KDV245 [KEC]
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO); 变容二极管硅外延平面二极管( VCO用于UHF波段收音机)型号: | KDV245 |
厂家: | KEC(KOREA ELECTRONICS) |
描述: | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR UHF BAND RADIO) |
文件: | 总2页 (文件大小:388K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
KDV245
SEMICONDUCTOR
VARIABLE CAPACITANCE DIODE
SILICON EPITAXIAL PLANAR DIODE
TECHNICAL DATA
VCO FOR UHF Band Radio.
FEATURES
G
B
1
High Capacitance Ratio : C0.5V/C2.5V =2.5(Typ.)
Low Series Resistance : rs=0.35 (Typ.)
Useful for Small Size Tuner.
H
2
J
D
C
I
DIM MILLIMETERS
_
A
B
C
D
E
F
2.50+0.1
MAXIMUM RATING (Ta=25
CHARACTERISTIC
)
_
1.25+0.05
_
+
0.90 0.05
SYMBOL
RATING
10
UNIT
V
0.30+0.06/-0.04
_
M
M
+
1.70 0.05
VR
Tj
Reverse Voltage
MIN 0.17
_
+
0.126 0.03
G
H
I
Junction Temperature
150
1. ANODE
2. CATHODE
0~0.1
1.0 MAX
Tstg
Storage Temperature Range
-55 150
_
0.15+0.05
J
_
0.4+0.05
K
L
M
2
+4/-2
4~6
USC
ELECTRICAL CHARACTERISTICS (Ta=25
)
CHARACTERISTIC
Reverse Voltage
SYMBOL
VR
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
V
IR=1 A
VR=10V
10
-
-
-
3
IR
C0.5V
C2.5V
K
Reverse Current
-
-
nA
VR=0.5V, f=1MHz
VR=2.5V, f=1MHz
C0.5V/C2.5V, f=1MHz
VR=1V, f=470MHz
7.3
2.75
2.4
-
8.4
3.4
-
Capacitance
pF
-
Capacitance Ratio
Series Resistance
2.5
0.35
rS
-
Marking
Type Name
E D
2003. 1. 27
Revision No : 0
1/2
KDV245
CT - VR
rs - VR
0.6
0.5
0.4
0.3
0.2
0.1
0
30
10
f=1MHz
Ta=25 C
f=470MHz
Ta=25 C
5
3
1
0.1
0.3 0.5
1
3
5
10
0
1
2
3
4
5
6
REVERSE VOLTAGE V (V)
R
REVERSE VOLTAGE V (V)
R
2003. 1. 27
Revision No : 0
2/2
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