TC1267VET [MICROCHIP]
400mA PCI LDO; 400毫安PCI LDO
| 型号： | TC1267VET |
| 厂家： | 
MICROCHIP |
| 描述： | 400mA PCI LDO |
| 文件： | 总14页 (文件大小：491K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TC1267
400mA PCI LDO
Features
General Description
• Glitch Free Transition Between Input Sources
• Automatic Input Source Selection
• External PMOS Bypass Switch Control
• Built-in 5V Detector
The TC1267 is an application-specific, low dropout
regulator (LDO), specifically intended for use in PCI
peripheral card applications complying with PCI Power
Management (PCI 2.0). It provides an uninterrupted,
3.3V output voltage when the main (5V) or auxiliary
(3.3V) input voltage supplies are present.
• 1% Regulated Output Voltage Accuracy
• 400mA Load Current Capability
• Kelvin Sense Input
The TC1267 consists of an LDO, a voltage threshold
detector, external switchover logic and gate drive
circuitry. It functions as a conventional LDO as long as
• Low Ground Current, Independent of Load
the voltage on the main supply input (V ) is above the
lower threshold (3.90V typical). Should the voltage on
IN
Applications
V
fall below the lower threshold, the LDO is disabled
IN
• PCMCIA
and an external P-channel MOSFET is automatically
turned on, connecting the auxiliary supply input to
• PCI
• Network Interface Cards (NICs)
• CardbusTM Technology
• Desktop Computers
V
and ensuring an uninterrupted 3.3V output. The
OUT,
main supply is automatically selected, if both the main
and auxiliary input supplies are present, and transition
from one input supply to the other is ensured glitch-
free. High integration, automatic secondary supply
switchover, Kelvin sensing, and small size make the
TC1267 the optimum LDO for PCI 2.0 applications.
Device Selection Table
Junction
Temp. Range
Part Number
Package
Functional Block Diagram
TC1267VET
5-Pin DDPAK
-5°C to +95°C
Pin Configuration
5-Pin DDPAK
V
IN
D
V
Detect
R
AUX
Tab is GND
Bandgap
Reference
TC1267
–
E/A
+
V
OUT
GND
1
2 3 4
5
2002 Microchip Technology Inc.
DS21378B-page 1
TC1267
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Supply Voltage (V )..............-0.5V to +7V (Max)
IN
Auxiliary Supply Voltage (V
) .....-0.5V to +7V (Max)
AUX
LDO Output Current (I
Thermal Impedance,
)................................400mA
OUT
Junction-to-Ambient (θ ).......... 27°C/W for DDPAK
JA
ESD Rating .......................................................... 2 KV
Operating Temperature Range (T )........-5°C to +70°C
A
Storage Temperature Range (T
)...-65°C to +150°C
STG
TC1267 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: TA = +25°C, VIN = 5V, VAUX = 3.3V, IOUT = 0.1mA, COUT = 4.7µF, unless otherwise noted. Boldface
type specifications apply over full operating range.
