2SD1562 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1562 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1562 2SD1562A
DESCRIPTION
·With TO-220C package
·Complement to type 2SB1085/1085A
·High transition frequency
APPLICATIONS
·For low freuqency power amplifier
applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Tc=25ꢀ )
SYMBOL
PARAMETER
CONDITIONS
VALUE
120
160
120
160
5
UNIT
2SD1562
2SD1562A
2SD1562
2SD1562A
VCBO
Collector-base voltage
Open emitter
V
V
VCEO
Collector-emitter voltage
Open base
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
A
1.5
ICM
Collector current-peak
3.0
TC=25ꢀ
Ta=25ꢀ
20
PC
Collector power dissipation
W
1.5
Tj
Junction temperature
Storage temperature
150
-55~150
ꢀ
ꢀ
Tstg
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1562 2SD1562A
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
120
160
120
160
5
TYP.
MAX
UNIT
2SD1562
2SD1562A
2SD1562
2SD1562A
Collector-emitter
breakdown voltage
V(BR)CEO
IC=1mA; IB=0
V
Collector-base
breakdown voltage
V(BR)CBO
IC=50µA; IE=0
IE=50µA; IC=0
V
V(BR)EBO
VCEsat
VBEsat
ICBO
Emitter-base breakdown voltage
V
V
Collector-emitter saturation voltage IC=1 A;IB=0.1 A
2.0
1.5
1.0
1.0
320
200
Base-emitter on saturation voltage
Collector cut-off current
IC=1 A;IB=0.1 A
VCB=120V; IE=0
VEB=4V; IC=0
V
µA
µA
IEBO
Emitter cut-off current
2SD1562
DC current gain
60
60
hFE
IC=0.1A ; VCE=5V
2SD1562A
fT
Transition frequency
Output capacitance
IE=-0.1A ; VCE=5V
80
20
MHz
pF
COB
IE=0 ; VCB=10V;f=1MHz
ꢀ hFE classifications
TYPE
D
E
F
2SD1562
2SD1562A
60-120
60-120
100-200
100-200
160-320
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1562 2SD1562A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
相关型号：
2SD1562/D
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1562/DE
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1562/E
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1562/F
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1562A/D
Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1562A/DE
Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1562A/E
Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1562AC7
Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1562AC7/D
Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
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