2SD1555 [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1555 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1555
DESCRIPTION
·
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·For color TV horizontal output applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Fig.1 simplified outline (TO-3P(H)IS) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25℃
SYMBOL
PARAMETER
CONDITIONS
Open emitter
VALUE
UNIT
VCBO
Collector-base voltage
1500
V
VCEO
VEBO
IC
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
600
5
Open collector
V
A
5
IB
Base current
2.5
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
50
W
℃
℃
150
-55~150
Tj
Tstg
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1555
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VEBO
VCEsat
VBEsat
ICBO
hFE
PARAMETER
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Emitter-base saturation voltage
Collector cut-off current
DC current gain
CONDITIONS
IE=0.2A , IC=0
MIN
TYP.
MAX
UNIT
V
5
IC=4A ;IB=0.8A
IC=4A; IB=0.8A
VCB=500V; IE=0
IC=1A ; VCE=5V
IC=0.1A ; VCE=10V
IE=0 ; VCB=10V;f=1MHz
IF=5A
3.0
5.0
1.5
10
V
V
μA
8
fT
Transition frequency
3
MHz
pF
COB
VF
Collector output capacitance
Diode forward voltage
165
2.0
1.0
V
Fall time
0.5
μs
tf
ICP=4A ;IB1(end)=0.8A
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1555
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic
相关型号：
2SD1556
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR(COLOR TV HORIZONTAL OUTPUT APPLICATIONS)
Wing Shing
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