IRG7IC30FDPBF [INFINEON]
Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel;
| 型号： | IRG7IC30FDPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 24A I(C), 600V V(BR)CES, N-Channel 栅 |
| 文件： | 总10页 (文件大小：285K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRG7IC30FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE(on)
C
VCES = 600V
• ZeroVCE(on) temperaturecoefficient
• 3µs Short Circuit Capability
• Square RBSOA
I
NOM = 24A
VCE(on) typ. = 1.60V
Benefits
G
BenchmarkEfficiencyforMotorControl
Applications
• RuggedTransientPerformance
• LowEMI
E
tSC 3μs, TJ(max) = 150°C
n-channel
Applications
• AirConditionerCompressor
• Refrigerator
• VacuumCleaner
• LowFrequencyInverter
E
C
G
TO-220AB
Full-Pak
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
600
V
IC @ TC = 25°C
24
IC @ TC = 100°C
12
ICM
ILM
Pulse Collector Current, VGE = 15V
72
Clamped Inductive Load Current, VGE = 20V
96
A
IF @ TC = 25°C
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
24
IF @ TC = 100°C
12
IFM
96
±30
VGE
PD @ TC = 25°C
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
42
W
PD @ TC = 100°C
17
TJ
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
Typ.
–––
–––
65
Max.
3.0
Units
°C/W
RJC (IGBT)
RJC (Diode)
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
3.7
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
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August 1, 2012
1
IRG7IC30FDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
600
—
Typ.
—
Max.
—
Units
V
Conditions
GE = 0V, IC = 1.0mA
V(BR)CES
V
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
TJ
V(BR)CES
/
V
GE = 0V, IC = 2.0mA (25°C-150°C)
0.51
1.60
1.60
—
—
V/°C
VCE(on)
I
I
C = 24A, VGE = 15V, TJ = 25°C
C = 24A, VGE = 15V, TJ = 150°C
—
1.85
—
—
V
V
VGE(th)
V
V
V
CE = VGE, IC = 1.0mA
Gate Threshold Voltage
4.5
—
7.0
—
VGE(th)/ TJ
CE = VGE, IC = 1.0mA (25°C - 150°C)
CE = 50V, IC = 24A, PW = 30μs
Threshold Voltage temp. coefficient
Forward Transconductance
-14
26
mV/°C
S
gfe
—
—
ICES
VGE = 0V, VCE = 600V
GE = 0V, VCE = 600V, TJ = 150°C
Collector-to-Emitter Leakage Current
—
1.0
30
μA
V
—
1.3
—
mA
V
VFM
I
I
F = 24A
Diode Forward Voltage Drop
—
1.50
1.40
—
1.80
—
F = 24A, TJ = 150°C
—
IGES
VGE = ±30V
Gate-to-Emitter Leakage Current
—
±100
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Max.
130
26
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
88
Units
Conditions
Qg
IC = 24A
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
VGE = 15V
17
nC
VCC = 400V
43
65
I
C = 24A, VCC = 400V, VGE = 15V
G = 22, L = 400μH, TJ = 25°C
Energy losses include tail & diode reverse recovery
C = 24A, VCC = 400V, VGE = 15V
G = 22, L = 400μH, TJ = 25°C
785
780
1570
58
1015
1010
2020
76
R
μJ
I
R
36
ns
54
td(off)
tf
Turn-Off delay time
Fall time
249
114
1090
1530
2620
54
283
133
—
Eon
Eoff
Etotal
td(on)
tr
IC = 24A, VCC = 400V, VGE=15V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
RG=22, L=400μH, TJ = 150°C
—
μJ
ns
pF
—
Energy losses include tail & diode reverse recovery
I
C = 24A, VCC = 400V, VGE = 15V
G = 22, L = 400μH
TJ = 150°C
—
R
35
—
td(off)
tf
Turn-Off delay time
Fall time
295
277
2400
130
57
—
—
Cies
Coes
Cres
VGE = 0V
Input Capacitance
—
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
—
—
f = 1.0Mhz
TJ = 150°C, IC = 96A
V
CC = 480V, Vp 600V
Rg = 22, VGE = +20V to 0V
GE = 15V, VCC = 400V, Vp 600V
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
V
3
—
—
μs
Rg = 22 , Rshunt = 11m TC = 100°C
TJ = 150°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
147
105
22
—
—
—
μJ
ns
A
VCC = 400V, IF = 24A
VGE = 15V, Rg = 22 , L =400μH
Irr
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V, L = 400μH, RG = 22.
Pulse width limited by max. junction temperature.
Ris measured at TJ of approximately 90°C.
Maximum limits are based on statistical sample size characterization.
www.irf.com © 2012 International Rectifier
August 1, 2012
2
IRG7IC30FDPbF
20
18
16
14
12
10
8
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 16.7W
Square Wave:
VCC
I
6
4
Diode as specified
2
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
50
40
30
20
10
0
25
20
15
10
5
0
25
50
75
100
(°C)
125
150
25
50
75
100
(°C)
125
150
T
T
C
C
Fig. 2 - Maximum DC Collector Current vs.
