IRG7CH35UB [INFINEON]
Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel;
| 型号： | IRG7CH35UB |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel 栅 |
| 文件： | 总4页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97463
IRG7CH35UB
Features
• Low VCE (ON) Trench IGBT Technology
C
• Low Switching Losses
• SquareRBSOA
• Positive VCE (ON) Temperature co-efficient
• Tightparameterdistribution
G
E
n-channel
Benefits
Applications
• High Efficiency due to Low VCE(on) and Low Switching
Losses
• RuggedtransientPerformanceforincreasedreliability
• ExcellentCurrentsharinginparalleloperation
• Low EMI
•
•
•
•
•
Medium Power Drives
UPS
HEV Inverters
Welding
Induction Heating
VCE
ICn
Chip Type
Die Size
Package
IRG7CH35UB
1200V
20A
3.937 X4.862 mm2
Wafer
Mechanical Parameter
Die Size
3.937 x 4.826
mm2
75
2.423x3.120
0.503 x 0.501
19/10
μm
Minimum Street Width
Emiter Pad Size
Gate Pad Size
mm2
Area Total / Active
Thickness
120
μm
mm
150
Wafer Size
Flat Position
0
Degrees
Maximum-Possible Chips per Wafer
Passivation Frontside
Front Metal
803pcs
Silicon Nitride
Al, Si (4μm)
AI- Ti - Ni- Ag (1kA°-1kA°-4kA°-6kA°)
Electrically conductive epoxy or solder
0.25 mm diameter minimum
Backside Metal
Die Bond
Reject Ink Dot Size
Store in original container, in dry Nitrogen,
<6 months at an ambient temperature of 23°C
Recommended Storage Environment
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1
2/26/10
IRG7CH35UB
Maximum Ratings
Max.
1200
Parameter
Units
V
VCE
Collector-Emitter Voltage, TJ=25°C
DC Collector Current, Limited by TJMAX
Clamped Inductive Load Current, VGE = 20V
Gate Emitter Voltage
IC(Nominal)
ILM
20
A
80
A
VGE
± 30
V
TJ, TSTG
-55 to +175
Operating Junction and Storage Temperature
°C
Static Characteristics (Tested on wafers) . TJ=25°C
Conditions
VGE = 0V, IC =100μA
Parameter
Min. Typ. Max. Units
V(BR)CES
VCE(sat)
VGE(th)
ICES
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Saturated Voltage
Gate-Emitter Threshold Voltage
Zero Gate Voltage Collector Current
Gate Emitter Leakage Current
1200
–––
3.0
–––
1.35
–––
2.0
–––
V
1.6
VGS = 15V, IC =5A , TJ=25°C
6.0
IC = 600μA , VGS = VCE
–––
–––
100
± 100
μA
VCE = 1200V, VGE = 0V
IGES
–––
nA VCE = 0V, VGE = ± 30V
Electrical Characteristics (Not subject to production test- Verified by design/characterization)
Conditions
VGS = 15V, IC = 20A , TJ=25°C
VGS = 15V, IC = 20A , TJ=175°C
TJ = 150°C, IC = 80A
Parameter
Collector-to-Emitter Saturated Voltage
Min. Typ. Max. Units
VCE(sat)
–––
1.9
2.2
V
–––
2.4
–––
FULL SQUARE
VCC = 960V, Vp =1200V
Reverse Bias Safe Operating Area
RBSOA
Rg = 10 , VGE = +20V to 0V
Ω
VGE = 0V
Ciss
Coss
Crss
Qg
Input Capacitance
–––
1905
60
–––
VCE = 30V
ƒ = 1.0MHz,
IC = 20A
Output Capacitance
–––
–––
—
–––
–––
–––
–––
–––
pF
nC
Reverse Transfer Capacitance
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
40
85
Qge
Qgc
VGE = 15V
VCC = 600V
—
15
—
35
Switching Characteristics (Inductive Load-Not subject to production test-Verified by design/
characterization)
Conditions
Parameter
Min. Typ. Max. Units
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
IC = 20A, VCC = 600V
Turn-On delay time
—
—
—
—
—
—
—
—
30
—
—
—
—
—
—
—
—
R = 10 , VGE=15V, L=200μH
Ω
Rise time
15
ns
G
Turn-Off delay time
Fall time
160
80
TJ = 25°C
IC = 20A, VCC = 600V
Turn-On delay time
Rise time
25
R = 10 , VGE=15V, L=200μH
Ω
20
ns
G
Turn-Off delay time
Fall time
200
200
TJ = 175°C
Notes:
Depending on thermal properties of assembly
Not subject to production test- Verified by design / characterization
