TC1268-2.5VOA [MICROCHIP]
500mA Fixed Output, Fast Response CMOS LDO with Shutdown; 500毫安固定输出,响应速度快的CMOS LDO ,带有关断型号: | TC1268-2.5VOA |
厂家: | MICROCHIP |
描述: | 500mA Fixed Output, Fast Response CMOS LDO with Shutdown |
文件: | 总12页 (文件大小:449K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TC1268
500mA Fixed Output, Fast Response CMOS LDO with Shutdown
Features
General Description
• Very Low Dropout Voltage
The TC1268 is a fixed output, fast turn-on, high
accuracy (typically ±0.5%) CMOS low dropout
regulator. Designed specifically for battery-operated
systems, the TC1268’s CMOS construction eliminates
wasted ground current, significantly extending battery
life. Total supply current is typically 80µA at full load (20
to 60 times lower than in bipolar regulators).
• 500mA Output Current
• High Output Voltage Accuracy
• Standard or Custom Output Voltages
• Over Current and Over Temperature Protection
• SHDN Input for Active Power Management
• ERROR Output to Detect Low Battery
• 5µsec (typical) Wake-up Time from SHDN
TC1268’s key features include ultra low noise, very low
dropout voltage (typically 350mV at full load), and
fast response to step changes in load. The TC1268
also has a fast wake-up response time (5µsec typically)
when released from shutdown. The TC1268
incorporates both over temperature and over current
protection. The TC1268 is stable with an output
capacitor of only 1µF and has a maximum output
current of 500mA.
Applications
• RAMBUS Memory Module
• Battery-Operated Systems
• Portable Computers
• Medical Instruments
• Instrumentation
Typical Application
• Cellular/GSM/PHS Phones
• Linear Post-Regulator for SMPS
• Pagers
V
V
V
V
OUT
IN
IN
OUT
+
C
1µF
OUT
• Digital Cameras
Device Selection Table
GND
SHDN
SHDN
Output*
Junction
Temp. Range
Part Number Voltage Package
(V)
TC1268-2.5VOA
2.5
8-Pin SOIC -40°C to +125°C
*Other output voltages and package options are available.
Please contact Microchip Technology Inc. for details.
Package Type
V
V
IN
1
2
3
4
8
7
6
5
OUT
GND
NC
NC
SHDN
BYPASS
ERROR
2002 Microchip Technology Inc.
DS21379B-page 1
TC1268
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage .........................................................6.5V
Power Dissipation................Internally Limited (Note 6)
Maximum Voltage on Any Pin ........V +0.3V to -0.3V
IN
Operating Temperature ............... -40°C < T < +125°C
J
Storage Temperature..........................-65°C to +150°C
TC1268 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: VIN = VOUT + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
VIN
IOUTMAX
VOUT
Parameter
Min
Typ
Max
Units
Test Conditions
Note 8
Input Operating Voltage
Maximum Output Current
Output Voltage
2.7
—
—
6.0
V
mA
V
500
—
—
VR ±0.5%
—
—
Note 1
VR – 2.5%
VR + 2.5%
∆VOUT/∆T
VOUT Temperature Coefficient
—
—
—
40
—
ppm/°C Note 2
∆VOUT/∆VIN Line Regulation
∆VOUT/VOUT Load Regulation
0.05
0.002
0.35
0.01
%
(VR + 1V) ≤ VIN ≤ 6V
%/mA IL = 0.1mA to IOUTMAX (Note 3)
VIN-VOUT
Dropout Voltage
—
—
—
—
20
60
200
350
30
mV
I
I
I
I
L = 100µA
160
480
800
L = 100mA
L = 300mA
L = 500mA (Note 4)
IDD
Supply Current (Active Mode)
Supply Current (Shutdown Mode)
Wake-up Time
—
—
—
80
5
130
—
µA
µA
SHDN = VIH, IL = 0
SHDN = 0V
ISHDN
TWK
5
10
µsec
VIN = 3.5V, VOUT = 2.5V
C
IN = COUT = 1µF
L = 250mA (See Figure 3-2)
VIN = 3.5V, VOUT = 2.5V
IN = COUT = 1µF
L = 250mA (See Figure 3-2)
(from Shutdown Mode)
Settling Time
I
TS
—
15
—
µsec
C
I
(from Shutdown Mode)
Power Supply Rejection Ratio
Output Short Circuit Current
Thermal Regulation
PSRR
IOUTSC
∆VOUT/∆PD
eN
—
—
—
—
64
—
1400
—
dB
mA
V/W
FRE ≤ 1kHz
VOUT = 0V
Note 5
1200
0.04
260
Output Noise
—
nV/√Hz IL = IOUTMAX
SHDN Input
VIH
SHDN Input High Threshold
SHDN Input Low Threshold
45
—
—
—
%VIN
%VIN
VIL
—
15
Note 1: VR is the regulator output voltage setting.
