IXFH180N20X3 [LITTELFUSE]
Power Field-Effect Transistor,;
| 型号： | IXFH180N20X3 |
| 厂家： | 
LITTELFUSE |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preliminary Technical Information
X3-Class HiPerFETTM
Power MOSFET
VDSS = 200V
ID25 = 180A
RDS(on) 7.5m
IXFT180N20X3HV
IXFH180N20X3
N-Channel Enhancement Mode
Avalanche Rated
TO-268HV
(IXFT..HV)
G
Symbol
VDSS
Test Conditions
Maximum Ratings
S
TJ = 25C to 150C
200
200
V
V
D (Tab)
VDGR
TJ = 25C to 150C, RGS = 1M
TO-247
(IXFH)
VGSS
VGSM
Continuous
Transient
20
30
V
V
ID25
IL(RMS)
IDM
TC = 25C
External Lead Current Limit
TC = 25C, Pulse Width Limited by TJM
180
160
320
A
A
A
G
D
S
D (Tab)
D = Drain
IA
TC = 25C
TC = 25C
90
A
J
EAS
2.2
G = Gate
S = Source
Tab = Drain
dv/dt
PD
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
20
V/ns
W
735
TJ
-55 ... +150
150
C
C
C
TJM
Tstg
Features
-55 ... +150
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
International Standard Packages
Low RDS(ON) and QG
Avalanche Rated
Md
Mounting Torque (TO-247)
1.13 / 10
Nm/lb.in
Low Package Inductance
Weight
TO-268HV
TO-247
4
6
g
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max.
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 1mA
VDS = VGS, ID = 4mA
VGS = 20V, VDS = 0V
VDS = VDSS, VGS = 0V
200
V
V
Applications
2.5
4.5
Switch-Mode and Resonant-Mode
100 nA
Power Supplies
DC-DC Converters
PFC Circuits
AC and DC Motor Drives
IDSS
25 A
1 mA
TJ = 125C
Robotics and Servo Controls
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
6.3
7.5 m
DS100842C(11/17)
© 2017 IXYS CORPORATION, All Rights Reserved.
IXFT180N20X3HV
IXFH180N20X3
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
gfs
VDS = 10V, ID = 60A, Note 1
Gate Input Resistance
70
120
S
RGi
1.5
Ciss
Coss
Crss
10.3
1.7
nF
nF
pF
VGS = 0V, VDS = 25V, f = 1MHz
5.2
Effective Output Capacitance
Co(er)
Co(tr)
810
pF
pF
Energy related
Time related
VGS = 0V
DS = 0.8 • VDSS
2540
V
td(on)
tr
td(off)
tf
30
28
ns
ns
ns
ns
Resistive Switching Times
GS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
V
100
12
RG = 5 (External)
Qg(on)
Qgs
154
50
nC
nC
nC
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgd
45
RthJC
RthCS
0.17 C/W
C/W
TO-247
0.21
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25C, Unless Otherwise Specified)
Min.
Typ.
Max
IS
VGS = 0V
180
A
A
ISM
VSD
Repetitive, pulse Width Limited by TJM
IF = 100A, VGS = 0V, Note 1
720
1.4
V
trr
QRM
IRM
120
550
9
ns
IF = 90A, -di/dt = 100A/μs
nC
VR = 100V
A
Note 1. Pulse test, t 300s, duty cycle, d 2%.
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from a subjective evaluation of the design, based upon prior knowledge and experi-
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right
to change limits, test conditions, and dimensions without notice.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
4,835,592 4,931,844
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344
6,710,405B2 6,759,692
6,710,463
6,727,585
7,005,734B2 7,157,338B2
7,063,975B2
6,771,478B2 7,071,537
IXFT180N20X3HV
IXFH180N20X3
Fig. 2. Extended Output Characteristics @ TJ = 25oC
Fig. 1. Output Characteristics @ TJ = 25oC
180
160
140
120
100
80
600
500
400
300
200
100
0
V
= 10V
8V
V
= 10V
GS
GS
7V
6V
5V
9V
8V
7V
60
6V
5V
40
20
0
0
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
5
10
15
20
25
30
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 90A Value vs.
Junction Temperature
Fig. 3. Output Characteristics @ TJ = 125oC
180
160
140
120
100
80
2.8
2.4
2.0
1.6
1.2
0.8
0.4
V
= 10V
8V
GS
V
= 10V
GS
7V
6V
I
= 180A
D
I
= 90A
D
60
5V
4V
40
20
0
-50
-25
0
25
50
75
100
125
150
0.5
1
1.5
2
2.5
3
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 90A Value vs.
Drain Current
Fig. 6. Normalized Breakdown & Threshold Voltages
vs. Junction Temperature
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
V
= 10V
GS
BV
DSS
o
T = 125 C
J
o
T = 25 C
J
V
GS(th)
100
-60
-40
-20
0
20
40
60
80
120
140
160
100
200
300
400
500
600
TJ - Degrees Centigrade
ID - Amperes
© 2017 IXYS CORPORATION, All Rights Reserved.
IXFT180N20X3HV
IXFH180N20X3
Fig. 7. Maximum Drain Current vs. Case Temperature
Fig. 8. Input Admittance
240
200
160
120
80
180
160
140
120
100
80
V
= 10V
DS
External Lead Current Limit
o
T
J
= 125 C
60
o
25 C
o
- 40 C
40
40
20
0
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
VGS - Volts
Fig. 9. Transconductance
Fig. 10. Forward Voltage Drop of Intrinsic Diode
250
200
150
100
50
500
400
300
200
100
0
o
T
J
= - 40 C
V
= 10V
DS
o
25 C
o
125 C
o
T = 125 C
J
o
T
J
= 25 C
0
0
40
80
120
160
200
240
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD - Volts
ID - Amperes
Fig. 12. Capacitance
Fig. 11. Gate Charge
100,000
10,000
1,000
100
10
9
8
7
6
5
4
3
2
1
0
V
= 100V
DS
I
I
= 90A
D
G
C
iss
= 10mA
C
C
oss
rss
10
= 1 MHz
f
1
0
20
40
60
80
100
120
140
160
1
10
100
1,000
VDS - Volts
QG - NanoCoulombs
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFT180N20X3HV
IXFH180N20X3
Fig. 13. Output Capacitance Stored Energy
Fig. 14. Forward-Bias Safe Operating Area
1000
100
10
16
14
12
10
R
Limit
)
DS(
on
25μs
100μs
8
6
4
2
0
1ms
1
o
T = 150 C
J
10ms
DC
o
T
= 25 C
C
Single Pulse
0.1
0
50
100
150
200
1
10
100
1,000
VDS - Volts
VDS - Volts
Fig. 15. Maximum Transient Thermal Impedance
aaaaa
0.3
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Second
© 2017 IXYS CORPORATION, All Rights Reserved.
IXYS REF: F_180N20X3 (27-S202) 6-15-17
IXFT180N20X3HV
IXFH180N20X3
TO-268HV Outline
PINS:
1 - Gate 2 - Source
3 - Drain
TO-247 Outline
D
A
A
0P
+
B
O 0K M D B M
E
A2
A2
Q
S
D2
+
+
R
D1
D
0P1
4
1
2
3
ixys option
C
L1
E1
L
A1
b
b2
c
b4
PINS: 1 - Gate
e
+
O
2, 4 - Drain
3 - Source
J
M
C
A M
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.
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