KDV245E [KEC]
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO); 变容二极管硅外延平面二极管（ VCO用于UHF波段收音机）
| 型号： | KDV245E |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO) |
| 文件： | 总2页 (文件大小：386K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KDV245E
SEMICONDUCTOR
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
VCO FOR UHF Band Radio.
FEATURES
C
E
1
High Capacitance Ratio : C0.5V/C2.5V =2.5(Typ.)
Low Series Resistance : rs=0.35 (Typ.)
Useful for Small Size Tuner.
2
D
F
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
DIM MILLIMETERS
_
A
B
C
D
E
F
1.60+0.10
SYMBOL
RATING
10
UNIT
V
_
1.20+0.10
_
0.80+0.10
VR
Tj
Reverse Voltage
_
+
0.30 0.05
_
+
0.60 0.10
Junction Temperature
150
1. ANODE
_
+
0.13 0.05
2. CATHODE
Tstg
Storage Temperature Range
-55 150
ESC
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Reverse Voltage
SYMBOL
VR
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
IR=1 A
VR=10V
10
-
-
-
3
IR
C0.5V
C2.5V
K
Reverse Current
-
-
nA
VR=0.5V, f=1MHz
VR=2.5V, f=1MHz
C0.5V/C2.5V, f=1MHz
VR=1V, f=470MHz
7.3
2.75
2.4
-
8.4
3.4
-
Capacitance
pF
-
Capacitance Ratio
Series Resistance
2.5
0.35
rS
-
Marking
Type Name
E D
2003. 1. 27
Revision No : 0
1/2
KDV245E
CT - VR
rs - VR
0.6
0.5
0.4
0.3
0.2
0.1
0
30
10
f=1MHz
Ta=25 C
f=470MHz
Ta=25 C
5
3
1
0.1
0.3 0.5
1
3
5
10
0
1
2
3
4
5
6
REVERSE VOLTAGE V (V)
R
REVERSE VOLTAGE V (V)
R
2003. 1. 27
Revision No : 0
2/2
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