TC VOUT = (VOUTMAX – VOUTMIN) x 106
2:
VOUT x ∆T
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from
0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation
specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V
differential.
5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
7: Hysteresis voltage is referenced to VR.
8: The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1mA to IOUTMAX
.
DS21379B-page 2
2002 Microchip Technology Inc.
TC1268
TC1268 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: VIN = VOUT + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH, TA = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
ERROR Output
VMIN
VOL
VTH
Minimum Operating Voltage
Output Logic Low Voltage
ERROR Threshold Voltage
1.0
—
—
—
—
400
—
V
mV
V
1 mA Flows to ERROR
—
0.95 x VR
Note 1: VR is the regulator output voltage setting.
TC VOUT = (VOUTMAX – VOUTMIN) x 106
2:
VOUT x ∆T
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from
0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation
specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value measured at a 1V
differential.
5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 msec.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
7: Hysteresis voltage is referenced to VR.
8: The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1mA to IOUTMAX
.
2002 Microchip Technology Inc.
DS21379B-page 3
TC1268
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
PIN FUNCTION TABLE
Pin No.
(8-Pin SOIC)
Symbol
Description
1
2
3
4
5
VOUT
GND
Regulated voltage output.
Ground terminal.
No connect.
NC
BYPASS
ERROR
Reference bypass input. Connecting a 470pF to this input further reduces output noise.
Out-of-Regulation Flag. (Open drain output). This output goes low when VOUT is out-of-tolerance
by approximately -5%.
6
SHDN
Shutdown control input. The regulator is fully enabled when a logic high is applied to this input.
The regulator enters shutdown when a logic low is applied to this input. During shutdown, output
voltage falls to zero and supply current is reduced to 5µA (typical).
7
8
NC
VIN
No connect.
Unregulated supply input.
The total turn on response is defined as the Settling
3.0
DETAILED DESCRIPTION
Time (T ), see Figure 3-2. Settling Time (inclusive with
S
The TC1268 is a precision, fixed output LDO. Unlike
bipolar regulators, the TC1268 supply current does
not increase with load current. In addition, V
remains stable and within regulation over the entire
0mA to ILOADMAX load current range, (an important
consideration in RTC and CMOS RAM battery back-up
applications). Figure 3-1 shows a typical application
circuit.
T
) is defined as the condition when the output is
WK
within 2% of its fully enabled value (15µsec typical)
when released from shutdown. The settling time of the
output voltage is dependent on load conditions and
OUT
output capacitance on V
(RC response).
OUT
The Wake-up Time (T ) is an important parameter
WK
to consider when using the TC1268 in RAMBUS
applications. In this application, the bus voltage is held
at 2.5V by a switching regulator during normal power
conditions and can be switched to low power mode,
where the TC1268 takes over and supplies the same
2.5V, but at a much lower current (300mA). In order to
not see the bus voltage drop during the transition from
high power to low power, the TC1268 has a very fast
wake-up time of 5µsec to support the 2.5V rail. This
makes the TC1268 ideal for applications involving
RAMBUS.
FIGURE 3-1:
TYPICAL APPLICATION
CIRCUIT
V
V
V
OUT
OUT
IN
+
+
C
IN
1µF
C
1µF
OUT
+
TC1268
Battery
ON
OFF
V+
SHDN
–
SHDN
R1
1M
BYP
GND ERROR
C
BYP
10nF
FIGURE 3-2:
WAKE-UP RESPONSE
TIME
+
0.2µF
C1
C1 required only if ERROR is used
as a processor RESET signal (See Text)
V
IH
V
T
IL
S
SHDN
3.1
Turn On Response
98%
The turn on response is defined as two separate
response categories, Wake-up Time (T ) and Settling
2%
V
OUT
WK
T
WK
Time (T ).