Symbol
VIN
IGND
Parameter
Supply Voltage
Min
4.4
Typ
5.0
Max
5.5
Units
Test Conditions
V
VAUX = 0V
VAUX = 0V (Note 6)
AUX = 3.3V (Note 6)
Ground Current
—
—
230
260
450
500
µA
V
IVIN
Reverse Leakage from
VAUX
—
-0.1
-1.0
µA
VAUX = 3.5V, VIN = 0V, IOUT = 0mA
VAUX
Supply Voltage
3.0
3.3
3.6
V
IQ(AUX)
Quiescent Current
—
—
50
—
70
100
µA
VIN = 0V, IOUT = 0mA
VIN = 5V, IOUT = 0mA
—
—
60
—
80
120
µA
IVAUX
Reverse Leakage from VIN
—
-0.1
-1.0
µA
VIN = 5.5V, VAUX = 0V, IOUT = 0mA
VTH(LO)
5V Detector
Low Threshold Voltage
—
3.75
3.90
—
—
4.05
V
VIN Falling (Notes 2, 3)
VHYST
VTH(HI)
VOUT
5V Detector
Hysteresis Voltage
—
200
260
—
—
300
mV
V
(Notes 2, 3)
5V Detector
High Threshold Voltage
—
4.0
4.15
—
—
4.30
VIN Rising (Notes 2, 3)
LDO Output Voltage
—
3.300
—
—
3.366
—
V
V
IOUT = 20mA
3.201
3.000
400
4.4V ≤ VIN ≤ 5.5V, 0mA ≤ IOUT ≤ 400mA
0mA ≤ IOUT ≤ 400mA (Note 4)
—
V
IOUT
Output Current
Line Regulation
—
—
mA
%
REG(LINE)
—
-0.5
0.05
—
—
+0.5
VIN = 4.3V to 5.5V
REG(LOAD) Load Regulation
VDR Drive Voltage
—
-1.5
-0.1
—
—
+0.5
%
V
IOUT = 0.1mA to 400mA
4.3V ≤ VIN ≤ 5.5V, IDR = 200µA
VIN < VTH(LO), IDR = 200µA
VIN - 0.2
IN - 0.3
VIN - 0.1
—
—
—
V
—
—
35
—
150
200
mV
Note 1: Ensured by design.
2: See 5V Detect Thresholds, Figure 4-1.
3: Recommended source impedance for 5V supply: ≤ 0.25Ω. This will ensure that IOUT x RSOURCE < VHYST, thus avoiding DR toggling during
5V detect threshold transitions.
4: In Application Circuit, Figure 3-1.
5: See Timing Diagram, Figure 4-2.
6: Ground Current is independent of ILOAD
.
DS21378B-page 2
2002 Microchip Technology Inc.
TC1267
TC1267 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: TA = +25°C, VIN = 5V, VAUX = 3.3V, IOUT = 0.1mA, COUT = 4.7µF, unless otherwise noted. Boldface
type specifications apply over full operating range.
Symbol
IDR(PK)
Parameter
Min
Typ
Max
Units
Test Conditions
Peak Drive Current
7
6
—
—
—
—
mA
Sinking: VIN = 3.75V, VDR = 1V;
Sourcing: VIN = 4.3V, VIN – VOR = 2V
tDH
tDL
Drive High Delay
(Notes 1, 5)
—
—
4
—
—
8
µsec
µsec
CDR = 1.2nF, VIN ramping up,
measured from VIN = VTH(HI) to VDR = 2V
Drive Low Delay
(Notes 1, 5)
—
—
0.6
—
1.5
3.0
CDR = 1.2nF, VIN ramping down,
measured from VIN = VTH(LO) to VDR = 2V
Note 1: Ensured by design.
2: See 5V Detect Thresholds, Figure 4-1.
3: Recommended source impedance for 5V supply: ≤ 0.25Ω. This will ensure that IOUT x RSOURCE < VHYST, thus avoiding DR toggling during
5V detect threshold transitions.
4: In Application Circuit, Figure 3-1.
5: See Timing Diagram, Figure 4-2.
6: Ground Current is independent of ILOAD
.
2002 Microchip Technology Inc.
DS21378B-page 3
TC1267
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
Pin No.
Symbol
Description
1
2
3
4
5
VAUX
VIN
Auxiliary input supply, nominally 3.3V.
Main input supply for the TC1267, nominally 5V.
GND
VOUT
DR
Logic and power ground.
LDO 3.3V output.
Driver output for external P-channel MOSFET pass element.
3.0
DETAILED DESCRIPTION
FIGURE 3-1:
APPLICATION CIRCUIT
Q1
TAB IS GND
TC1267
3.3V
5V
3.3V
C1
4.7µF
C2
0.1µF
C3
0.1µF
C4
4.7µF
C5
0.1µF
NOTE: External switch (Q1): use Motorola MGSF1P02ELT1 or equivalent
(PMOS, typical Gate Threshold Voltage = 1V, typical RDS(ON) = 0.4Ω at VGS = 2.5V)
DS21378B-page 4
2002 Microchip Technology Inc.
TC1267
Equation 4-1 can be used in conjunction with
Equation 4-2 to ensure regulator thermal operation is
within limits. For example:
4.0
4.1
THERMAL CONSIDERATIONS
Thermal Shutdown
Given:
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.
