KDV262E_03 [KEC]
SILICON EPITAXIAL PLANAR DIODE; 硅外延平面二极管
| 型号： | KDV262E_03 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | SILICON EPITAXIAL PLANAR DIODE |
| 文件： | 总2页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KDV262E
SEMICONDUCTOR
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
CATV TUNING.
FEATURES
C
E
High Capacitance Ratio : C2V/C25V=12.5(Typ.)
Low Series Resistance : rS=0.6 (Typ.)
1
Excellent C-V Characteristics, and Small Tracking Error.
Useful for Small Size Tuner.
2
D
F
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
DIM MILLIMETERS
_
A
B
C
D
E
F
1.60+0.10
SYMBOL
RATING
34
UNIT
V
_
1.20+0.10
_
0.80+0.10
VR
VRM
Tj
Reverse Voltage
_
0.30+0.05
_
+
0.60 0.10
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
36 (RL=10k
125
)
V
_
+
0.13 0.05
1. ANODE
2. CATHODE
Tstg
-55 125
ESC
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Reverse Voltage
SYMBOL
VR
TEST CONDITION
MIN.
34
TYP.
-
MAX.
UNIT
V
IR=1 A
-
10
38
3.0
-
IR
VR=28V
Reverse Current
Capacitance
-
-
nA
pF
C2V
VR=2V, f=1MHz
VR=25V, f=1MHz
33
35.5
2.85
12.5
-
C25V
Capacitance
2.6
12.0
1.03
-
pF
C2V/C25V
C25V/C28V
rS
Capacitance Ratio
-
-
VR=5V, f=470MHz
Series Resistance
0.6
0.8
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
0.02
C(Min.)
(VR=2~25V)
Marking
Type Name
U Q
2003. 10. 16
Revision No : 1
1/2
KDV262E
IR - VR
CV - VR
50
1000p
100p
10p
f=1MHz
Ta=25 C
10
5
Ta=25 C
1p
0.1p
1
0
8
16
24
32
0
10
20
30
REVERSE VOLTAGE V (V)
R
REVERSE VOLTAGE V (V)
R
r s - VR
C - Ta
3
2
1
0
1.0
0.8
f=1MHz
V =2V
f=470MHz
Ta=25 C
R
10V
20V
0.6
0.4
0.2
0
25V
-1
-2
-40
-20
0
20
40
60
80
1
3
5
10
30
AMBIENT TEMPERATURE Ta ( C)
REVERSE VOLTAGE V (V)
R
2003. 10. 16
Revision No : 1
2/2
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