SWD-119TR [TE]
Single/Quad Drivers for GaAs FET Switches and Attenuators; 砷化镓FET开关和衰减器单/ Quad驱动程序型号: | SWD-119TR |
厂家: | TE CONNECTIVITY |
描述: | Single/Quad Drivers for GaAs FET Switches and Attenuators |
文件: | 总5页 (文件大小:320K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Single/Quad Drivers for GaAs FET
Switches and Attenuators
V 4.00
Features
SO-8 (SWD-109)
n
n
n
n
n
n
High Speed CMOS Technology
Single Channel (SWD-109)
Quad Channel (SWD-119)
Positive Voltage Control
Low Power Dissipation
Low Cost Plastic SOIC Package
Description
The SWD-109 is a single channel driver used to translate
TTL control inputs into gate control voltages for GaAs FET
microwave switches and attenuators. High speed analog
CMOS technology is utilized to achieve low power
dissipation at moderate to high speeds, encompassing most
microwave switching applications. The output HIGH level
is optionally 0 to +2.0V (relative to GND) to optimize the
intermodulation products of the control devices at low
frequencies.
The SWD-119 is a quad channel driver with performance
similar to the single channel version.
Absolute Maximum Ratings
SO-16 (SWD-119)
Symbol
Parameter
Min
Max
Unit
VCC
Positive DC
-0.5
5.5
V
Supply Voltage
VEE
Negative DC
Supply Voltage
-9.0
-0.5
0.5
2.0
V
V
VOPT
Optional DC
Output Supply
Voltage
VOPT-VEE
Output to
Negative Supply
Voltage Range
-0.5
-0.5
-0.5
9.0
14.5
V
V
V
VCC-VEE Positive to Nega-
tive Supply
Voltage Range
VI
DC Input
Voltage
VCC +0.5
II
DC Input Current
-25
25
mA
V
VO
DC Output
Voltage
VEE –0.5
VOPT +0.5
VO
DC Output
Current
-25
-65
25
mA
°C
TSTG
Storage
150
Temperature
All voltages are referenced to GND. All inputs and outputs
incorporate latch-up protection structures.
Single/Quad Drivers for GaAs FET Switches and Attenuators
Guaranteed Operating Ranges
SWD-109/119
V 4.00
Symbol
VCC
Parameter 1
Unit
V
Min.
4.5
-8.5
0
Typ.
5.0
-5.0
1.0
6.5
10.0
+25
—
Max.
5.5
Positive DC Supply Voltage
Negative DC Supply Voltage
Optional DC Output Supply Voltage
Negative Supply Voltage Range
Positive to negative Supply Range
Operating Ambient temperature
DC Output Current - High
VEE
V
-4.5
2.0
2
VOPT
V
VOPT-VEE
VCC-VEE
TA
V
4.5
9.0
-40
—
8.5
V
14.0
+85
-1.0
1.0
°C
mA
mA
ns
IOH
IOL
DC Output Current - Low
—
—
Trise, Tfall
Maximum Input Rise or Fall Time
—
—
500
1. All voltages are relative to GND.
2. VOPT is grounded for most applications. To improve the intermodulation performance and the 1 dB compression point of GaAs
control devices at low frequencies, VOPT can be increased to between 1.0 and 2.0V. The nonlinear characteristics of the GaAs
control devices will approximate performance at 500 MHz. It should be noted that the control current is on the GaAs MMICs will
increase when positive controls are applied.
DC Characteristics over Guaranteed Operating Range
Symbol
VIH
Parameter
Input High Voltage
Test Conditions
Units
V
Min.
2.0
Typ.
—
Max.
—
Guaranteed High Input Voltage
Guaranteed Low Input Voltage
VIL
Input Low Voltage
V
—
—
0.8
VIH
Output High Voltage
Output Low Voltage
Input Leakage Current
Quiescent Supply Current
IOH = -1 mA
IOL = 1 mA
VEE = Max
VEE = Max
VEE = Min
V
VOPT -0.1
—
—
—
VOL
IIN
V
—
VEE +0.1
1.0
VIN = VCC or GND
µA
µA
-1.0
—
0
ICC
VCC = Max
VOPT = Min or
Max
VEE = Min
VIN = VCC or GND
—
100
Additional Supply Current,
per TTL Input pin
VCC= Max
VIN = VCC -2.1V
mA
—
—
1.0
D ICC
Switching Waveforms
2
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Single/Quad Drivers for GaAs FET Switches and Attenuators
SWD-109/119
V 4.00
Truth Table for Single Driver
Functional Schematic (SWD-109)
(SWD-109)
Input
C1
Outputs
B
A
Logic “0”
Logic “1”
VEE
VOPT
VOPT
VEE
Pin Configuration
Pin No.
