KDV269E [KEC]
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING); 变容二极管硅外延平面二极管（ CATV调谐）
| 型号： | KDV269E |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING) |
| 文件： | 总2页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KDV269E
SEMICONDUCTOR
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
CATV TUNING.
FEATURES
ᴌHigh Capacitance Ratio : C2V/C25V=11.5(Typ.)
ᴌLow Series Resistance : rS=0.55ή(Typ.)
ᴌExcellent C-V Characteristics, and Small Tracking Error.
ᴌUseful for Small Size Tuner.
C
E
1
2
D
F
MAXIMUM RATING (Ta=25ᴱ)
DIM MILLIMETERS
_
A
B
C
D
E
F
1.60+0.10
CHARACTERISTIC
Reverse Voltage
SYMBOL
VR
RATING
34
UNIT
V
_
1.20+0.10
_
0.80+0.10
_
0.30+0.05
_
+
0.60 0.10
VRM
Tj
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
36 (RL=10kή)
125
V
_
1. ANODE
2. CATHODE
+
0.13 0.05
ᴱ
Tstg
-55ᴕ125
ᴱ
ESC
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC SYMBOL
Reverse Voltage
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
VR
IR
IR=1ỌA
VR=28V
34
-
-
-
10
34
2.9
-
Reverse Current
Capacitance
-
nA
pF
C2V
VR=2V, f=1MHz
VR=25V, f=1MHz
29
31.5
2.75
11.5
1.05
0.55
C25V
Capacitance
2.5
11.0
1.03
-
pF
C2V/C25V
C25V/C28V
rS
Capacitance Ratio
-
-
VR=5V, f=470MHz
Series Resistance
0.7
ή
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
⏊0.02
C(Min.)
(VR=2~25V)
Marking
Type Name
U R
2000. 3. 24
Revision No : 0
1/2
KDV269E
C V - VR
I R - VR
500
1000p
100p
10p
f=1MHz
Ta=25 C
100
50
1p
0.1p
10
0
10
20
30
0
8
16
24
32
REVERSE VOLTAGE V (V)
R
REVERSE VOLTAGE V (V)
R
C - Ta
r s - VR
1.0
0.8
0.6
0.4
0.2
3
2
f=1MHz
V =2V
f=470MHz
Ta=25 C
R
10V
1
0
20V
25V
-1
-2
0
1
3
5
10
30
-40
-20
0
20
40
60
80
REVERSE VOLTAGE V (V)
R
AMBIENT TEMPERATURE Ta ( C)
2000. 3. 24
Revision No : 0
2/2
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