IXFH18N60X [IXYS]
Power Field-Effect Transistor,;
| 型号： | IXFH18N60X |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总6页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
X-Class HiPerFETTM
Power MOSFET
VDSS = 600V
ID25 = 18A
RDS(on) 230m
IXFA18N60X
IXFP18N60X
IXFH18N60X
TO-263 AA (IXFA)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
G
S
D (Tab)
TO-220AB (IXFP)
Symbol
VDSS
Test Conditions
Maximum Ratings
TJ = 25C to 150C
600
600
V
V
G
VDGR
TJ = 25C to 150C, RGS = 1M
D
D (Tab)
S
VGSS
VGSM
Continuous
Transient
30
40
V
V
TO-247 (IXFH)
ID25
IDM
TC = 25C
TC = 25C, Pulse Width Limited by TJM
18
36
A
A
IA
TC = 25C
TC = 25C
5
A
G
EAS
500
mJ
D
S
D (Tab)
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
50
V/ns
W
G = Gate
S = Source
D
= Drain
320
Tab = Drain
TJ
-55 ... +150
150
C
C
C
TJM
Tstg
-55 ... +150
Features
TLTL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
FC
Md
Mounting Force (TO-263)
Mounting Torque (TO-247 & TO-220)
10..65 / 2.2..14.6
1.13 / 10
N/lb
Nm/lb.in
Low Package Inductance
Weight
TO-263
TO-220
TO-247
2.5
3.0
6.0
g
g
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 250μA
VDS = VGS, ID = 1.5mA
VGS = 30V, VDS = 0V
VDS = VDSS, VGS = 0V
600
V
V
2.5
4.5
Applications
100 nA
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
IDSS
10 A
500 A
TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
230 m
Robotics and Servo Controls
DS100660A(5/15)
© 2015 IXYS CORPORATION, All Rights Reserved
IXFA18N60X IXFP18N60X
IXFH18N60X
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 10V, ID = 0.5 • ID25, Note 1
Gate Input Resistance
6
10
S
RGi
3.3
Ciss
Coss
Crss
1440
1110
14
pF
pF
pF
VGS = 0V, VDS = 25V, f = 1MHz
Effective Output Capacitance
Co(er)
Co(tr)
84
pF
pF
Energy related
Time related
VGS = 0V
VDS = 0.8 • VDSS
255
td(on)
tr
td(off)
tf
20
30
63
24
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
V
RG = 10 (External)
Qg(on)
Qgs
35
8
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
18
RthJC
RthCS
0.39 C/W
TO-220
TO-247
0.50
0.21
C/W
C/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
18
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = IS, VGS = 0V, Note 1
72
1.4
V
trr
QRM
IRM
127
705
11
ns
IF = 9A, -di/dt = 100A/μs
nC
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFA18N60X IXFP18N60X
IXFH18N60X
Fig. 1. Output Characteristics @ TJ = 25ºC
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
18
16
14
12
10
8
45
40
35
30
25
20
15
10
5
V
= 10V
9V
GS
V
= 10V
GS
8V
7V
9V
8V
6
7V
6V
6V
5V
4
2
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 9A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125ºC
18
16
14
12
10
8
3.8
3.4
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
V
= 10V
8V
GS
V
= 10V
GS
7V
I
= 18A
D
I
= 9A
D
6V
5V
6
4
2
0
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
10
11
TJ - Degrees Centigrade
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 9A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
4.5
V
= 10V
GS
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
T = 125ºC
J
BV
DSS
T = 25ºC
J
V
GS(th)
0
5
10
15
20
25
30
35
40
45
-60
-40
-20
0
20
40
60
80
100
120
140
160
TJ - Degrees Centigrade
ID - Amperes
© 2015 IXYS CORPORATION, All Rights Reserved
IXFA18N60X IXFP18N60X
IXFH18N60X
Fig. 7. Maximum Drain Current vs.
Case Temperature
Fig. 8. Input Admittance
20
16
12
8
25
20
15
10
5
T
J
= 125ºC
25ºC
- 40ºC
4
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
VGS - Volts
Fig. 9. Transconductance
Fig. 10. Forward Voltage Drop of Intrinsic Diode
20
18
16
14
12
10
8
60
50
40
30
20
10
0
T
J
= - 40ºC
25ºC
125ºC
T
J
= 125ºC
6
T
J
= 25ºC
4
2
0
0
4
8
12
16
20
24
28
32
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
ID - Amperes
VSD - Volts
Fig. 12. Capacitance
Fig. 11. Gate Charge
10
8
10,000
1,000
100
10
V
= 300V
DS
C
C
iss
I
I
= 9A
D
G
= 10mA
6
oss
4
2
C
rss
= 1 MHz
f
1
0
1
10
100
1000
0
5
10
15
20
25
30
35
VDS - Volts
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA18N60X IXFP18N60X
IXFH18N60X
Fig. 14. Forward-Bias Safe Operating Area
Fig. 13. Output Capacitance Stored Energy
100
10
14
12
10
8
R ) Limit
DS(on
25µs
100µs
1
6
1ms
4
0.1
0.01
T
= 150ºC
= 25ºC
J
10ms
DC
T
C
2
Single Pulse
0
0
100
200
300
400
500
600
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2015 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_18N60X(J4-R4T45) 5-20-15-A
IXFA18N60X IXFP18N60X
IXFH18N60X
TO-220 Outline
TO-247 Outline
TO-263 Outline
Pins:
1 - Gate
2 - Drain
3 - Source
1. Gate
2,4. Drain
3. Source
1 - Gate
2,4 - Drain
3 - Source
Dim.
Millimeter
Inches
Min. Max.
Min.
Max.
A
b
b2
4.06
0.51
1.14
4.83
0.99
1.40
.160
.020
.045
.190
.039
.055
c
c2
0.40
1.14
0.74
1.40
.016
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.280
.380
.320
E
9.65
10.41
.380
.405
E1
e
L
L1
L2
L3
L4
6.22
2.54
14.61
2.29
1.02
1.27
0
8.13
BSC
15.88
2.79
1.40
1.78
0.13
.270
.100 BSC
.320
.575
.090
.040
.050
0
.625
.110
.055
.070
.005
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
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