KDV269E_03 [KEC]
SILICON EPITAXIAL PLANAR DIODE; 硅外延平面二极管
| 型号： | KDV269E_03 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | SILICON EPITAXIAL PLANAR DIODE |
| 文件： | 总2页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KDV269E
SEMICONDUCTOR
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
CATV TUNING.
FEATURES
C
E
High Capacitance Ratio : C2V/C25V=11.0(Min.)
Low Series Resistance : rS=0.75 (Max.)
Excellent C-V Characteristics, and Small Tracking Error.
Useful for Small Size Tuner.
1
2
D
F
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
DIM MILLIMETERS
_
A
B
C
D
E
F
1.60+0.10
SYMBOL
RATING
34
UNIT
V
_
1.20+0.10
_
0.80+0.10
VR
Tj
Reverse Voltage
_
0.30+0.05
_
+
0.60 0.10
Junction Temperature
Storage Temperature Range
125
_
+
0.13 0.05
1. ANODE
2. CATHODE
Tstg
-55 125
ESC
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Reverse Current
SYMBOL
IR
TEST CONDITION
VR=28V
MIN.
TYP.
MAX.
UNIT
nA
pF
-
29
2.5
11.0
-
-
10
34
C2V
C25V
VR=2V, f=1MHz
VR=25V, f=1MHz
Capacitance
31.5
2.75
11.5
-
Capacitance
2.9
-
pF
C2V/C25V
rS
Capacitance Ratio
Series Resistance
-
VR=5V, f=470MHz
0.75
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
0.02
C(Min.)
(VR=2~25V)
Marking
Type Name
U R
2003. 12. 2
Revision No : 2
1/2
KDV269E
IR - VR
CT - VR
10-9
60
40
f=1MHz
10-10
10-11
10-12
10-13
20
0
0
10
20
30
40
1
10
50
REVERSE VOLTAGE V (V)
R
REVERSE VOLTAGE V (V)
R
r s - VR
∆(LOG CT) / ∆(LOG VR) - VR
0.8
0.6
0.4
0
f=470MHz
-1
-2
-3
0.2
0
1
10
50
1
10
50
REVERSE VOLTAGE V (V)
R
REVERSE VOLTAGE V (V)
R
2003. 12. 2
Revision No : 2
2/2
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