Values influenced by parasitic L and C in measurement
VCC = 80% (VCES), VGE = 20V, RG = 10Ω
ꢀRefer to AN-1086 for guidelines for measuring V(BR)CES safely
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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IRG7CH35UB
Chip drawing
3.937
[.155]
2.423
[.095]
4.826
[.190]
3.120
[.123]
0.501
[.0197]
0.503
[.0198]
NOTES:
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
2. CONTROLLINGDIMENSION: MILLIMETERS
3. LETTER DESIGNATION:
S = SOURCE
G = GAT E
SK = SOURCE KELVIN
IS = CURRENTSENSE
E = EMITTER
4. DIMENSIONAL TOLERANCES:
BONDINGPADS: < 0.635 TOLERANCE
=
+ /- 0.013
< [.0250] TOLERANCE = + /- [.0005]
> 0.635 TOLERANCE + /- 0.025
WIDT H
&
=
LENGTH
> [.0250] TOLERANCE = + /- [.0010]
OVERALL DIE:
WIDTH
< 1.270 TOLERANCE = + /- 0.102
< [.050] TOLERANCE = + /- [.004]
> 1.270 TOLERANCE = + /- 0.203
> [.050] TOLERANCE = + /- [.008]
&
LENGTH
5. DIE THICKNESS = 0.120 [.0047]
REFERENCE: IRG7CH35UB
IRG7PH35UPBF
IRG7PH35U-EP
IRG7PH35UDPBF
IRG7PH35UD-EP
IRG7PH35UD1PBF
IRG7PH35UD1-EP
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3
IRG7CH35UB
Additional Testing and Screening
For Customers requiring product supplied as Known Good Die (KGD) or requiring specific die level testing, please
contact your local IR Sales.
Shipping
Three shipping options are offered.
•
•
•
Un-sawn wafer
Die in waffle pack (consult the IR Die Sales team for availability)
Die on film (consult the IR Die Sales team for availability)
Tape and Reel is also available for some products. Please consult your local IR sales office or
email http://die.irf.com for additional information.
Please specify your required shipping option when requesting prices and ordering Die product. If not specified, Un-
sawn wafer will be assumed.
Handling
•
Product must be handled only at ESD safe workstations. Standard ESD precautions and safe work
environments are as defined in MIL-HDBK-263.
•
•
Product must be handled only in a class 10,000 or better-designated clean room environment.
Singulated die are not to be handled with tweezers. A vacuum wand with a non-metallic ESD protected tip
should be used.
Wafer/Die Storage
•
•
•
Proper storage conditions are necessary to prevent product contamination and/or degradation after
shipment.
Un-sawn wafers and singulated die can be stored for up to 12 months when in the original sealed pack-
aging at room temperature (45% +/- 15% RH controlled environment).
Un-sawn wafers and singulated die that have been opened can be stored when returned to their contain-
ers and placed in a Nitrogen purged cabinet, at room temperature (45% +/- 15% RH controlled environ-
ment).
•
Note: To reduce the risk of contamination or degradation, it is recommended that product not being used
in the assembly process be returned to their original containers and resealed with a vacuum seal pro-
cess.
•
•
Sawn wafers on a film frame are intended for immediate use and have a limited shelf life.
Die in Surf Tape type carrier tape are intended for immediate use and have a limited shelf life. This is
primarily due to the nature of the adhesive tape used to hold the product in the carrier tape cavity. This
product can be stored for up to 30 days. This applies whether or not the material has remained in its
original sealed container.
Further Information
For further information please contact your local IR Sales office or email your enquiry to
http://die.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.2/2010
4
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