KDV251M_02 [KEC]
SILICON EPITAXIAL PLANAR DIODE; 硅外延平面二极管
| 型号： | KDV251M_02 |
| 厂家： | 
KEC(KOREA ELECTRONICS) |
| 描述： | SILICON EPITAXIAL PLANAR DIODE |
| 文件： | 总2页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KDV251M/S
SEMICONDUCTOR
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
VCO FOR C/P, CB PLL
FEATURES
B
Low Series Resistance : 0.6 (Max.)
DIM
A
MILLIMETERS
3.20 MAX
O
High Capacitance Ratio : 1.7(Min.) 2.2(Max.)
H
M
B
4.30 MAX
C
D
E
0.55 MAX
_
2.40+0.15
1.27
F
G
H
J
2.30
_
C
+
14.00 0.50
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
0.60 MAX
1.05
E
E
SYMBOL RATING
UNIT
V
K
1.45
L
25
VR
Tj
Reverse Voltage
12
150
M
N
0.80
0.55 MAX
2
1
N
O
0.75
Junction Temperature
Storage Temperature Range
L
Tstg
-55 150
1. ANODE
2. CATHODE
1
2
CLASSIFICATION OF CAPACITANCE RATIO GRADE
TO-92M
CAPACITANCE RATIO (C1.6V/C5V
)
GRADE
NONE
1.70 2.20
1.70 1.82
1.80 1.92
1.90 2.020
2.00 2.12
2.10 2.20
A
B
C
D
E
E
B
L
L
DIM
A
MILLIMETERS
_
+
2.93 0.20
B
C
D
E
1.30+0.20/-0.15
1.30 MAX
2
3
0.45+0.15/-0.05
2.40+0.30/-0.20
1.90
1
G
H
J
0.95
0.13+0.10/-0.05
K
L
0.00 ~ 0.10
0.55
P
P
0.20 MIN
1.00+0.20/-0.10
7
M
N
P
Marking
Grade
M
Lot No.
3
1. NC
2. ANODE
3. CATHODE
Type Name
Q3
2
1
SOT-23
ELECTRICAL CHARACTERISTICS (Ta=25
)
SYMBOL
VR
CHARACTERISTIC
Reverse Voltage
TEST CONDITION
IR=10 A
MIN.
12
-
TYP.
MAX.
-
UNIT
V
-
-
-
-
-
-
IR
VR=9V
Reverse Current
Capacitance
200
38
nA
pF
C1.6V
C5V
VR=1.6V, f=1MHz
VR=5V, f=1MHz
23
11
1.7
-
Capacitance
19
pF
C1.6V/C5V
rS
Capacitance Ratio
Series Resistance
2.2
0.6
VR=1V, f=50MHz
2002. 6. 25
Revision No : 4
1/2
KDV251M/S
C - VR
Q - VR
100
2k
1k
f=1MHz
Ta=25 C
f=50MHz
Ta=25 C
50
30
500
300
10
5
100
0
2
4
6
8
10
0
2
4
6
8
10
REVERSE VOLTAGE V
(V)
REVERSE VOLTAGE V (V)
R
R
2002. 6. 25
Revision No : 4
2/2
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