KDV262 [KEC]
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING); 变容二极管硅外延平面二极管（ CATV调谐）
| 型号： | KDV262 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING) |
| 文件： | 总2页 (文件大小：76K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KDV262
SEMICONDUCTOR
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
CATV TUNING.
FEATURES
G
B
1
ᴌHigh Capacitance Ratio : C2V/C25V=12.5(Typ.)
ᴌLow Series Resistance : rS=0.6ή(Typ.)
ᴌExcellent C-V Characteristics, and Small Tracking Error.
ᴌUseful for Small Size Tuner.
H
2
J
D
C
I
DIM
A
MILLIMETERS
_
2.50+0.1
MAXIMUM RATING (Ta=25ᴱ)
_
+
1.25 0.05
B
C
D
E
_
+
0.90 0.05
CHARACTERISTIC
Reverse Voltage
SYMBOL
VR
RATING
34
UNIT
V
0.30+0.06/-0.04
M
M
_
+
1.70 0.05
MIN 0.17
F
G
H
I
_
+
0.126 0.03
VRM
Tj
Peak Reverse Voltage
Junction Temperature
Storage Temperature Range
36 (RL=10kή)
125
V
1. ANODE
0~0.1
1.0 MAX
_
+
0.15 0.05
2. CATHODE
ᴱ
J
K
L
_
0.4+0.05
Tstg
-55ᴕ125
ᴱ
2
+4/-2
4~6
M
USC
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
VR
TEST CONDITION
MIN.
34
TYP.
-
MAX.
UNIT
V
Reverse Voltage
IR=1ỌA
-
10
38
3.0
-
IR
VR=28V
Reverse Current
Capacitance
-
-
nA
pF
C2V
VR=2V, f=1MHz
VR=25V, f=1MHz
33
35.5
2.85
12.5
-
C25V
Capacitance
2.6
12.0
1.03
-
pF
C2V/C25V
C25V/C28V
rS
Capacitance Ratio
-
-
VR=5V, f=470MHz
Series Resistance
0.6
0.8
ή
Note : Available in matched group for capacitance to 2.0%.
C(Max.)-C(Min.)
⏊0.02
C(Min.)
(VR=2~25V)
Marking
Type Name
U Q
2001. 6. 11
Revision No : 1
1/2
KDV262
IR - VR
CV - VR
500
1000p
100p
10p
f=1MHz
Ta=25 C
C
100
50
=25
Ta
1p
0.1p
10
0
8
16
24
32
0
10
20
30
REVERSE VOLTAGE V (V)
R
REVERSE VOLTAGE V (V)
R
r s - VR
rs - f
1.0
0.8
0.6
1.0
0.8
V =5V
f=470MHz
Ta=25 C
R
Ta=25 C
0.6
0.4
0.2
0
0.4
0.2
0
50
100
300
500
1
3
5
10
30
FREQUENCY f (MHz)
REVERSE VOLTAGE V (V)
R
C - Ta
3
2
1
0
f=1MHz
V =2V
R
10V
20V
25V
-1
-2
-40
-20
0
20
40
60
80
AMBIENT TEMPERATURE Ta ( C)
2001. 6. 11
Revision No : 1
2/2
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