KDV258E [KEC]
SILICON EPITAXIAL PLANAR DIODE; 硅外延平面二极管
| 型号： | KDV258E |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | SILICON EPITAXIAL PLANAR DIODE |
| 文件： | 总2页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KDV258E
SEMICONDUCTOR
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES
C
E
High Capacitance Ratio : C1V/C4V =2.0(Min.)
Low Series Resistance : rs=0.45 (Max.)
1
2
D
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
F
SYMBOL
RATING
15
UNIT
V
VR
Tj
DIM MILLIMETERS
Reverse Voltage
_
A
B
C
D
E
F
1.60+0.10
_
1.20+0.10
Junction Temperature
Storage Temperature Range
150
_
0.80+0.10
_
+
0.30 0.05
Tstg
-55 150
_
+
0.60 0.10
1. ANODE
_
+
0.13 0.05
2. CATHODE
ESC
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Reverse Voltage
SYMBOL
VR
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
15
-
-
-
-
-
-
-
-
IR=1 A
VR=10V
IR
C1V
C4V
K
Reverse Current
10
nA
VR=1V, f=1MHz
VR=4V, f=1MHz
19.0
8.5
2.0
-
21.0
10.0
-
Capacitance
pF
Capacitance Ratio
Series Resistance
-
rS
VR=1V, f=470MHz
0.45
Marking
Type Name
U 6
2003. 3. 25
Revision No : 0
1/2
KDV258E
IR - VR
C - VR
1K
100
10
1
f=1MHz
Ta=25 C
Ta=25 C
100
10
0
2
4
6
8
10
12
14 16
0
5
10
15
20
REVERSE VOLTAGE V (V)
R
REVERSE VOLTAGE V (V)
R
2003. 3. 25
Revision No : 0
2/2
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