orientation for 8-Pin SOIC (Narrow) Devices
User Direction of Feed
PIN 1
W
P
Standard Reel Component Orientation
for TR Suffix Device
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
8-Pin SOIC (N)
12 mm
8 mm
2500
13 in
DS21377B-page 10
2002 Microchip Technology Inc.
TC1266
6.3
Package Dimensions
8-Pin MSOP
PIN 1
.197 (5.00)
.189 (4.80)
.122 (3.10)
.114 (2.90)
.026 (0.65) TYP.
.122 (3.10)
.114 (2.90)
.043 (1.10)
MAX.
.008 (0.20)
.005 (0.13)
6° MAX.
.016 (0.40)
.010 (0.25)
.006 (0.15)
.002 (0.05)
.028 (0.70)
.016 (0.40)
Dimensions: inches (mm)
8-Pin SOIC
PIN 1
.157 (3.99)
.150 (3.81)
.244 (6.20)
.228 (5.79)
.050 (1.27) TYP.
.197 (5.00)
.189 (4.80)
.069 (1.75)
.053 (1.35)
.010 (0.25)
.007 (0.18)
8MAX.
.020 (0.51)
.013 (0.33)
.010 (0.25)
.004 (0.10)
.050 (1.27)
.016 (0.40)
Dimensions: inches (mm)
2002 Microchip Technology Inc.
DS21377B-page 11
TC1266
NOTES:
DS21377B-page 12
2002 Microchip Technology Inc.
TC1266
SALES AND SUPPORT
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002 Microchip Technology Inc.
DS21377B-page 13
TC1266
NOTES:
DS21377B-page 14
2002 Microchip Technology Inc.
TC1266
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical com-
ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con-
veyed, implicitly or otherwise, under any intellectual property
rights.
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© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
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2002 Microchip Technology Inc.
DS21377B-page 15
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Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
China - Shenzhen
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: 86-755-2350361 Fax: 86-755-2366086
New York
150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: 631-273-5305 Fax: 631-273-5335
San Jose
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Toronto
China - Hong Kong SAR
Italy
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
India
Tel: 39-039-65791-1 Fax: 39-039-6899883
Microchip Technology Inc.
India Liaison Office
United Kingdom
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
05/01/02
DS21377B-page 16
2002 Microchip Technology Inc.
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