IXFH18N60P [IXYS]
PolarHV HiPerFET Power MOSFET; PolarHV HiPerFET功率MOSFET
| 型号： | IXFH18N60P |
| 厂家： | 
IXYS CORPORATION |
| 描述： | PolarHV HiPerFET Power MOSFET |
| 文件： | 总5页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PolarHVTM HiPerFET
Power MOSFET
IXFH 18N60P
IXFV 18N60P
IXFV 18N60PS
VDSS = 600 V
ID25 = 18
RDS(on) ≤ 400 mΩ
≤ 200 ns
A
N-Channel Enhancement Mode
Fast Intrinsic Diode
trr
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-247 AD (IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
600
600
V
TJ = 25°C to 150°C; RGS = 1 MΩ
V
VGS
Continuous
Tranisent
30
40
V
V
VGSM
D (TAB)
ID25
IDM
TC = 25°C
18
45
A
A
TC = 25°C, pulse width limited by TJM
PLUS220 (IXFV)
IAR
TC = 25°C
18
A
EAR
EAS
TC = 25°C
TC = 25°C
30
mJ
J
1.0
G
dv/dt
PD
IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 5 Ω
,
10
V/ns
D (TAB)
D
S
TC = 25°C
360
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
PLUS220SMD (IXFV...S)
TL
TSOLD
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
300
260
°C
°C
G
S
Md
Mounting torque
TO-247
(TO-247)
1.13/10 Nm/lb.in.
D (TAB)
Weight
6
4
g
g
PLUS220 & PLUS220SMD
G = Gate
D = Drain
S = Source
TAB = Drain
Symbol
Test Conditions
Characteristic Values
Features
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
l
International standard packages
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
BVDSS
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
VDS = VGS, ID = 2.5 mA
VGS = 30 V, VDS = 0 V
600
V
V
l
3.0
5.5
l
100
nA
IDSS
VDS = VDSS
VGS = 0 V
25
250
μA
μA
TJ = 125°C
Advantages
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
400 mΩ
l
Easy to mount
Space savings
High power density
l
l
DS99390E(03/06)
© 2006 IXYS All rights reserved
IXFH 18N60P
IXFV 18N60P IXFV 18N60PS
Symbol
gfs
Test Conditions
Characteristic Values
TO-247 (IXFH) Outline
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VDS = 20 V; ID = 0.5 ID25, Note 1
VGS = 0 V, VDS = 25 V, f = 1 MHz
9
16
S
Ciss
Coss
Crss
2500
280
23
pF
pF
pF
1
2
3
td(on)
tr
td(off)
tf
21
22
62
22
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = ID25
Terminals: 1 - Gate
3 - Source
2 - Drain
Tab - Drain
RG = 5 Ω (External)
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
Qg(on)
Qgs
50
15
18
nC
nC
nC
A
A1
A2
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
b
b1
b2
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
RthJC
RthCS
0.35 °C/W
°C/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
(TO-247, PLUS220)
0.21
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
L1
19.81 20.32
4.50
.780 .800
.177
Source-Drain Diode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
∅P 3.55
Q
3.65
.140 .144
Symbol
IS
Test Conditions
5.89
6.40 0.232 0.252
R
S
4.32
5.49
.170 .216
242 BSC
VGS = 0 V
18
54
A
6.15 BSC
ISM
Repetitive
A
V
PLUS220 (IXFV) Outline
VSD
IF = IS, VGS = 0 V, Note 1
1.5
200
trr
IS = 18 A, -di/dt = 100 A/μs
ns
μC
A
QRM
FRM
VR = 100 V, VGS = 0 V
0.8
5
Note 1: Pulse test, t ≤ 300 μs, duty cycled ≤ 2 %
PLUS220SMD (IXFV_S) Outline
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1 6,683,344
6,534,343
6,583,505
6,727,585
6,710,405B2 6,759,692
6,710,463 6,771,478 B2
IXFH 18N60P
IXFV 18N60P IXFV 18N60PS
Fig. 1. Output Characteristics
@ 25ºC
Fig. 2. Extended Output Characteristics
@ 25ºC
18
16
14
12
10
8
40
35
30
25
20
15
10
5
V
= 10V
GS
V
= 10V
8V
GS
8V
7V
7V
6V
6V
6
4
5V
2
5V
15
0
0
0
1
2
3
4
5
6
7
8
0
3
6
9
12
18
21
24
27
30
150
150
VDS - Volts
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 9A Value vs.
Junction Temperature
Fig. 3. Output Characteristics
@ 125ºC
18
16
14
12
10
8
3.2
2.8
2.4
2
V
= 10V
7V
GS
V
= 10V
GS
6V
5V
I
= 18A
D
I
= 9A
1.6
1.2
0.8
0.4
D
6
4
2
0
0
2
4
6
8
10
12
14
16
18
-50
-25
0
25
50
75
100
125
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 9A Value vs.
Drain Current
Fig. 6. Maximum Drain Current vs.
Case Temperature
20
18
16
14
12
10
8
3.2
3
V
= 10V
GS
T
J
= 125ºC
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
6
T
J
= 25ºC
4
2
0.8
0
0
5
10
15
20
25
30
35
40
45
-50
-25
0
25
50
75
100
125
TC - Degrees Centigrade
ID - Amperes
© 2006 IXYS All rights reserved
IXFH 18N60P
IXFV 18N60P IXFV 18N60PS
Fig. 8. Transconductance
Fig. 7. Input Admittance
40
35
30
25
20
15
10
5
24
20
16
12
8
T
J
= - 40ºC
25ºC
125ºC
T
J
= 125ºC
25ºC
- 40ºC
4
0
0
3.5
4
4.5
5
5.5
6
6.5
7
1.1
40
0
5
10
15
20
25
30
35
40
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
Fig. 10. Gate Charge
10
9
8
7
6
5
4
3
2
1
0
70
V
= 300V
DS
60
50
40
30
20
10
0
I
I
= 9A
D
G
= 10mA
T
= 125ºC
J
T
J
= 25ºC
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
5
10
15
20
25
30
35
40
45
50
VSD - Volts
QG - NanoCoulombs
Fig. 12. Forward-Bias Safe Operating Area
Fig. 11. Capacitance
10,000
1,000
100
100
f = 1 MHz
C
iss
R
Limits
DS(on)
25µs
C
oss
rss
100µs
10
1ms
10ms
C
T
= 150ºC
J
DC
T
C
= 25ºC
10
1
0
5
10
15
20
25
30
35
10
100
1000
VDS - Volts
VDS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFH 18N60P
IXFV 18N60P IXFV 18N60PS
Fig. 13. Maximum Transient Thermal Resistance
1.000
0.100
0.010
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2006 IXYS All rights reserved
相关型号：
IXFH20N50P3
Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
IXYS
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