2SD1556_2015 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SD1556_2015 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1556
DESCRIPTION
·
·With TO-3P(H)IS package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·For color TV horizontal output applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Fig.1 simplified outline (TO-3P(H)IS) and symbol
ABSOLUTE MAXIMUM RATINGS AT Tc=25℃
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
CONDITIONS
Open emitter
VALUE
UNIT
1500
V
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
600
Open collector
5
V
A
6
3
IB
Base current
A
PC
Collector power dissipation
Junction temperature
Storage temperature
50
W
℃
℃
150
-55~150
Tj
Tstg
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1556
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VEBO
VCEsat
VBEsat
ICBO
hFE
PARAMETER
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Emitter-base saturation voltage
Collector cut-off current
DC current gain
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IE=200mA , IC=0
5
IC=5A; IB=1A
3.0
5.0
1.5
10
V
IC=5A; IB=1A
V
VCB=500V; IE=0
IC=1A ; VCE=5V
IC=0.1A ; VCE=10V
IE=0 ; VCB=10V;f=1MHz
IF=6A
μA
8
fT
Transition frequency
3
MHz
pF
COB
VF
Collector output capacitance
Diode forward voltage
165
1.6
0.5
2.0
1.0
V
Fall time
μs
tf
ICP=5A ;IB1(end)=1A
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD1556
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
JMnic
相关型号：
2SD1562/D
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1562/DE
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1562/E
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1562/F
Power Bipolar Transistor, 1.5A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明