MRF16030 [TE]

RF POWER TRANSISTOR NPN SILICON; RF功率晶体管NPN硅
MRF16030
型号: MRF16030
厂家: TE CONNECTIVITY    TE CONNECTIVITY
描述:

RF POWER TRANSISTOR NPN SILICON
RF功率晶体管NPN硅

晶体 晶体管
文件: 总5页 (文件大小:134K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
Order this document  
SEMICONDUCTOR TECHNICAL DATA  
by MRF16030/D  
The RF Line  
RF Power Transistor  
Designed for 28 Volt microwave large–signal, common base, Class–C CW  
amplifier applications in the range 1600 – 1640 MHz.  
30 WATTS, 1.6 GHz  
RF POWER TRANSISTOR  
NPN SILICON  
Specified 28 Volt, 1.6 GHz Class–C Characteristics  
Output Power = 30 Watts  
Minimum Gain = 7.5 dB, @ 30 Watts  
Minimum Efficiency = 40% @ 30 Watts  
Characterized with Series Equivalent Large–Signal Parameters from  
1500 MHz to 1700 MHz  
Silicon Nitride Passivated  
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal  
Migration  
CASE 395C–01, STYLE 2  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Collector–Emitter Voltage  
Emitter–Base Voltage  
Symbol  
Value  
60  
Unit  
Vdc  
Vdc  
Adc  
V
V
CES  
4.0  
EBO  
Collector–Current  
I
C
4.0  
Total Device Dissipation @ T = 25°C  
P
D
103  
0.58  
Watts  
°C/W  
C
Derate above 25°C  
Storage Temperature Range  
T
65 to +150  
1.7  
°C  
stg  
THERMAL CHARACTERISTICS  
Thermal Resistance — Junction to Case (1) (2)  
R
°C/W  
θJC  
(1) Thermal measurement performed using CW RF operating condition.  
(2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques.  
REV 3  
1
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
C
Characteristic  
OFF CHARACTERISTICS  
Symbol  
Min  
Typ  
Max  
Unit  
Collector–Emitter Breakdown Voltage  
V
Vdc  
Vdc  
(BR)CES  
(BR)CBO  
(BR)EBO  
(I = 100 mAdc, V  
= 0)  
55  
10  
C
BE  
Collector–Base Breakdown Voltage  
(I = 100 mAdc, I = 0)  
V
V
55  
C
E
Emitter–Base Breakdown Voltage  
(I = 10 mAdc, I = 0)  
4.0  
Vdc  
E
C
Collector Cutoff Current  
(V = 28 Vdc, V  
I
mAdc  
CES  
= 0)  
BE  
CE  
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I  
CE  
= 1.0 Adc, V  
CE  
= 5.0 Vdc)  
20  
35  
80  
FUNCTIONAL TESTS  
Collector–Base Amplifier Power Gain  
G
dB  
%
pe  
(V  
CC  
= 28 Vdc, P  
= 30 Watts, f = 1600/1640 MHz)  
= 30 Watts, f = 1600/1640 MHz)  
= 30 Watts, f = 1600/1640 MHz)  
= 30 Watts, f = 1600 MHz, Load  
7.5  
40  
7.7  
45  
out  
out  
out  
Collector Efficiency  
(V = 28 Vdc, P  
η
CC  
Input Return Loss  
(V = 28 Vdc, P  
I
dB  
RL  
8.0  
CC  
Output Mismatch Stress  
= 28 Vdc, P  
Ψ
V
CC  
No Degradation in Output Power  
out  
VSWR = 3:1, All phase angles at frequency of test  
REV 3  
2
L3  
B1  
28 Vdc  
R1  
C1  
C2  
C3  
C4  
L2  
L1  
C5  
Board Material – Teflon Glass Laminate Dielectric  
Thickness = 0.30  
,  
ε
= 2.55  
, 2.0 oz. Copper  
r
B1  
Fair Rite Bead on #24 Wire  
C4  
47 µF, 50 V, Electrolytic  
C1, C5  
C2  
C3  
100 pF, B Case, ATC Chip Cap  
0.1 µF, Dipped Mica Cap  
0.1 µF, Chip Cap  
L1, L2  
L3  
R1  
3 Turns, #18, 0.133ID, 0.15Long  
9 Turns, #24 Enamel  
82 , 1.0 W, Carbon  
Figure 1. MRF16030 Test Fixture Schematic  
f = 1.5 GHz  
1.6 GHz  
Z
in  
1.6 GHz  
1.7 GHz  
1.7 GHz  
f = 1.5 GHz  
Z
*
OL  
Z
= 10 Ω  
o
V
= 28 Vdc, P  
= 30 W  
out  
CC  
f
Z
Z
*
in  
OL  
Ohms  
MHz  
Ohms  
Z
* = Conjugate of the optimum load impedance into which the device  
OL  
1500  
1600  
1700  
3.05 + j 4.88  
2.66 + j 2.53  
1.79 + j 2.80  
1.51 + j 2.64  
output operates at a given output power, voltage and frequency.  
4.32 + j 6.00  
5.62 + j 5.79  
Figure 2. Series Equivalent Input/Output Impedance  
REV 3  
3
45  
40  
35  
30  
f = 1.6 GHz  
1.64 GHz  
25  
20  
15  
V
= 28 Vdc  
8.5  
CC  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
9.0  
P
, INPUT POWER (WATTS)  
in  
Figure 3. Output Power versus Input Power  
REV 3  
4
PACKAGE DIMENSIONS  
–A–  
U
Q 2 PL  
1
M
M
M
0.51 (0.020)  
T
A
B
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
INCHES  
MIN  
MILLIMETERS  
–B–  
DIM  
A
B
C
D
E
H
J
K
MAX  
0.750  
0.260  
0.198  
0.225  
0.070  
0.091  
0.006  
0.240  
0.330  
0.135  
MIN  
18.77  
6.10  
4.19  
5.46  
1.40  
2.01  
0.10  
5.33  
8.00  
3.18  
MAX  
19.05  
6.60  
5.03  
5.72  
1.78  
2.31  
0.15  
6.10  
8.38  
3.42  
0.739  
0.240  
0.165  
0.215  
0.055  
0.079  
0.004  
0.210  
0.315  
0.125  
3
K
2
N
Q
U
D
N
0.560 BSC  
14.23 BSC  
STYLE 2:  
E
PIN 1. EMITTER  
2. COLLECTOR  
3. BASE  
J
C
H
SEATING  
PLANE  
–T–  
CASE 395C–01  
ISSUE A  
Specifications subject to change without notice.  
n North America: Tel. (800) 366-2266, Fax (800) 618-8883  
n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298  
n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020  
Visit www.macom.com for additional data sheets and product information.  
REV 3  
5

相关型号:

MRF160AMMO

Electric Fuse, Fast Blow, 0.16A, 35A (IR), MICRO,
BEL

MRF161

SILICON N-CHANNEL RF POWER MOSFET
ASI

MRF162

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
MOTOROLA

MRF163

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
MOTOROLA

MRF164W

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
MOTOROLA

MRF166

MOSFET BROADBAND RF POWER FETs
MOTOROLA

MRF166C

MOSFET BROADBAND RF POWER FETs
MOTOROLA

MRF166C

MOSFET BROADBAND RF POWER FETs
TE

MRF166W

TMOS BROADBAND RF POWER FET
MOTOROLA

MRF166W

TMOS BROADBAND RF POWER FET
TE

MRF171

N-Channel Enhancement Mode TMOS RF FET
ASI

MRF171A

MOSFET BROADBAND RF POWER FET
TE