IXTK250N10 [IXYS]
High Current MegaMOSFET; 高电流MegaMOSFET
| 型号： | IXTK250N10 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | High Current MegaMOSFET |
| 文件： | 总2页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance Technical Information
IXTK 250N10
VDSS = 100 V
High Current
MegaMOSTMFET
ID25
= 250 A
RDS(on)
= 5 mΩ
N-Channel Enhancement Mode
Symbol
Testconditions
Maximum ratings
TO-264AA(IXTK)
VDSS
VDGR
TJ = 25°C to 150°C
100
100
V
V
TJ = 25°C to 150°C; RGS = 1.0 MΩ
VGS
Continuous
Transient
±20
±30
V
V
VGSM
D (TAB)
G
ID25
ID(RMS)
IDM
TC = 25°C MOSFET chip capability
External lead current limit
TC = 25°C, pulse width limited by TJM
TC = 25°C
250
75
1000
90
A
D
S
A
A
A
IAR
G = Gate
D
= Drain
S = Source
Tab = Drain
EAR
EAS
TC = 25°C
TC = 25°C
80
4.0
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
5
V/ns
PD
TJ
TC = 25°C
730
W
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
Features
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•International standard package
•Fast switching times
TL
1.6 mm (0.063 in.) from case for 10 s
Mountingtorque
300
0.7/6
10
°C
Nm/lb.in.
g
Md
Weight
TO-264
Applications
•Motor controls
•DC choppers
Symbol Test Conditions
Characteristic Values
•Switched-mode power supplies
•DC-DC Converters
•Linear Regulators
(TJ = 25°C unless otherwise specified)
Min. Typ.
Max.
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 1 mA
100
V
V
Advantages
VDS = VGS, ID = 250 µA
VGS = ±20 V DC, VDS = 0
2.0
4.0
•Easy to mount with one screw
(isolated mounting screw hole)
•Space savings
±200 nA
•High power density
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
50 µA
1
mA
RDS(on)
VGS = 10 V, ID = 90 A
5 mΩ
Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%
© 2003 IXYS All rights reserved
DS99022(03/03)
IXTK 250N10
Symbol
Test Conditions
Characteristic values
Min. Typ. Max.
TO-264 AA Outline
(TJ = 25°C unless otherwise specified)
gfs
VDS = 10 V; ID = 90 A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
75
110
S
Ciss
Coss
Crss
7800
3200
1300
pF
pF
pF
td(on)
tr
td(off)
tf
35
40
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 90 A
RG = 1.0 Ω (External)
120
55
Dim.
Millimeter
Inches
Max.
Min.
Max.
Min.
.190
A
A1
A2
4.82
2.54
2.00
5.13
2.89
2.10
.202
.114
.083
Qg(on)
Qgs
390
60
nC
nC
nC
.100
.079
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
b
b1
b2
1.12
2.39
2.90
1.42
2.69
3.09
.044
.094
.114
.056
.106
.122
Qgd
180
c
D
0.53
25.91
19.81
0.83
26.16
19.96
.021
1.020
.780
.033
1.030
.786
RthJC
RthCK
0.17 K/W
K/W
E
e
5.46BSC
.215BSC
0.15
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
L
L1
20.32
2.29
20.83
2.59
.800
.090
.820
.102
P
3.17
3.66
.125
.144
Q
Q1
6.07
8.38
6.27
8.69
.239
.330
.247
.342
R
R1
3.81
1.78
4.32
2.29
.150
.070
.170
.090
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
Source-Drain Diode
Ratings and Characteristics
(TJ = 25°C unless otherwise specified)
Symbol
IS
Test Conditions
Min.
Typ.
Max.
VGS = 0V
250
A
A
V
ISM
Repetitive; pulse width limited by TJM
1000
1.2
VSD
IF = 90 A, VGS = 0 V,
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 30A, -di/dt = 100 A/µs, VR = 50 V
150
2
ns
Qrr
µC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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