IXFH16N90Q [IXYS]
HiPerFET Power MOSFETs Q-Class; HiPerFET功率MOSFET Q系列
| 型号： | IXFH16N90Q |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs Q-Class |
| 文件： | 总2页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advanced Technical Information
HiPerFETTM
Power MOSFETs
Q-Class
IXFH 16N90Q
IXFK 16N90Q
IXFT 16N90Q
VDSS
ID25
= 900 V
16 A
=
RDS(on) = 0.65 W
trr £ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Symbol
TestConditions
Maximum Ratings
TO-247AD(IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
900
900
V
V
(TAB)
VGS
VGSM
Continuous
Transient
±20
±30
V
V
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
16
64
16
A
A
A
TO-268 (D3) ( IXFT)
G
EAR
EAS
TC = 25°C
TC = 25°C
45
1.5
mJ
J
S
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
5
V/ns
TO-264AA(IXFK
PD
TC = 25°C
360
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G
D
S
D (TAB)
TL
1.6 mm (0.063 in) from case for 10 s
Mountingtorque
300
°C
G = Gate
Md
TO-247
TO-264
1.13/10 Nm/lb.in.
0.9/6 Nm/lb.in.
S = Source
TAB = Drain
Weight
Symbol
TO-247
TO-268
TO-264
6
4
10
g
g
g
Features
• IXYS advanced low Qg process
• Internationalstandardpackages
• EpoxymeetUL94V-0,flammability
classification
• Low RDS (on) low Qg
• Avalanche energy and current rated
• Fast intrinsic rectifier
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS
VGS = 0 V, ID = 250 mA
900
3.0
V
V
VGS(th)
VDS = VGS, ID = 4 mA
5.0
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
50 mA
Advantages
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
2
mA
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t £ 300 ms, duty cycle d £ 2 %
0.65
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98668(11/99)
1 - 2
IXFH 16N90Q IXFK 16N90Q
IXFT 16N90Q
Symbol
gfs
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
TO-247 AD (IXFH) Outline
min. typ. max.
VDS = 10 V; ID = 0.5 • ID25, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
10
17
S
Ciss
Coss
Crss
4000
430
pF
pF
pF
155
Dim. Millimeter
Inches
td(on)
tr
td(off)
tf
21
24
56
14
ns
ns
ns
ns
Min. Max. Min. Max.
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
RG = 2.0 W (External),
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
E
F
4.32 5.49 0.170 0.216
Qg(on)
Qgs
133 170
nC
nC
nC
5.4
6.2 0.212 0.244
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
25
67
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
Qgd
J
1.0
1.4 0.040 0.055
K
10.8 11.0 0.426 0.433
RthJC
RthCK
0.35 K/W
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
TO-247
TO-264
0.25
0.15
K/W
K/W
N
1.5 2.49 0.087 0.102
TO-264 AA (IXFK) Outline
Source-DrainDiode
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Symbol
IS
TestConditions
min.
typ. max.
VGS = 0 V
16
A
A
ISM
Repetitive; pulse width limited by TJM
60
VSD
IF = IS, VGS = 0 V,
1.5
V
Dim.
Millimeter
Inches
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Min.
Max.
Min.
Max.
A
A1
A2
b
b1
b2
4.82
2.54
2.00
1.12
2.39
2.90
5.13
2.89
2.10
1.42
2.69
3.09
.190
.100
.079
.044
.094
.114
.202
.114
.083
.056
.106
.122
trr
QRM
IRM
250
ns
mC
A
1
8
IF = IS -di/dt = 100 A/ms, VR = 100 V
c
D
E
e
0.53
25.91 26.16
19.81 19.96
5.46 BSC
0.83
.021
1.020
.780
.033
1.030
.786
.215 BSC
J
K
0.00
0.00
0.25
0.25
.000
.000
.010
.010
TO-268AA (IXFT) (D3 PAK)
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
L
L1
20.32 20.83
.800
.090
.820
.102
2.29
2.59
P
Q
Q1
R
3.17
6.07
8.38
3.81
1.78
3.66
6.27
8.69
4.32
2.29
.125
.239
.330
.150
.070
.144
.247
.342
.170
.090
A
A1
A2
4.9
2.7
.02
5.1
2.9
.25
.193 .201
.106 .114
.001 .010
b
b2
C
1.15
1.9
.4
1.45
2.1
.65
.045 .057
R1
.75
.83
S
T
6.04
1.57
6.30
1.83
.238
.062
.248
.072
.016 .026
D
E
E1
13.80 14.00
15.85 16.05
.543 .551
.624 .632
.524 .535
Min. Recommended Footprint
13.3
5.45 BSC
18.70 19.10
13.6
e
H
L
.215 BSC
.736 .752
.094 .106
2.40
2.70
L1
L2
L3
L4
1.20
1.00
0.25 BSC
1.40
1.15
.047 .055
.039 .045
.010 BSC
3.80
4.10
.150 .161
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
© 2000 IXYS All rights reserved
2 - 2
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