IRG6S320UTRL [INFINEON]
Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3;
| 型号： | IRG6S320UTRL |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 42A I(C), 330V V(BR)CES, N-Channel, TO-263AB, PLASTIC, D2PAK-3 栅 功率控制 晶体管 |
| 文件： | 总8页 (文件大小：286K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96218A
IRG6S320UPbF
Key Parameters
PDP TRENCH IGBT
Features
VCE min
330
1.45
160
150
V
l
Advanced Trench IGBT Technology
l
Optimized for Sustain and Energy Recovery
circuits in PDP applications
Low VCE(on) and Energy per Pulse (EPULSE
for improved panel efficiency
V
CE(ON) typ. @ IC = 24A
V
I
RP max @ TC= 25°C
A
TM
l
)
TJ max
°C
l
l
High repetitive peak current capability
Lead Free package
C
C
E
G
G
D2Pak
E
IRG6S320UPbF
n-channel
G
C
E
Gate
Collector
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trenchIGBTtechnologytoachievelowVCE(on)andlowEPULSETM ratingpersiliconareawhichimprovepanel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGE
±30
Gate-to-Emitter Voltage
V
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current
50
25
A
W
160
114
Power Dissipation
45
Power Dissipation
0.91
Linear Derating Factor
W/°C
°C
TJ
-40 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
300
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
Junction-to-Case
–––
1.1
°C/W
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1
09/11/09
IRG6S320UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 500µA
Parameter
Min. Typ. Max. Units
BVCES
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Breakdown Voltage Temp. Coefficient
330 ––– –––
30 ––– –––
V
V
VGE = 0V, ICE = 1 A
V(BR)ECS
Reference to 25°C, ICE = 1mA
VGE = 15V, ICE = 12A
∆ΒVCES/∆TJ
––– 0.30 ––– V/°C
––– 1.20 –––
VGE = 15V, ICE = 24A
––– 1.45 1.65
VCE(on)
VGE = 15V, ICE = 48A
Static Collector-to-Emitter Voltage
1.95 –––
––– 2.20 –––
––– 2.26 –––
V
VGE = 15V, ICE = 60A
VGE = 15V, ICE = 48A, TJ = 150°C
VCE = VGE, ICE = 250µA
VGE(th)
Gate Threshold Voltage
2.6
––– 5.0
V
∆
ICES
∆
VGE(th)/ TJ
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
––– -10 ––– mV/°C
VCE = 330V, VGE = 0V
–––
–––
1.0
10
V
CE = 330V, VGE = 0V, TJ = 100°C
CE = 330V, VGE = 0V, TJ = 125°C
5.0 –––
µA
nA
V
20
75
100
–––
VCE = 330V, VGE = 0V, TJ = 150°C
VGE = 30V
–––
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
––– ––– 100
––– ––– -100
VGE = -30V
VCE = 25V, ICE = 12A
VCE = 200V, IC = 12A, VGE = 15V
gfe
Qg
Qgc
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
–––
28
46
–––
–––
S
nC
7.7 –––
IC = 12A, VCC = 196V
24
20
89
70
23
52
–––
–––
–––
–––
–––
–––
Ω
RG = 10 , L=210µH, LS= 150nH
ns
ns
td(off)
tf
td(on)
tr
td(off)
tf
TJ = 25°C
Turn-Off delay time
Fall time
IC = 12A, VCC = 196V
RG = 10Ω, L=200µH, LS= 150nH
TJ = 150°C
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
––– 130 –––
––– 140 –––
100 ––– –––
V
CC = 240V, VGE = 15V, RG= 5.1Ω
L = 220nH, C= 0.10µF, VGE = 15V
Ω,
tst
Shoot Through Blocking Time
ns
µJ
––– 240 –––
––– 280 –––
EPULSE
VCC = 240V, RG= 5.1
TJ = 25°C
Energy per Pulse
L = 220nH, C= 0.10µF, VGE = 15V
Ω,
VCC = 240V, RG= 5.1
Class 2
TJ = 100°C
Human Body Model
Machine Model
(Per JEDEC standard JESD22-A114)
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
ESD
V
GE = 0V
Cies
Coes
Cres
LC
Input Capacitance
––– 1160 –––
VCE = 30V
Output Capacitance
–––
–––
–––
61
38
–––
–––
pF
ƒ = 1.0MHz,
See Fig.13
Reverse Transfer Capacitance
Internal Collector Inductance
5.0 –––
Between lead,
nH 6mm (0.25in.)
from package
LE
Internal Emitter Inductance
–––
13 –––
and center of die contact
Packaging limitation for this device is 42A.
