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IXFH20N50P3 [IXYS]

Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN;
IXFH20N50P3
型号： IXFH20N50P3
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN

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Preliminary Technical Information  
Polar3TM HiperFETTM  
Power MOSFETs  
VDSS = 500V  
ID25 = 20A  
RDS(on) 300m  
IXFA20N50P3  
IXFP20N50P3  
IXFQ20N50P3  
IXFH20N50P3  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-220AB (IXFP)  
Fast Intrinsic Rectifier  
TO-263 AA (IXFA)  
G
G
S
D
D (Tab)  
S
TO-3P (IXFQ)  
D (Tab)  
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
G
D
S
TJ = 25C to 150C  
TJ = 25C to 150C, RGS = 1M  
500  
500  
V
V
VDGR  
D (Tab)  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
TO-247 (IXFH)  
ID25  
IDM  
TC = 25C  
TC = 25C, Pulse Width Limited by TJM  
20  
40  
A
A
IA  
TC = 25C  
TC = 25C  
10  
A
G
D
S
EAS  
300  
mJ  
D (Tab)  
D = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25C  
35  
V/ns  
W
380  
G = Gate  
S = Source  
Tab = Drain  
TJ  
-55 ... +150  
150  
C  
C  
C  
TJM  
Tstg  
Features  
-55 ... +150  
Fast Intrinsic Rectifier  
Avalanche Rated  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Low RDS(ON) and QG  
FC  
Md  
Mounting Force  
Mounting Torque  
10..65/2.2..14.6  
1.13 / 10  
N/lb  
Nm/lb.in  
Low Package Inductance  
Weight  
TO-263  
TO-220  
TO-3P  
2.5  
3.0  
5.5  
6.0  
g
g
g
g
Advantages  
TO-247  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
500  
3.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 1.5mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
5.0  
Switch-Mode and Resonant-Mode  
Power Supplies  
DC-DC Converters  
          100 nA  
IDSS  
25 A  
Laser Drivers  
AC and DC Motor Drives  
Robotics and Servo Controls  
TJ = 125C  
1.25 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
300 m  
DS100414A(11/13)  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXFA20N50P3 IXFA20N50P3  
IXFQ20N50P3 IXFH20N50P3  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
11  
18  
S
Ciss  
Coss  
Crss  
1800  
230  
8.3  
pF  
pF  
pF  
RGi  
2.3  
td(on)  
tr  
td(off)  
tf  
10  
5
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 5(External)  
43  
9
Qg(on)  
Qgs  
36  
7
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
13  
RthJC  
RthCS  
0.36 C/W  
C/W  
TO-220  
TO-247 & TO-3P  
0.50  
0.25 C/W  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
20  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
80  
1.4  
250  
trr  
ns  
A
IF = 10A, -di/dt = 100A/s  
IRM  
QRM  
8.0  
0.6  
VR = 100V, VGS = 0V  
μC  
Note  
1. Pulse test, t 300s, duty cycle, d 2%.  
PRELIMANARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXFA20N50P3 IXFA20N50P3  
IXFQ20N50P3 IXFH20N50P3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
45  
40  
35  
30  
25  
20  
15  
10  
5
20  
18  
16  
14  
12  
10  
8
VGS = 10V  
7V  
VGS = 10V  
8V  
6V  
7V  
6V  
5.5V  
5V  
6
4
5V  
2
0
0
0
0
0
1
2
3
4
5
6
7
16  
45  
0
5
10  
15  
20  
25  
30  
150  
150  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 10A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125ºC  
20  
18  
16  
14  
12  
10  
8
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
VGS = 10V  
7V  
VGS = 10V  
6V  
5V  
I D = 20A  
I D = 10A  
6
4.5V  
4V  
4
2
0
2
4
6
8
10  
12  
14  
-50  
-25  
0
25  
50  
75  
100  
125  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 5. RDS(on) Normalized to ID = 10A Value vs.  
Drain Current  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
24  
20  
16  
12  
8
3.8  
3.4  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
VGS = 10V  
TJ = 125ºC  
TJ = 25ºC  
4
0
5
10  
15  
20  
25  
30  
35  
40  
-50  
-25  
0
25  
50  
75  
100  
125  
ID - Amperes  
TC - Degrees Centigrade  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXFA20N50P3 IXFA20N50P3  
IXFQ20N50P3 IXFH20N50P3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
20  
18  
16  
14  
12  
10  
8
30  
25  
20  
15  
10  
5
TJ = - 40ºC  
25ºC  
125ºC  
TJ = 125ºC  
25ºC  
- 40ºC  
6
4
2
0
0
0
2
4
6
8
10  
12  
14  
16  
18  
20  
22  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
ID - Amperes  
VGS - Volts  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
60  
50  
40  
30  
20  
10  
0
10  
9
8
7
6
5
4
3
2
1
0
VDS = 250V  
I D = 10A  
I G = 10mA  
TJ = 125ºC  
TJ = 25ºC  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
5
10  
15  
20  
25  
30  
35  
40  
VSD - Volts  
QG - NanoCoulombs  
Fig. 11. Capacitance  
Fig. 12. Forward-Bias Safe Operating Area  
100  
10  
1
10,000  
1,000  
100  
10  
RDS(on) Limit  
100µs  
C
C
iss  
oss  
TJ = 150ºC  
1ms  
TC = 25ºC  
C
rss  
Single Pulse  
= 1 MHz  
5
f
1
0.1  
0
10  
15  
20  
25  
30  
35  
40  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFA20N50P3 IXFA20N50P3  
IXFQ20N50P3 IXFH20N50P3  
Fig. 13. Maximum Transient Thermal Impedance  
1
0.1  
0.01  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2013 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_20N50P3(W5) 11-14-11  
IXFA20N50P3 IXFA20N50P3  
IXFQ20N50P3 IXFH20N50P3  
TO-3P Outline  
TO-263 Outline  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
A
b
b2  
4.06  
0.51  
1.14  
4.83  
0.99  
1.40  
.160  
.020  
.045  
.190  
.039  
.055  
c
c2  
0.40  
1.14  
0.74  
1.40  
.016  
.045  
.029  
.055  
1. Gate  
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.280  
.380  
.320  
2. Drain  
3. Source  
4. Drain  
E
9.65  
10.41  
.380  
.405  
E1  
e
L
L1  
L2  
L3  
L4  
6.22  
2.54  
14.61  
2.29  
1.02  
1.27  
0
8.13  
BSC  
15.88  
2.79  
1.40  
1.78  
0.13  
.270  
.100 BSC  
.320  
1. Gate  
2. Drain  
3. Source  
4. Drain  
.575  
.090  
.040  
.050  
0
.625  
.110  
.055  
.070  
.005  
TO-247 Outline  
P  
TO-220 Outline  
1
2
3
Pins:  
e
1 - Gate  
Terminals: 1 - Gate  
2 - Drain  
2 - Drain  
3 - Source  
3 - Source  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.7  
2.2  
2.2  
5.3  
2.54  
2.6  
.185 .209  
.087 .102  
.059 .098  
b
b1  
b2  
1.0  
1.65  
2.87  
1.4  
2.13  
3.12  
.040 .055  
.065 .084  
.113 .123  
C
D
E
.4  
.8  
.016 .031  
.819 .845  
.610 .640  
20.80 21.46  
15.75 16.26  
e
5.20  
5.72 0.205 0.225  
L
L1  
19.81 20.32  
4.50  
.780 .800  
.177  
P 3.55  
3.65  
.140 .144  
Q
5.89  
6.40 0.232 0.252  
R
S
4.32  
6.15 BSC  
5.49  
.170 .216  
242 BSC  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  

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