2SD1559 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1559 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1559
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SB1079
·DARLINGTON
APPLICATIONS
·For low frequency power amplifier
applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3P(I)) and symbol
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
100
100
7
UNIT
V
Open emitter
Open base
V
Open collector
V
20
A
ICM
Collector current-peak
Base current
30
A
IB
3
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
100
150
-55~150
W
ꢀ
Tj
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1559
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat-1
VCEsat -2
VBE sat-1
VBE sat-2
ICBO
PARAMETER
CONDITIONS
MIN
100
100
7
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=25mA ,RBE=∞
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=0.1mA ,IE=0
V
IE=50mA ,IC=0
V
IC=10A; IB=20mA
IC=20A; IB=200mA
IC=10A; IB=20mA
IC=20A; IB=200mA
VCB=100V; IE=0
VCE=80V; RBE=∞
IC=10A ; VCE=3V
2.0
3.0
V
V
2.5
V
3.5
V
100
1.0
µA
mA
ICEO
Collector cut-off current
hFE
DC current gain
1000
20000
Switching times
ton
tstg
tf
Turn-on time
1.0
9.0
3.0
µs
µs
µs
IC=10A; IB1=-IB2=20mA
Storage time
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1559
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
相关型号：
2SD1562/D
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1562/DE
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1562/E
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1562/F
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1562A/D
Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1562A/DE
Power Bipolar Transistor, 1.5A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明