2SD1559 [RENESAS]
Silicon NPN Triple Diffused; 硅NPN三重扩散
| 型号： | 2SD1559 |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | Silicon NPN Triple Diffused |
| 文件： | 总7页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2SD1559
Silicon NPN Triple Diffused
ADE-208-914 (Z)
1st. Edition
September 2000
Application
Low frequency power amplifier complementary pair with 2SB1079
Outline
TO-3P
2
1
1. Base
2. Collector
(Flange)
3 kΩ
(Typ)
400 Ω
(Typ)
3. Emitter
1
3
2
3
2SD1559
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
100
100
V
7
V
20
A
Collector peak current
Base current
IC(peak)
30
A
IB
3
A
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
PC*1
Tj
100
W
°C
°C
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
100
100
100
7
—
—
V
IC = 0.1 mA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
—
—
V
V
V
IC = 25 mA, RBE = ∞
IC = 200 mA, RBE = ∞*1
VEB = 50 mA, IC = 0
Collector to emitter sustain
voltage
VCEO(sus)
Emitter to base breakdown
voltage
V(BR)EBO
Collector cutoff current
ICBO
ICEO
hFE
—
—
—
—
—
100
1.0
µA
VCB = 100 V, IE = 0
—
mA
VCE = 80 V, RBE = ∞
VCE = 3 V, IC = 10 A*1
IC = 10 A, IB = 20 mA*1
DC current transfer ratio
1000
—
20000
2.0
Collector to emitter saturation VCE(sat)1
voltage
V
V
V
V
Base to emitter saturatiopn
voltage
VBE(sat)1
—
—
—
—
—
—
2.5
3.0
3.5
Collector to emitter saturation VCE(sat)2
voltage
IC = 20 A, IB = 200 mA*1
Base to emitter saturation
voltage
VBE(sat)2
Turn on time
ton
tstg
tf
—
—
—
1.0
9.0
3.0
—
—
—
µs
µs
µs
IC = 10 A, IB1 = –IB2 = 20 mA
Storage time
Fall time
Note: 1. Pulse test.
2SD1559
Maximum Collector Dissipation Curve
Area of Safe Operation
120
80
iC (peak)
10 µs
30
10
IC (max)
3
1
40
0.3
0.1
Ta = 25°C
1 shot pulse
1
3
10
30
100
300
0
50
100
150
Case temperature TC (°C)
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
3.5
20
16
12
8
30,000
10,000
3,000
1,000
25°C
1
300
100
IB = 0.5 mA
4
VCE = 3 V
Pulse
TC = 25°C
30
0.3
0
1
2
3
4
5
1.0
3
10
30
Collector to emitter voltage VCE (V)
Collector current IC (A)
2SD1559
Switching Time vs. Collector Current
tstg
Saturation Voltage vs. Collector Current
10
10
200
500
3
3
VBE (sat)
tf
1.0
1.0
ton
VCE (sat)
lC/lB = 200
0.3
0.1
0.3
0.1
500
VCC = 30 V
IC = 500 IB1 = –500 IB2
Ta = 25°C
0.03
0.01
0.03
0.01
Ta = 25°C
Pulse
0.3
1.0
3
10
30
0.3
1.0
3
10
30
Collector current IC (A)
Collector current IC (A)
Transient Thermal Resistance
10
3
0.1 to 100 s
1.0
0.3
0.1
0.03
TC = 25°C
1 shot
0.01
0.1
1.0
1.0
10
10
100 (s)
100 (ms)
0.1
Time t
2SD1559
When using this document, keep the following in mind:
1. This document may, wholly or partially, be subject to change without notice.
2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of
this document without Hitachi’s permission.
3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any
other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any intellectual
property claims or other problems that may result from applications based on the examples described
herein.
5. No license is granted by implication or otherwise under any patents or other rights of any third party or
Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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U S A
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