Fig. 3 - Power Dissipation vs. Case
CaseTemperature
Temperature
1000
100
10μsec
10
100
10
1
100μsec
1
1msec
0.1
DC
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
10
100
(V)
1000
1
10
100
(V)
1000
10000
V
V
CE
CE
Fig. 5 - Reverse Bias SOA
Fig. 4 - Forward SOA
TC = 25°C, TJ 150°C, VGE =15V
TJ = 150°C, VGE =20V
3
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August 1, 2012
IRG7IC30FDPbF
100
80
60
40
20
0
100
80
60
40
20
0
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 30μs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 30μs
100
100
V
= 18V
GE
-40°C
25°C
150°C
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
80
60
40
20
0
80
60
40
20
0
0
2
4
6
8
10
0.0
1.0
2.0
3.0
V
(V)
F
V
(V)
CE
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 30μs
Fig. 9 - Typ. Diode Forward Characteristics
tp = 30μs
8
7
6
8
7
6
I
I
I
I
= 6.0A
= 12A
= 24A
= 48A
I
I
I
I
= 6.0A
= 12A
= 24A
= 48A
CE
CE
CE
CE
CE
CE
CE
CE
5
4
3
2
1
5
4
3
2
1
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
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August 1, 2012
4
IRG7IC30FDPbF
100
90
80
70
60
50
40
30
20
10
0
8
7
6
5
4
3
2
1
0
I
I
I
I
= 6.0A
= 12A
= 24A
= 48A
CE
CE
CE
CE
T
= 25°C
J
T
= 150°C
J
0
5
10
15
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 12 - Typical VCE vs. VGE
Fig. 13 - Typ. Transfer Characteristics
VCE = 25V; tp = 30μs
TJ = 150°C
3000
1000
td
OFF
2500
2000
1500
1000
500
t
F
100
10
1
E
OFF
td
ON
E
ON
t
R
0
0
10
20
30
40
50
0
10
20
30
40
50
I
(A)
C
I
(A)
C
Fig. 14 - Typ. Energy Loss vs. IC
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; L = 400μH; VCE = 400V, RG = 22; VGE = 15V
TJ = 150°C; L = 400μH; VCE = 400V, RG = 22; VGE = 15V
2500
1000
td
OFF
2000
E
OFF
t
F
1500
100
E
ON
td
1000
500
0
ON
t
R
10
0
20
40
60
80
100
0
20
40
60
80
100
( )
R
G
Rg ()
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; L = 400μH; VCE = 400V, ICE = 24A; VGE = 15V
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 400μH; VCE = 400V, ICE = 24A; VGE = 15V
5
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August 1, 2012
IRG7IC30FDPbF
30
25
20
15
10
28
26
24
22
20
18
16
R
10
G =
R
22
G =
R
47
G =
R
100
G =
10 15 20 25 30 35 40 45 50
(A)
0
25
50
(
75
100
I
R
F
G
Fig. 18 - Typ. Diode IRR vs. IF
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 150°C
TJ = 150°C
2500
2000
1500
1000
500
28
26
24
22
20
18
16
48A
10
22
100
24A
47
12A
0
0
200
400
600
800
1000
200
300
400
500
600
700
800
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 150°C
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; IF = 24A; TJ = 150°C
14
30
300
T
R
= 10
I
sc
G
sc
12
10
8
25
20
15
10
5
250
200
150
100
50
= 22
R
G
R
= 47
G
G
6
R
= 100
4
8
10
12
14
(V)
16
18
10
20
30
(A)
40
50
V
I
GE
F
Fig. 23 - VGE vs. Short Circuit Time
Fig. 22 - Typ. Diode ERR vs. IF
VCC = 400V; TC = 25°C
TJ = 150°C
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August 1, 2012
6
IRG7IC30FDPbF
10000
1000
100
16
14
12
10
8
V
V
= 400V
CES
CES
Cies
= 300V
6
Coes
Cres
4
2
10
0
0
100
200
V
300
(V)
400
500
0
20
Q
40
60
80
100
, Total Gate Charge (nC)
CE
G
Fig. 24 - Typ. Capacitance vs. VCE
Fig. 25 - Typical Gate Charge vs. VGE
ICE = 24A; L = 600μH
VGE= 0V; f = 1MHz
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.02
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) i (sec)
0.01
0.19486 0.000256
J J
C
0.01
0.32103 0.001648
1.21121 0.116269
11
Ci= iRi
2 2
33
44
SINGLE PULSE
( THERMAL RESPONSE )
1.27150
2.1752
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) i (sec)
0.40773 0.000657
J J
C
0.01
0.001
0.0001
0.55987 0.002467
1.37229 0.108148
11
Ci= iRi
2 2
33
44
1.36164
2.2461
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig. 27. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
August 1, 2012
IRG7IC30FDPbF
L
L
80 V
+
-
DUT
VCC
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
-5V
Rg
DC
DUT
VCC
DUT /
DRIVER
VCC
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
VCC
ICM
R =
VCC
DUT
Rg
Fig.C.T.5 - Resistive Load Circuit
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August 1, 2012
8
IRG7IC30FDPbF
500
400
300
200
100
0
50
500
400
300
200
100
0
50
40
30
20
10
0
tr
tf
TEST
CURRENT
40
90%
ICE
30
20
90% test
current
10% test
current
5% VCE
10
10% ICE
5% VCE
0
Eon
Loss
Eoff Loss
-100
-10
-100
-10
3E-01
-5E-01
0E+00
5E-01
1E+00
-3E-01
-1E-01
1E-01
time(µs)
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.4
30
600
500
400
300
200
100
0
600
QRR
500
400
300
200
100
0
20
VCE
tRR
10
0
Peak
-10
IRR
ICE
-20
-30
-100
-100
-0.25
-0.05
0.15
time (ns)
0.35
-2.0
0.0
2.0
4.0
6.0
8.0
time (µs)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
@ TJ = 150°C using Fig. CT.4
9
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August 1, 2012
IRG7IC30FDPbF
TO-220AB Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Full-Pak Part Marking Information
TO-220AB Full-Pak package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
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August 1, 2012
10
相关型号：
IRG7PA19UPBF
Insulated Gate Bipolar Transistor, 50A I(C), 360V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
INFINEON
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