IRG7PH35UD-EP [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRG7PH35UD-EP |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总11页 (文件大小：462K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96288
IRG7PH35UDPbF
IRG7PH35UD-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) trench IGBT technology
• Low switching losses
• SquareRBSOA
VCES = 1200V
I NOMINAL = 20A
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Ultra fast soft recovery co-pak diode
• Tightparameterdistribution
• Lead-Free
G
TJ(max) = 150°C
VCE(on) typ. = 1.9V
E
n-channel
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
C
C
• Ruggedtransientperformanceforincreasedreliability
• Excellent current sharing in parallel operation
Applications
• U.P.S.
• Welding
• SolarInverter
• InductionHeating
E
E
C
C
G
G
TO-247AC
IRG7PH35UDPbF
TO-247AD
IRG7PH35UD-EP
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
1200
50
Units
V
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
Continuous Collector Current
Nominal Current
IC @ TC = 100°C
25
INOMINAL
20
Pulse Collector Current, VGE=15V
Clamped Inductive Load Current, VGE=20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
ICM
60
A
ILM
80
IF @ TC = 25°C
50
IF @ TC = 100°C
25
IFM
80
VGE
±30
180
70
V
PD @ TC = 25°C
W
PD @ TC = 100°C
TJ
-55 to +150
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.70
0.65
–––
Units
Rθ (IGBT)
JC
Thermal Resistance Junction-to-Case-(each IGBT)
Rθ (Diode)
JC
Thermal Resistance Junction-to-Case-(each Diode)
°C/W
Rθ
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
CS
Rθ
JA
–––
1
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02/08/10
IRG7PH35UDPbF/IRG7PH35UD-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
1200
—
Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
—
1.2
1.9
2.3
—
—
V
V/°C
V
∆V(BR)CES/∆TJ
VCE(on)
VGE = 0V, IC = 1mA (25°C-150°C)
IC = 20A, VGE = 15V, TJ = 25°C
IC = 20A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 600µA
VCE = VGE, IC = 600 A (25°C - 150°C)
CE = 50V, IC = 20A, PW = 30µs
VGE = 0V, VCE = 1200V
GE = 0V, VCE = 1200V, TJ = 150°C
—
—
2.2
—
—
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
—
V
mV/°C
S
∆VGE(th)/∆TJ
µ
Threshold Voltage temp. coefficient
Forward Transconductance
-16
22
V
gfe
—
—
ICES
Collector-to-Emitter Leakage Current
—
2.0
2000
2.8
2.5
—
100
—
µA
V
—
VFM
IGES
IF = 20A
Diode Forward Voltage Drop
—
3.6
—
V
IF = 20A, TJ = 150°C
VGE = ±30V
—
Gate-to-Emitter Leakage Current
—
±100
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
Qg
IC = 20A
85
130
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
VGE = 15V
15
20
nC
µJ
ns
VCC = 600V
35
50
IC = 20A, VCC = 600V, VGE = 15V
1060
620
1680
30
1300
850
2150
50
Ω
RG = 10 , L = 200uH, LS = 150nH, TJ = 25°C
Energy losses include tail & diode reverse recovery
IC = 20A, VCC = 600V, VGE = 15V
RG = 10Ω, L = 200uH, LS = 150nH, TJ = 25°C
15
30
td(off)
tf
Turn-Off delay time
Fall time
160
80
180
105
—
Eon
Eoff
Etotal
td(on)
tr
IC = 20A, VCC = 600V, VGE=15V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
1750
1120
2870
30
Ω
RG=10 , L=200uH, LS=150nH, TJ = 150°C
—
µJ
ns
pF
Energy losses include tail & diode reverse recovery
IC = 20A, VCC = 600V, VGE = 15V
RG = 10Ω, L = 200uH, LS = 150nH
TJ = 150°C
—
—
15
—
td(off)
tf
Turn-Off delay time
Fall time
190
210
1940
120
40
—
—
Cies
Coes
Cres
VGE = 0V
Input Capacitance
—
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
—
—
f = 1.0Mhz
TJ = 150°C, IC = 80A
VCC = 960V, Vp =1200V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
Ω
Rg = 10 , VGE = +20V to 0V
TJ = 150°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
790
105
40
—
—
—
µJ
ns
A
VCC = 600V, IF = 20A
Ω
VGE = 15V, Rg = 10 , L =1.0mH, Ls = 150nH
Irr
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V, RG = 50Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
2
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IRG7PH35UDPbF/IRG7PH35UD-EP
45
40
35
30
25
20
15
10
5
For both:
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Gate drive as specified
Power Dissipation = 70W
Square Wave:
VCC
I
Diode as specified
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
200
60
50
40
30
20
10
0
150
100
50
0
25
50
75
100
(°C)
125
150
0
20 40 60 80 100 120 140 160
T
C
T
(°C)
C
Fig. 2 - Maximum DC Collector Current vs.