Notes:
Half sine wave with duty cycle <= 0.05, ton=2µsec.
Rθ is measured at TJ of approximately 90°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRG6S320UPbF
200
180
160
140
120
100
80
200
180
160
140
120
100
80
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
V
= 18V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
60
60
40
40
20
20
0
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
V
(V)
V
(V)
CE
CE
Fig 2. Typical Output Characteristics @ 75°C
Fig 1. Typical Output Characteristics @ 25°C
200
200
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
180
160
140
120
100
80
180
160
140
120
100
80
60
60
40
40
20
20
0
0
0
1
2
3
4
5
6
7
8
9
10
0
1
2
3
4
5
6
7
8
9
10
V
(V)
V
(V)
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
25
160
I
= 12A
C
T
= 25°C
140
120
100
80
J
T
= 150°C
20
15
10
5
J
T
T
= 25°C
J
J
= 150°C
60
40
20
0
0
0
5
10
15
20
2
4
6
8
10
12
14
V
, Voltage Gate-to-Emitter (V)
V
, Gate-to-Emitter Voltage (V)
GE
GE
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
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3
IRG6S320UPbF
55
50
45
40
35
30
25
20
15
10
5
160
140
120
100
80
PW= 2µs
Duty cycle <= 0.05
Half Sine Wave
60
40
20
0
0
25
50
T
75
100
125
150
25
50
75
100
125
150
, Case Temperature (°C)
C
Case Temperature (°C)
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
Fig 7. Maximum Collector Current vs. Case Temperature
3000
3000
V
= 240V
L = 220nH
CC
C = 0.4µF
2500
2500
2000
1500
1000
500
L = 220nH
C = variable
100°C
2000
100°C
25°C
1500
25°C
1000
0
500
100
120
140
160
180
200
220
180
190
200
210
220
230
240
I , Peak Collector Current (A)
V
Collector-to-Supply Voltage (V)
C
CC,
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Supply Voltage
4000
1000
V
= 240V
CC
3500
3000
2500
2000
1500
1000
500
L = 220nH
t = 1µs half sine
C= 0.4µF
100
10µsec
100µsec
10
1
1msec
C= 0.2µF
C= 0.1µF
Tc = 25°C
Tj = 150°C
Single Pulse
0
0.1
25
50
75
100
125
150
1
10
100
1000
T , Temperature (ºC)
V
(V)
J
CE
Fig 11. EPULSE vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
4
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IRG6S320UPbF
16
14
12
10
8
10000
1000
100
V
= 0V,
f = 1 MHZ
GS
I
= 12A
C
C
= C + C , C SHORTED
ies
ge gd ce
C
= C
V
V
V
= 240V
CES
res
gc
C
= C + C
ce gc
oes
= 150V
CES
Cies
= 60V
CES
6
4
Coes
Cres
2
0
10
0
50
100
150
200
0
10
Q
20
30
40
50
V
, Collector-toEmitter-Voltage(V)
, Total Gate Charge (nC)
CE
G
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.04220
0.30593
0.50336
0.25017
0.000027
0.000129
0.001257
0.007858
τ
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRG6S320UPbF
A
RG
C
PULSE A
PULSE B
DRIVER
L
VCC
B
Ipulse
DUT
RG
tST
Fig 16b. tst Test Waveforms
Fig 16a. tst and EPULSE Test Circuit
VCE
Energy
IC Current
L
VCC
DUT
0
1K
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
6
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IRG6S320UPbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRG6S320UPbF
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2009
8
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