IXFH17N80Q [IXYS]
HiPerFET Power MOSFETs Q-Class; HiPerFET功率MOSFET Q系列
| 型号： | IXFH17N80Q |
| 厂家： | 
IXYS CORPORATION |
| 描述： | HiPerFET Power MOSFETs Q-Class |
| 文件： | 总4页 (文件大小：563K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HiPerFETTM
PowerMOSFETs
Q-Class
IXFH 17N80Q VDSS
IXFT 17N80Q ID25
= 800 V
17 A
= 0.60 Ω
=
RDS(on)
trr ≤ 250 ns
N-ChannelEnhancementMode
AvalancheRated, Highdv/dt, LowQg
Preliminary Data Sheet
TO-268 (D3) (IXFT) Case Style
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
T
= 25°C to 150°C
800
800
V
V
TJJ = 25°C to 150°C; RGS = 1 MΩ
VGS
VGSM
Continuous
Transient
20
30
V
V
G
(TAB)
S
ID25
IDM
IAR
TC = 25°C
17
68
17
A
A
A
TC = 25°C, pulse width limited by TJM
TC = 25°C
TO-247AD(IXFH)
EAR
EAS
TC = 25°C
TC = 25°C
30
mJ
J
1.0
(TAB)
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
5
V/ns
PD
TC = 25°C
400
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G = Gate
S = Source
D = Drain
TAB = Drain
TL
1.6 mm (0.062 in.) from case for 10 s
Mounting torque
300
°C
Md
1.13/10 Nm/lb.in.
Features
Weight
TO-247
TO-268
6
4
g
g
z
IXYS advanced low Qg process
International standard packages
Low RDS (on)
Unclamped Inductive Switching (UIS)
rated
Fast switching
Molding epoxies meet UL 94 V-0
z
z
z
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ.
Max.
z
z
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 4 mA
VGS = 20 VDC, VDS = 0
800
V
V
flammability classification
2.0
4.5
100 nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
25 µA
1
mA
z
Easy to mount
Space savings
z
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
0.60
Ω
z
High power density
© 2003 IXYS All rights reserved
DS99058A(06/03)
IXFH 17N80Q
IXFT 17N80Q
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
TO-247 AD Outline
VDS = 10 V; ID = 0.5 ID25, pulse test
9
17
S
Ciss
Coss
Crss
3600
350
pF
pF
pF
1
2
3
VGS = 0 V, VDS = 25 V, f = 1 MHz
100
td(on)
tr
td(off)
tf
18
27
53
16
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Terminals: 1 - Gate
3 - Source
2 - Drain
RG = 1.5 Ω (External)
Tab - Drain
Dim.
Millimeter
Min.
Inches
Min. Max.
Max.
Qg(on)
Qgs
95
20
40
nC
nC
nC
A
A12
4.7
2.2
2.2
5.3
2.54
2.6
.185 .209
.087 .102
.059 .098
A
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Qgd
b
b12
1.0
1.65
2.87
1.4
2.13
3.12
.040 .055
.065 .084
.113 .123
b
RthJC
RthCK
0.31
K/W
K/W
C
D
E
.4
.8
.016 .031
.819 .845
.610 .640
(TO-247)
0.25
20.80 21.46
15.75 16.26
e
5.20
5.72 0.205 0.225
L
19.81 20.32
4.50
.780 .800
.177
L1
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
∅P 3.55
3.65
.140 .144
Q
5.89
4.32
6.40 0.232 0.252
Symbol
IS
TestConditions
R
S
5.49
.170 .216
242 BSC
6.15 BSC
VGS = 0 V
15
60
A
ISM
Repetitive;
A
V
TO-268 Outline
VSD
IF = IS, VGS = 0 V,
1.5
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
QRM
250
ns
µC
A
IF = IS-di/dt = 100 A/µs, VR = 100 V
0.85
8
IRM
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
IXFH 17N80Q
IXFT 17N80Q
Fig. 1. Output Characteristics
@ 25 Deg. C
Fig. 2. Extended Output Characteristics
@ 25 deg. C
18
16
14
12
10
8
35
30
25
20
15
10
5
VGS = 10V
7V
VGS = 10V
6V
6V
5V
5V
6
4
2
0
0
0
0
0
2
4
6
8
10
12
30
35
0
5
10
15
20
25
30
VD S - Volts
VD S - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C
Fig. 4. RDS(on) Normalized to ID25 Value vs.
Junction Temperature
18
16
14
12
10
8
3.1
2.8
2.5
2.2
1.9
1.6
1.3
1
VGS = 10V
6V
VGS = 10V
5V
ID = 17A
ID = 8.5A
6
4
2
0.7
0.4
0
5
10
15
20
25
-50
-25
0
25
50
75
100 125 150
VD S - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
Fig. 6. Drain Current vs. Case
Temperature
2.8
2.5
2.2
1.9
1.6
1.3
1
18
16
14
12
10
8
VGS = 10V
TJ = 125ºC
6
4
TJ = 25ºC
2
0.7
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100 125 150
I D - Amperes
TC - Degrees Centigrade
© 2003 IXYS All rights reserved
IXFH 17N80Q
IXFT 17N80Q
Fig. 8. Transconductance
Fig. 7. Input Admittance
25
20
15
10
5
40
35
30
25
20
15
10
5
TJ = -40ºC
25ºC
125ºC
TJ = 120ºC
25ºC
-40ºC
0
0
3
3.5
4
4.5
5
5.5
6
0
5
10
15
20
25
30
35
40
VG S - Volts
I D - Amperes
Fig. 9. Source Current vs. Source-To-
Drain Voltage
Fig. 10. Gate Charge
50
40
30
20
10
0
10
8
VDS = 400V
ID = 8.5A
IG = 10mA
6
TJ = 125ºC
4
TJ = 25ºC
2
0
0
20
40
60
80
100
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
Q G - nanoCoulombs
VS D - Volts
Fig. 12. Maximum Transient Thermal
Resistance
Fig. 11. Capacitance
10000
1000
100
1
f = 1MHz
C
iss
C
C
oss
rss
0.1
10
0.01
0
5
10
15
20
25
30
35
40
1
10
100
1000
VDS - Volts
Pulse Width - milliseconds
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
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Power Field-Effect Transistor, 20A I(D), 500V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
IXYS
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