S
The TC1268 has a fast Wake-up Time (5µsec typical)
when released from shutdown. See Figure 3-2 for the
Wake-up Time designated as T . The Wake-up Time
WK
is defined as the time it takes for the output to rise to 2%
of the V
value after being released from shutdown.
OUT
DS21379B-page 4
2002 Microchip Technology Inc.
TC1268
3.2
Bypass Input
3.4
ERROR Output
A 10nF capacitor connected from the bypass input to
ground reduces noise present on the internal
reference, which in turn, significantly reduces output
noise. If output noise is not a concern, this input may be
left unconnected. Larger capacitor values may be
used, but this results in a longer time period to achieve
the rated output voltage, once power is initially applied.
ERROR is driven low whenever V
falls out of
OUT
regulation by more than -5% (typical). This condition
may be caused by low input voltage, output current
limiting, or thermal limiting.
The ERROR threshold is 5% below rated V
,
OUT
regardless of the programmed output voltage value
(e.g., ERROR = V at 2.375V (typ.) for a 2.5V
OL
regulator). ERROR output operation is shown in
3.3
Output Capacitor
Figure 3-3. Note that ERROR is active when V
is at
OUT
or below V , and inactive when V
is above V
+
A 1µF (min) capacitor from V
to ground is required.
TH
OUT
TH
OUT
V .
The output capacitor should have an effective series
resistance greater than 0.1Ω and less than 5Ω, and a
resonant frequency above 1MHz. A 1µF capacitor
H
As shown in Figure 3-1, ERROR can be used as a
battery low flag, or as a processor RESET signal (with
the addition of timing capacitor C1). R1 x C1 should be
should be connected from V to GND if there is more
IN
than 10 inches of wire between the regulator and the
AC filter capacitor, or if a battery is used as the power
source. Aluminum electrolytic or tantalum capacitor
types can be used. (Since many aluminum electrolytic
capacitors freeze at approximately -30°C, solid
tantalums are recommended for applications operating
below -25°C.) When operating from sources other than
batteries, supply noise rejection and transient
response can be improved by increasing the value of
the input and output capacitors and employing passive
filtering techniques.
chosen to maintain ERROR below V of the processor
RESET input for at least 200msec to allow time for the
system to stabilize. Pull-up resistor R1 can be tied to
IH
V
, V or any other voltage less than (V + 0.3V).
OUT IN
IN
FIGURE 3-3:
ERROR OUTPUT
OPERATION
V
OUT
Hysteresis (V
)
H
V
TH
ERROR
V
IH
V
OL
2002 Microchip Technology Inc.
DS21379B-page 5
TC1268
Equation 4-1 can be used in conjunction with
Equation 4-2 to ensure regulator thermal operation is
within limits. For example:
4.0
4.1
THERMAL CONSIDERATIONS
Thermal Shutdown
Given:
Integrated thermal protection circuitry shuts the
regulator off when die temperature exceeds 160°C.
The regulator remains off until the die temperature
drops to approximately 150°C.
V
= 3.3V ± 10%
= 2.5V ± 0.5%
= 275mA
INMAX
V
OUTMIN
I
LOADMAX
T
JMAX
= 125°C
4.2
Power Dissipation
T
= 95°C
AMAX
JA
The amount of power the regulator dissipates is
primarily a function of input and output voltage, and
output current. The following equation is used to
calculate worst case actual power dissipation:
θ
= 60°C/W
Find: 1. Actual power dissipation
2. Maximum allowable dissipation
Actual power dissipation:
EQUATION 4-1:
P
≈ (VINMAX – VOUTMIN)I
LOADMAX
D
P
≈ (VINMAX – VOUTMIN)I
LOADMAX
D
-3
= [(3.3 x 1.1) – (2.5 x .995)]275 x 10
= 314mW
Where:
P
= Worst case actual power dissipation
D
Maximum allowable power dissipation:
DMAX = (TJMAX – T
= Maximum voltage on V
V
V
IN
INMAX
P
)
= Minimum regulator output voltage
= Maximum output (load) current
AMAX
OUTMIN
I
θ
JA
LOADMAX
= (125 – 95)
60
The
maximum
allowable
power
dissipation
(Equation 4-2) is a function of the maximum ambient
temperature (TAMAX), the maximum allowable die
temperature (TJMAX) and the thermal resistance from
= 500mW
In this example, the TC1268 dissipates a maximum of
314mW; below the allowable limit of 500mW. In a
similar manner, Equation 4-1 and Equation 4-2 can be
used to calculate maximum current and/or input
voltage limits. For example, the maximum allowable
is found by substituting the maximum allowable
power dissipation of 500mW into Equation 4-1, from
which VINMAX = 3.94V.