Function
Output A
GND
Pin No.
Function
Vee
1
2
3
4
5
6
7
8
Vopt
Vcc
GND
C1, Logic
Output B
AC Characteristics Over Guaranteed Operating Range 3 (SWD-109)
Symbol
Parameter
VOPT- VEE
-55 to +25°C
<+85°C
<+125°C
Unit
TPLH
Propagation Delay
4.5
6.5
8.5
45
44
43
55
54
52
61
59
57
ns
TPHL
TTLH
TTHL
Tskew
Propagation Delay
4.5
6.5
8.5
45
43
41
55
52
49
61
57
53
ns
ns
ns
ns
Output Rising Transition Time
Output Rising Transition Time
Delay Skew, Output A to Output B
4.5
6.5
8.5
10.0
9.0
8.0
10.0
9.0
8.0
11.0
9.0
8.0
4.5
6.5
8.5
10.0
9.0
8.0
10.0
9.0
8.0
11.0
9.0
8.0
4.5
6.5
8.5
8.0
8.0
7.5
8.5
8.5
8.0
10.0
10.0
9.5
CIN
Input Capacitance
—
—
—
10
10
10
10
10
10
pF
pF
pF
CPDC
CPDE
Power Dissipation Capacitance 4
Power Dissipation Capacitance 4
140
140
140
3. VCC = 4.5V, VEE = -4.5V, VOPT = 0V, CL = 25 pF, Trise, Tfall = 6ns. These conditions represent the worst case for slow delays.
4. Total Power Dissipation is calculated by the following formula: PD = VCC 2fC PDC + (VOPT-VEE) 2fCPDE
3
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Single/Quad Drivers for GaAs FET Switches and Attenuators
SWD-109/119
V 4.00
Functional Schematic (SWD-119)
Truth Table for Quad Driver
(SWD-119)
Input
CX
Outputs
A
B
Logic “0”
Logic “1”
VEE
VOPT
VOPT
VEE
Pin Configuration
Pin No.
Function
Vee
Vcc
Pin No.
Function
Output A1
Output B1
Output A2
Output B2
Output A3
Output B3
Output A4
Output B4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
C4
C3
C2
C1
Vopt
GND
AC Characteristics Over Guaranteed Operating Range 3 (SWD-119)
Symbol
Parameter
VOPT- VEE
-55 to +25°C
<+85°C
<+125°C
Unit
TPLH
Propagation Delay
4.5
6.5
8.5
45
44
43
55
54
52
61
59
57
ns
TPHL
TTLH
TTHL
Tskew
Propagation Delay
4.5
6.5
8.5
45
43
41
55
52
49
61
57
53
ns
ns
ns
ns
Output Rising Transition Time
Output Rising Transition Time
Delay Skew, Output A to Output B
4.5
6.5
8.5
10.5
10.0
9.0
11.0
10.0
9.0
12.0
10.0
9.0
4.5
6.5
8.5
10.0
9.0
8.0
10.0
9.0
8.0
11.0
9.0
8.0
4.5
6.5
8.5
8.0
8.0
7.5
8.5
8.5
8.0
10.0
10.0
9.5
CIN
Input Capacitance
—
—
—
10
10
10
10
10
10
pF
pF
pF
CPDC
CPDE
Power Dissipation Capacitance 4
Power Dissipation Capacitance 4
140
140
140
3. VCC = 4.5V, VEE = -4.5V, VOPT = 0V, CL = 25 pF, Trise, Tfall = 6ns. These conditions represent the worst case for slow delays.
4. Total Power Dissipation is calculated by the following formula: PD = VCC 2fC PDC + (VOPT-VEE) 2fCPDE
4
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
Single/Quad Drivers for GaAs FET Switches and Attenuators
Ordering Information
SWD-109/119
V 4.00
Part Number
Package
Part Number
Package
SWD-109 PIN
SOIC 8 Lead
SWD-119 PIN
SOIC 16 Lead
SWD-109TR
Forward Tape and Reel
Reverse Tape and Reel
SWD-119TR
Forward Tape and Reel
Reverse Tape and Reel
SWD-109RTR
SWD-119RTR
5
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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