V
= 5V ± 5%
= 3.217V
= 400mA
= 95°C
INMAX
V
OUTMIN
I
LOADMAX
T
JMAX
4.2
Power Dissipation
T
= 70°C
AMAX
JA
The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst case actual power dissipation:
θ
= 27°C/W (DDPAK mounted on
1000 sq mm topside copper area)
Find: 1. Actual power dissipation
2. Maximum allowable dissipation
EQUATION 4-1:
Actual power dissipation:
P
≈ (VINMAX – VOUTMIN)I
LOADMAX
P
≈ (VINMAX – VOUTMIN)I
LOADMAX
D
D
Where:
= (5.25V - 3.217V) 400mA
= 813mW
P
= Worst case actual power dissipation
D
= Maximum voltage on V
= Minimum regulator output voltage
= Maximum output (load) current
V
IN
INMAX
Maximum allowable power dissipation:
V
OUTMIN
P
DMAX = (TJMAX – T
)
AMAX
I
LOADMAX
θ
JA
The
maximum
allowable
power
dissipation
= (95 – 70)
27
(Equation 4-2) is a function of the maximum ambient
temperature (TAMAX), the maximum allowable die
temperature (TJMAX) and the thermal resistance from
= 423mW
In this example, the TC1267 dissipates a maximum of
813mW; below the allowable limit of 926mW.
junction-to-air (θ ).
JA
EQUATION 4-2:
PDMAX = (TJMAX – T
)
AMAX
θ
JA
Where all terms are previously defined.
Table 4-1 shows various values of θ for the TC1267
JA
packages.
TABLE 4-1:
THERMAL RESISTANCE
GUIDELINES FOR TC1267 IN
5-PIN DDPAK
Copper
Area
(Topside)*
Copper
Area
(Backside)
Thermal
Resistance
Board
Area
(θ
)
JA
2500 sq mm 2500 sq mm 2500 sq mm
1000 sq mm 2500 sq mm 2500 sq mm
125 sq mm 2500 sq mm 2500 sq mm
25°C/W
27°C/W
35°C/W
*Tab of device attached to topside copper.
2002 Microchip Technology Inc.
DS21378B-page 5
TC1267
FIGURE 4-1:
5V DETECT THRESHOLD
4.4V
V
HYST
V
TH(HI)
V
IN
V
TH(LO)
3.65V
2.0V
2.0V
D
R
NOTE: V rise and fall times (10% to 90%) to be ≥ 100µsec.
IN
FIGURE 4-2:
TIMING DIAGRAM
4.4V
V
IN
3.65V
t
DH
t
DL
D
R
2.0V
2.0V
NOTE: V rise and fall times (10% to 90%) to be ≤ 0.1µsec.
IN
DS21378B-page 6
2002 Microchip Technology Inc.
TC1267
5.0
TYPICAL CHARACTERISTICS
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
I
vs. V vs. Junction Temperature
IN
I
Q
vs. V vs. Junction Temperature
IN
Q
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.45
0.40
0.35
0.30
0.25
0.20
0.15
+125°C
I
V
= 0.1mA
O
I
V
= 0.1mA
= 3.3V
O
AUX
= 0V
AUX
+125°C
+25°C
-5°C
0.10
0.05
0.00
-5°C
0.10
0.05
+25°C
0.00
3
4
5
0
1
2
6
0
1
2
3
4
5
6
V
(V)
IN
V
(V)
IN
I
0.35
0.30
0.25
(Aux) vs. V
vs. Junction Temperature
Q
AUX
I
(Aux) vs. V
vs. Junction Temperature
Q
AUX
0.35
0.30
0.25
I
= 0mA
O
I
= 0mA
O
V
= 0V
AUX
V
= 5V
AUX
-5°C
0.20
+125°C
0.20
-5°C
+125°C
0.15
0.10
0.05
0.00
0.15
0.10
0.05
0.00
+25°C
+25°C
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
(V)
3
3.3 3.6
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
(V)