junction-to-air (θ ).
JA
EQUATION 4-2:
P
DMAX = (TJMAX – T
)
AMAX
V
IN
θ
JA
Where all terms are previously defined.
Table 4-1 shows various values of θ for the TC1268
JA
package.
TABLE 4-1:
THERMAL RESISTANCE
GUIDELINES FOR TC1268 IN
8-PIN SOIC PACKAGE
Copper
Area
(Topside)*
Copper
Area
(Backside)
Thermal
Resistance
Board
Area
(θ
)
JA
2500 sq mm 2500 sq mm 2500 sq mm
1000 sq mm 2500 sq mm 2500 sq mm
225 sq mm 2500 sq mm 2500 sq mm
100 sq mm 2500 sq mm 2500 sq mm
60°C/W
60°C/W
68°C/W
74°C/W
*Pin 2 is ground. Device is mounted on topside.
DS21379B-page 6
2002 Microchip Technology Inc.
TC1268
5.0
TYPICAL CHARACTERISTICS
Note: The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Fast Response TC1268
Fast Response TC1268
Conditions:
V
V
C
R
= 2.50V
SHDN
OUT
IN
IN
SHDN
Conditions:
VOUT = 2.50V
= 3.50V
= C
= 1µF
OUT
= 10Ω
V
IN = 3.50V
LOAD
CIN = COUT = 1µF
LOAD = 10Ω
R
V
OUT
V
OUT
100µsec/DIV; 15µsec Rise Time
10µsec/DIV; 15µsec Rise Time
2002 Microchip Technology Inc.
DS21379B-page 7
TC1268
6.0
6.1
PACKAGING INFORMATION
Package Marking Information
Package marking data not available at this time.
6.2
Taping Form
Component Taping Orientation for 8-Pin SOIC (Narrow) Devices
User Direction of Feed
PIN 1
W
P
Standard Reel Component Orientation
for TR Suffix Device
Carrier Tape, Number of Components Per Reel and Reel Size
Package
Carrier Width (W)
Pitch (P)
Part Per Full Reel
Reel Size
8-Pin SOIC (N)
12 mm
8 mm
2500
13 in
6.3
Package Dimensions
PIN 1
.157 (3.99)
.150 (3.81)
.244 (6.20)
.228 (5.79)
.050 (1.27) TYP.
.197 (5.00)
.189 (4.80)
.069 (1.75)
.053 (1.35)
.010 (0.25)
.007 (0.18)
8MAX.
.020 (0.51)
.013 (0.33)
.010 (0.25)
.004 (0.10)
.050 (1.27)
.016 (0.40)
Dimensions: inches (mm)
DS21379B-page 8
2002 Microchip Technology Inc.
TC1268
SALES AND SUPPORT
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recom-
mended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1. Your local Microchip sales office
2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
3. The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
2002 Microchip Technology Inc.
DS21379B-page 9
TC1268
NOTES:
DS21379B-page 10
2002 Microchip Technology Inc.
TC1268
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical com-
ponents in life support systems is not authorized except with
express written approval by Microchip. No licenses are con-
veyed, implicitly or otherwise, under any intellectual property
rights.
