2SD1559 [HITACHI]
Silicon NPN Triple Diffused; 硅NPN三重扩散
| 型号： | 2SD1559 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon NPN Triple Diffused |
| 文件： | 总6页 (文件大小：39K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1559
Silicon NPN Triple Diffused
Application
Low frequency power amplifier complementary pair with 2SB1079
Outline
TO-3P
2
1
1. Base
2. Collector
(Flange)
3 kΩ
400 Ω
3. Emitter
(Typ)
(Typ)
1
3
2
3
2SD1559
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
100
100
V
7
V
20
A
Collector peak current
Base current
IC(peak)
30
A
IB
3
A
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
PC*1
Tj
100
W
°C
°C
150
Tstg
–55 to +150
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
100
100
100
7
—
—
V
IC = 0.1 mA, IE = 0
Collector to emitter breakdown V(BR)CEO
voltage
—
—
—
—
—
—
V
V
V
IC = 25 mA, RBE = ∞
IC = 200 mA, RBE = ∞*1
VEB = 50 mA, IC = 0
Collector to emitter sustain
voltage
VCEO(sus)
Emitter to base breakdown
voltage
V(BR)EBO
Collector cutoff current
ICBO
ICEO
hFE
—
—
—
—
—
100
1.0
µA
VCB = 100 V, IE = 0
—
mA
VCE = 80 V, RBE = ∞
VCE = 3 V, IC = 10 A*1
IC = 10 A, IB = 20 mA*1
DC current transfer ratio
1000
—
20000
2.0
Collector to emitter saturation VCE(sat)1
voltage
V
V
V
V
Base to emitter saturatiopn
voltage
VBE(sat)1
—
—
—
—
—
—
2.5
3.0
3.5
Collector to emitter saturation VCE(sat)2
voltage
IC = 20 A, IB = 200 mA*1
Base to emitter saturation
voltage
VBE(sat)2
Turn on time
ton
tstg
tf
—
—
—
1.0
9.0
3.0
—
—
—
µs
µs
µs
IC = 10 A, IB1 = –IB2 = 20 mA
Storage time
Fall time
Note: 1. Pulse test.
2
2SD1559
Maximum Collector Dissipation Curve
Area of Safe Operation
120
80
iC (peak)
10 µs
30
10
IC (max)
3
1
40
0.3
0.1
Ta = 25°C
1 shot pulse
1
3
10
30
100
300
0
50
100
150
Case temperature TC (°C)
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
3.5
20
16
12
8
30,000
10,000
3,000
1,000
25°C
1
300
100
IB = 0.5 mA
4
VCE = 3 V
Pulse
TC = 25°C
30
0.3
0
1
2
3
4
5
1.0
3
10
30
Collector to emitter voltage VCE (V)
Collector current IC (A)
3
2SD1559
Switching Time vs. Collector Current
tstg
Saturation Voltage vs. Collector Current
10
10
200
500
3
3
VBE (sat)
tf
1.0
1.0
ton
VCE (sat)
lC/lB = 200
0.3
0.1
0.3
0.1
500
VCC = 30 V
0.03
0.01
0.03
0.01
Ta = 25°C
Pulse
I
C = 500 IB1 = –500 IB2
Ta = 25°C
0.3
1.0
3
10
30
0.3
1.0
3
10
30
Collector current IC (A)
Collector current IC (A)
Transient Thermal Resistance
10
3
0.1 to 100 s
1.0
0.3
0.1
0.03
TC = 25°C
1 shot
0.01
0.1
1.0
1.0
10
10
100 (s)
100 (ms)
0.1
Time t
4
Unit: mm
4.8 ± 0.2
15.6 ± 0.3
φ3.2 ± 0.2
1.5
1.6
2.0
1.4 Max
2.8
1.0 ± 0.2
0.6 ± 0.2
0.9
1.0
3.6
5.45 ± 0.5
5.45 ± 0.5
Hitachi Code
JEDEC
TO-3P
—
EIAJ
Conforms
Weight (reference value) 5.0 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
NorthAmerica
Europe
: http:semiconductor.hitachi.com/
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Asia (Taiwan)
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: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm
Japan
: http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
Hitachi Asia (Hong Kong) Ltd.
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7/F., North Tower, World Finance Centre,
Harbour City, Canton Road, Tsim Sha Tsui,
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Tel: <852> (2) 735 9218
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Tel: 535-2100
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Germany
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Tel: <886> (2) 2718-3666
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Tel: <44> (1628) 585000
Fax: <44> (1628) 778322
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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