MRF16030 [TE]
RF POWER TRANSISTOR NPN SILICON; RF功率晶体管NPN硅型号: | MRF16030 |
厂家: | TE CONNECTIVITY |
描述: | RF POWER TRANSISTOR NPN SILICON |
文件: | 总5页 (文件大小:134K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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SEMICONDUCTOR TECHNICAL DATA
by MRF16030/D
The RF Line
RF Power Transistor
Designed for 28 Volt microwave large–signal, common base, Class–C CW
amplifier applications in the range 1600 – 1640 MHz.
30 WATTS, 1.6 GHz
RF POWER TRANSISTOR
NPN SILICON
•
Specified 28 Volt, 1.6 GHz Class–C Characteristics
Output Power = 30 Watts
Minimum Gain = 7.5 dB, @ 30 Watts
Minimum Efficiency = 40% @ 30 Watts
•
Characterized with Series Equivalent Large–Signal Parameters from
1500 MHz to 1700 MHz
•
•
Silicon Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
CASE 395C–01, STYLE 2
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Collector–Emitter Voltage
Emitter–Base Voltage
Symbol
Value
60
Unit
Vdc
Vdc
Adc
V
V
CES
4.0
EBO
Collector–Current
I
C
4.0
Total Device Dissipation @ T = 25°C
P
D
103
0.58
Watts
°C/W
C
Derate above 25°C
Storage Temperature Range
T
–65 to +150
1.7
°C
stg
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case (1) (2)
R
°C/W
θJC
(1) Thermal measurement performed using CW RF operating condition.
(2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 3
1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Collector–Emitter Breakdown Voltage
V
Vdc
Vdc
(BR)CES
(BR)CBO
(BR)EBO
(I = 100 mAdc, V
= 0)
55
—
—
—
—
—
—
—
10
C
BE
Collector–Base Breakdown Voltage
(I = 100 mAdc, I = 0)
V
V
55
C
E
Emitter–Base Breakdown Voltage
(I = 10 mAdc, I = 0)
4.0
Vdc
E
C
Collector Cutoff Current
(V = 28 Vdc, V
I
mAdc
CES
= 0)
BE
—
CE
ON CHARACTERISTICS
DC Current Gain
h
FE
—
(I
CE
= 1.0 Adc, V
CE
= 5.0 Vdc)
20
35
80
FUNCTIONAL TESTS
Collector–Base Amplifier Power Gain
G
dB
%
pe
(V
CC
= 28 Vdc, P
= 30 Watts, f = 1600/1640 MHz)
= 30 Watts, f = 1600/1640 MHz)
= 30 Watts, f = 1600/1640 MHz)
= 30 Watts, f = 1600 MHz, Load
7.5
40
7.7
45
—
—
—
—
out
out
out
Collector Efficiency
(V = 28 Vdc, P
η
CC
Input Return Loss
(V = 28 Vdc, P
I
dB
RL
8.0
CC
Output Mismatch Stress
= 28 Vdc, P
Ψ
V
CC
No Degradation in Output Power
out
VSWR = 3:1, All phase angles at frequency of test
REV 3
2
L3
B1
28 Vdc
R1
C1
C2
C3
C4
L2
L1
C5
Board Material – Teflon Glass Laminate Dielectric
Thickness = 0.30
″,
ε
= 2.55
″, 2.0 oz. Copper
r
B1
Fair Rite Bead on #24 Wire
C4
47 µF, 50 V, Electrolytic
C1, C5
C2
C3
100 pF, B Case, ATC Chip Cap
0.1 µF, Dipped Mica Cap
0.1 µF, Chip Cap
L1, L2
L3
R1
3 Turns, #18, 0.133″ ID, 0.15″ Long
9 Turns, #24 Enamel
82 Ω, 1.0 W, Carbon
Figure 1. MRF16030 Test Fixture Schematic
f = 1.5 GHz
1.6 GHz
Z
in
1.6 GHz
1.7 GHz
1.7 GHz
f = 1.5 GHz
Z
*
OL
Z
= 10 Ω
o
V
= 28 Vdc, P
= 30 W
out
CC
f
Z
Z
*
in
OL
Ohms
MHz
Ohms
Z
* = Conjugate of the optimum load impedance into which the device
OL
1500
1600
1700
3.05 + j 4.88
2.66 + j 2.53
1.79 + j 2.80
1.51 + j 2.64
output operates at a given output power, voltage and frequency.
4.32 + j 6.00
5.62 + j 5.79
Figure 2. Series Equivalent Input/Output Impedance
REV 3
3
45
40
35
30
f = 1.6 GHz
1.64 GHz
25
20
15
V
= 28 Vdc
8.5
CC
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
9.0
P
, INPUT POWER (WATTS)
in
Figure 3. Output Power versus Input Power
REV 3
4
PACKAGE DIMENSIONS
–A–
U
Q 2 PL
1
M
M
M
0.51 (0.020)
T
A
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
INCHES
MIN
MILLIMETERS
–B–
DIM
A
B
C
D
E
H
J
K
MAX
0.750
0.260
0.198
0.225
0.070
0.091
0.006
0.240
0.330
0.135
MIN
18.77
6.10
4.19
5.46
1.40
2.01
0.10
5.33
8.00
3.18
MAX
19.05
6.60
5.03
5.72
1.78
2.31
0.15
6.10
8.38
3.42
0.739
0.240
0.165
0.215
0.055
0.079
0.004
0.210
0.315
0.125
3
K
2
N
Q
U
D
N
0.560 BSC
14.23 BSC
STYLE 2:
E
PIN 1. EMITTER
2. COLLECTOR
3. BASE
J
C
H
SEATING
PLANE
–T–
CASE 395C–01
ISSUE A
Specifications subject to change without notice.
n North America: Tel. (800) 366-2266, Fax (800) 618-8883
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
Visit www.macom.com for additional data sheets and product information.
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