3
3.3 3.6
V
AUX
V
AUX
LDO Output Voltage vs. Junction Temperature
3.34
I
V
= 200mA
O
3.33
= 5V
IN
3.32
3.31
3.30
3.29
3.28
3.27
3.26
-50
-25
0
25
50
75
100
125
JUNCTION TEMPERATURE °C
2002 Microchip Technology Inc.
DS21378B-page 7
TC1267
5.0
TYPICAL CHARACTERISTICS (CONTINUED)
Drive High Delay
Drive Low Delay
V
steps from 0.8V to 5V
IN
See application circuit on Page 5
= 200mA
I
LOAD
Trace 1: VIN stepping for 0.8V to 5V
Trace 1: VIN stepping for 5.5V to 0V
Trace 2: DR
TDH = < 4 S
TH(HI)
R
TDL = < 600nS
V
O
(min) with V Rising
IN
V
O
(min) with V Falling
IN
Notice no voltage spikes during transition
from V to LDO output
AUX
V
voltage difference is I
x R
and variations
supply and LDO output voltage
OUT
between V
OUT
DS(ON)
V
voltage difference is I
OUT
x R + voltage
DS(ON)
OUT
difference from LDO to V
AUX
supply
AUX
Trace 1: VIN – 3A charging a 1500µF capacitor
Trace 2: DR going high at VTH(HI)
Trace 3: VOUT, offset 3.3V. VOUT(min) = 3.24V
Trace 1: VIN – discharging a 1500µF capacitor
Trace 2: DR going low at VTH(LO)
Trace 3: VOUT, offset 3.3V. VOUT(min) = 3.14V
ILOAD = 200µA
ILOAD = 200µA
DS21378B-page 8
2002 Microchip Technology Inc.
TC1267
6.0
6.1
PACKAGING INFORMATION
Package Marking Information
Package marking data not available at this time.
6.2
Taping Form
Component Taping Orientation for 5-Pin DDPAK Devices
PIN 1
User Direction of Feed
M a r k i n g
D e v i c e
W
P
Standard Reel Component Orientation
for TR Suffix Device
(Mark Right Side Up)
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
5-Pin DDPAK
24 mm
16 mm
750
13 in
6.3
Package Dimensions
5-Pin DDPAK
.410 (10.41)
.385 (9.78)
.183 (4.65)
.170 (4.32)
.067 (1.70)
.045 (1.14)
.055 (1.40)
.045 (1.14)
3° - 7°
(5x)
.370 (9.40)
.330 (8.38)
.010 (0.25)
.000 (0.00)
.605 (15.37)
.549 (13.95)
.026 (0.66)
.014 (0.36)
.110 (2.79)
.068 (1.72)
.037 (0.94)
.026 (0.66)
PIN 1
.067 (1.70) TYP.
8° MAX.
Dimensions: inches (mm)
2002 Microchip Technology Inc.
DS21378B-page 9
TC1267
NOTES:
DS21378B-page 10
2002 Microchip Technology Inc.
TC1267
SALES AND SUPPORT
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002 Microchip Technology Inc.
DS21378B-page 11
TC1267
NOTES:
DS21378B-page 12
2002 Microchip Technology Inc.
TC1267
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical com-
ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con-
veyed, implicitly or otherwise, under any intellectual property
rights.
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© 2002, Microchip Technology Incorporated, Printed in the
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2002 Microchip Technology Inc.
DS21378B-page 13
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Tel: 905-673-0699 Fax: 905-673-6509
India
Tel: 39-039-65791-1 Fax: 39-039-6899883
Microchip Technology Inc.
India Liaison Office
United Kingdom
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
05/01/02
DS21378B-page 14
2002 Microchip Technology Inc.
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