IXFH16N80P [IXYS]
PolarHV Power MOSFET; PolarHV功率MOSFET
| 型号： | IXFH16N80P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHV Power MOSFET |
| 文件： | 总5页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHVTM
Power MOSFET
IXFH 16N80P
IXFT 16N80P
IXFV 16N80P
IXFV 16N80PS
VDSS = 800
ID25 = 16
V
A
RDS(on) ≤ 600 mΩ
N-Channel Enhancement Mode
Fast Recovery Diode
trr
≤ 250 ns
Avalanche Rated
TO-247 (IXFH)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
800
800
V
TJ = 25°C to 150°C; RGS = 1 MΩ
V
G
D
S
VGSS
VGSM
Continuous
Transient
30
40
V
V
TO-268 (IXFT)
ID25
IDM
TC = 25°C
16
40
A
A
TC = 25°C, pulse width limited by TJM
IAR
TC = 25°C
TC = 25°C
TC = 25°C
8
30
A
mJ
J
G
S
D (TAB)
EAR
EAS
1.0
PLUS220 (IXFV)
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 5 Ω
10
V/ns
PD
TC = 25°C
460
W
G
D
S
D (TAB)
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
PLUS220SMD (IXFV...S)
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
° C
° C
Md
Mounting torque (TO-247)
Mounting force (PLUS220)
1.13/10 Nm/lb.in.
FC
11..65/2.5..15
N/lb
G
S
D (TAB)
D = Drain
TAB = Drain
Weight
TO-247
TO-268
PLUS220 & PLUS220SMD
6.0
5.0
4.0
g
g
g
G = Gate
S = Source
Features
Symbol
Test Conditions
Characteristic Values
z Fast Recovery diode
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
z Unclamped Inductive Switching (UIS)
rated
z International standard packages
z Low package inductance
- easy to drive and to protect
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 4 mA
VGS = 30 V, VDS = 0 V
800
V
V
3.0
5.0
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
250
μA
μA
Advantages
z
TJ = 125°C
Easy to mount
Space savings
z
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
600 mΩ
z
High power density
DS99599E(07/06)
© 2006 IXYS All rights reserved
IXFH 16N80P IXFT 16N80P
IXFV 16N80P IXFV 16N80PS
Symbol
gfs
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, pulse test
9
16
S
Ciss
Coss
Crss
4600
330
23
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
27
32
75
29
ns
ns
ns
ns
VGS = 10 V, VDS = VDSS, ID = 0.5 ID25
RG = 5 Ω (External)
Qg(on)
Qgs
71
21
23
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
RthJC
RthCS
0.27 °C/W
°C/W
(TO-247)
0.21
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
Symbol
IS
Test Conditions
VGS = 0 V
16
48
A
ISM
Repetitive
A
V
VSD
IF = IS, VGS = 0 V, pulse test
1.5
250
trr
IF = 25A, -di/dt = 100 A/μs
150
7
ns
A
IRM
QRM
VR = 100V; VGS = 0 V
0.7
μC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,727,585
7,005,734 B2
7,063,975 B2
6,534,343
6,583,505
6,710,405 B2 6,759,692
6,710,463
6,771,478 B2 7,071,537
IXFH 16N80P IXFT 16N80P
IXFV 16N80P IXFV 16N80PS
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
16
14
12
10
8
24
22
20
18
16
14
12
10
8
V
= 10V
7V
GS
V
= 10V
7V
GS
6V
6V
6
4
6
5V
6
4
2
5V
10
2
0
0
0
1
2
3
4
5
7
8
9
10
0
2
4
6
8
12
14
16
18
20
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 8A Value
vs. Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
16
14
12
10
8
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
V
= 10V
GS
V
= 10V
GS
7V
6V
I
= 16A
D
5V
I
= 8A
D
6
4
2
0.7
0.4
0
0
2
4
6
8
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
150
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. R
Normalized to I = 8A Value
Fig
.
6.
M
a
xi
m
u
m
D
r
ai
n
C
u
r
r
e
n
t vs.
DS(on)
D
Case Temperature
vs. Drain Current
2.6
20
18
16
14
12
10
8
2.4
V
= 10V
GS
T = 125ºC
J
2.2
2
1.8
1.6
1.4
6
T = 25ºC
J
1.2
4
1
2
0.8
0
0 25 50 75 100 125 150
-50
-25
0
2
4
6
8
1
0
12
14
1
6
18
2
0
2224
TC - Degrees Centigrade
I - Amperes
D
© 2006 IXYS All rights reserved
IXFH 16N80P IXFT 16N80P
IXFV 16N80P IXFV 16N80PS
Fig. 8. Transconductance
Fig. 7. Input Admittance
28
24
20
16
12
8
20
18
16
14
12
10
8
T
J
= 125ºC
25ºC
- 40ºC
T
J
= - 40ºC
25ºC
125ºC
6
4
4
2
0
0
3
3.5
4
4.5
5
5.5
6
0
2
4
6
8
10 12 14 16 18 20 22 24
ID - Amperes
VGS - Volts
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
50
10
9
8
7
6
5
4
3
2
1
0
V
= 400V
DS
45
40
35
30
25
20
15
10
5
I
I
= 8A
D
G
= 10mA
T
J
= 125ºC
T
J
= 25ºC
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
0
10
20
30
40
50
60
70
80
VSD - Volts
QG - NanoCoulombs
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
10,000
1,000
100
1.00
0.10
0.01
f = 1 MHz
C
iss
C
oss
C
rss
20
10
0
5
10
15
25
30
35
40
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
F_16N80P (67) 04-28-06.xls
IXFH 26N60P IXFT 26N60P
IXFV 26N60P IXFV 26N60PS
TO-247 AD (IXFH) Outline
TO-268 (IXFT) Outline
PLUS220 (IXFV) Outline
1
2
3
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
∅P 3.55
3.65
.140 .144
Q
5.89
6.40 0.232 0.252
R
S
4.32
6.15 BSC
5.49
.170 .216
242 BSC
PLUS220SMD (IXFV_S) Outline
© 2006 IXYS All rights reserved
相关型号：
©2020 ICPDF网 联系我们和版权申明