KDV241E [KEC]
SILICON EPITAXIAL PLANAR DIODE; 硅外延平面二极管
| 型号： | KDV241E |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | SILICON EPITAXIAL PLANAR DIODE |
| 文件： | 总2页 (文件大小：38K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KDV241E
SEMICONDUCTOR
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
ANTENNA TUNNING APPLICATION
FEATURES
C
E
Low Tuning Voltage : VT=3V.
1
High Capacitance Ratio : C0.5V/C3V=3.5(Min.)
Excellent C-V Characteristics, and Small Tracking Error.
2
D
F
DIM MILLIMETERS
_
A
B
C
D
E
F
1.60+0.10
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
_
1.20+0.10
_
0.80+0.10
SYMBOL
RATING
10
UNIT
V
_
0.30+0.05
_
+
0.60 0.10
VR
Tj
Reverse Voltage
_
1. ANODE
2. CATHODE
+
0.13 0.05
Junction Temperature
125
Tstg
Storage Temperature Range
-55 125
ESC
Marking
Type Name
TM
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Reverse Current
SYMBOL
IR
TEST CONDITION
MIN.
-
TYP.
MAX.
10
UNIT
nA
VR=25V
-
-
-
-
-
-
C0.5V
C1.5V
C3V
VR=0.5V, f=1MHz
VR=1.5V, f=1MHz
VR=3V, f=1MHz
-
7.2
3.3
1.8
3.5
-
8.9
4.2
2
Capacitance
pF
-
C0.5V/C3V
rS
Capacitance Ratio
Series Resistance
-
VR=0.5V, f=470MHz
1.3
2007. 6. 11
Revision No : 0
1/2
KDV241E
IR - Tj
CT - VR
10 2
14
12
10
8
f=1MHz
Ta=25 C
6
4
2
10
0
0
20
40
60
80
100
0
1
10
JUNCTION TEMPERATURE T ( C)
j
REVERSE VOLTAGE V (V)
R
2007. 6. 11
Revision No : 0
2/2
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