Trademarks
The Microchip name and logo, the Microchip logo, FilterLab,
KEELOQ, microID, MPLAB, PIC, PICmicro, PICMASTER,
PICSTART, PRO MATE, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip Tech-
nology Incorporated in the U.S.A. and other countries.
dsPIC, ECONOMONITOR, FanSense, FlexROM, fuzzyLAB,
In-Circuit Serial Programming, ICSP, ICEPIC, microPort,
Migratable Memory, MPASM, MPLIB, MPLINK, MPSIM,
MXDEV, MXLAB, PICC, PICDEM, PICDEM.net, rfPIC, Select
Mode and Total Endurance are trademarks of Microchip
Technology Incorporated in the U.S.A.
Serialized Quick Turn Programming (SQTP) is a service mark
of Microchip Technology Incorporated in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2002, Microchip Technology Incorporated, Printed in the
U.S.A., All Rights Reserved.
Printed on recycled paper.
Microchip received QS-9000 quality system
certification for its worldwide headquarters,
design and wafer fabrication facilities in
Chandler and Tempe, Arizona in July 1999
and Mountain View, California in March 2002.
The Company’s quality system processes and
procedures are QS-9000 compliant for its
PICmicro® 8-bit MCUs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals,
non-volatile memory and analog products. In
addition, Microchip’s quality system for the
design and manufacture of development
systems is ISO 9001 certified.
2002 Microchip Technology Inc.
DS21379B-page 11
WORLDWIDE SALES AND SERVICE
Japan
AMERICAS
ASIA/PACIFIC
Microchip Technology Japan K.K.
Benex S-1 6F
3-18-20, Shinyokohama
Kohoku-Ku, Yokohama-shi
Kanagawa, 222-0033, Japan
Tel: 81-45-471- 6166 Fax: 81-45-471-6122
Corporate Office
Australia
2355 West Chandler Blvd.
Microchip Technology Australia Pty Ltd
Suite 22, 41 Rawson Street
Epping 2121, NSW
Chandler, AZ 85224-6199
Tel: 480-792-7200 Fax: 480-792-7277
Technical Support: 480-792-7627
Web Address: http://www.microchip.com
Australia
Tel: 61-2-9868-6733 Fax: 61-2-9868-6755
Korea
Rocky Mountain
China - Beijing
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
2355 West Chandler Blvd.
Chandler, AZ 85224-6199
Tel: 480-792-7966 Fax: 480-792-7456
Microchip Technology Consulting (Shanghai)
Co., Ltd., Beijing Liaison Office
Unit 915
Bei Hai Wan Tai Bldg.
Atlanta
500 Sugar Mill Road, Suite 200B
Atlanta, GA 30350
Tel: 770-640-0034 Fax: 770-640-0307
Boston
2 Lan Drive, Suite 120
Westford, MA 01886
Tel: 978-692-3848 Fax: 978-692-3821
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
No. 6 Chaoyangmen Beidajie
Beijing, 100027, No. China
Tel: 86-10-85282100 Fax: 86-10-85282104
China - Chengdu
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Singapore, 188980
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Microchip Technology Taiwan
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
Chicago
333 Pierce Road, Suite 180
Itasca, IL 60143
Chengdu 610016, China
Tel: 86-28-86766200 Fax: 86-28-86766599
Tel: 630-285-0071 Fax: 630-285-0075
China - Fuzhou
Dallas
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
4570 Westgrove Drive, Suite 160
Addison, TX 75001
EUROPE
Denmark
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
Tel: 972-818-7423 Fax: 972-818-2924
Detroit
Tri-Atria Office Building
32255 Northwestern Highway, Suite 190
Farmington Hills, MI 48334
Tel: 248-538-2250 Fax: 248-538-2260
Tel: 86-591-7503506 Fax: 86-591-7503521
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
Kokomo
France
2767 S. Albright Road
Kokomo, Indiana 46902
Tel: 765-864-8360 Fax: 765-864-8387
Los Angeles
Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
China - Shenzhen
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: 86-755-2350361 Fax: 86-755-2366086
New York
150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: 631-273-5305 Fax: 631-273-5335
San Jose
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Toronto
China - Hong Kong SAR
Italy
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
India
Tel: 39-039-65791-1 Fax: 39-039-6899883
Microchip Technology Inc.
India Liaison Office
United Kingdom
Microchip Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
05/01/02
DS21379B-page 12
2002 Microchip Technology Inc.
相关型号:
©2020 ICPDF网 联系我们和版权申明