Fig. 3- Power Dissipation vs. Case
CaseTemperature
Temperature
1000
100
1000
100
10
1
10µsec
10
100µsec
DC
1
0.1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
1
10
100
(V)
1000
10000
10
100
1000
10000
V
V
(V)
CE
CE
Fig. 4 - Forward SOA
TC = 25°C, TJ ≤ 150°C; VGE =15V
Fig. 5 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
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3
IRG7PH35UDPbF/IRG7PH35UD-EP
80
80
70
60
50
40
30
20
10
0
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
70
60
50
40
30
20
10
0
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6- Typ. IGBT Output Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 30µs
TJ = 25°C; tp = 30µs
80
80
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
-40°C
70
70
60
50
40
30
20
10
0
25°C
150°C
60
50
40
30
20
10
0
0
1
2
3
4
5
6
0
2
4
6
8
10
V
(V)
F
V
(V)
CE
Fig. 8 - Typ. IGBT Output Characteristics
Fig. 9 - Typ. Diode Forward Characteristics
TJ = 150°C; tp = 30µs
tp = 380µs
8
7
6
5
8
7
6
5
I
I
I
= 10A
= 20A
= 40A
I
I
I
= 10A
= 20A
= 40A
CE
CE
CE
CE
CE
CE
4
3
2
1
4
3
2
1
5
10
15
20
4
8
12
16
20
V
(V)
V
(V)
GE
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
4
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IRG7PH35UDPbF/IRG7PH35UD-EP
80
70
60
50
40
8
7
6
5
4
3
2
1
I
I
I
= 10A
= 20A
= 40A
CE
CE
CE
T = 150°C
J
30
20
T
= 25°C
J
10
0
4
5
6
7
8
9
10
5
10
15
20
V
Gate-to-Emitter Voltage (V)
V
(V)
GE,
GE
Fig. 13 - Typ. Transfer Characteristics
Fig. 12 - Typical VCE vs. VGE
VCE = 50V, tp = 30µs
TJ = 150°C
4000
3000
2000
1000
0
1000
td
OFF
t
F
100
10
1
E
ON
td
ON
E
OFF
t
R
0
10
20
(A)
30
40
0
10
20
(A)
30
40
I
I
C
C
Fig. 14 - Typ. Energy Loss vs. IC
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; L = 680µH; VCE = 600V, RG = 10Ω; VGE = 15V
TJ = 150°C; L = 680µH; VCE = 600V, RG = 10Ω; VGE = 15V
10000
3500
3000
E
td
ON
OFF
1000
2500
2000
t
F
E
OFF
100
1500
1000
500
td
ON
t
R
10
0
20
40
60
(Ω)
80
100
0
20
40
60
(Ω)
80
100
R
R
G
G
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
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5
IRG7PH35UDPbF/IRG7PH35UD-EP
50
45
40
35
30
25
20
60
R
5.0Ω
G =
50
40
30
20
10
R
R
R
10Ω
47Ω
100Ω
G =
G =
G =
0
20
40
60
(Ω)
80
100
10
15
20
25
(A)
30
35
40
I
R
F
G
Fig. 18 - Typ. Diode IRR vs. IF
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 150°C
TJ = 150°C
55
50
45
40
35
30
25
20
6000
5000
4000
3000
2000
1000
0
40A
5.0Ω
10Ω
47Ω
20A
10A
100Ω
0
200 400 600 800 10001200140016001800
200 400 600 800 1000 1200 1400 1600
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 20A; TJ = 150°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; TJ = 150°C
5.0
4.0
3.0
2.0
1.0
2000
I
= 600µA
= 5.0
R
R
Ω
C
G
= 10
Ω
G
R
=
=
47Ω
1500
1000
500
0
G
R
100Ω
G
25
50
75
100
125
150
175
10
15
20
25
(A)
30
35
40
T , Temperature (°C)
I
J
F
Fig. 22 - Typ. Diode ERR vs. IF
Fig. 23 - Typical Gate Threshold Voltage
TJ = 150°C
(Normalized)vs.JunctionTemperature
6
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IRG7PH35UDPbF/IRG7PH35UD-EP
16
10000
1000
100
14
12
10
8
V
V
= 600V
= 400V
CES
CES
Cies
6
Coes
4
2
Cres
0
10
0
20
Q
40
60
80
100
0
100
200
300
(V)
400
500
600
, Total Gate Charge (nC)
V
G
CE
Fig. 24 - Typical Gate Charge vs. VGE
Fig. 23 - Typ. Capacitance vs. VCE
ICE = 20A; L = 2.4mH
VGE= 0V; f = 1MHz
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.017
0.218
0.299
0.177
0.000013
0.000141
0.002184
0.013107
τ
τ
J τJ
τ
Cτ
0.01
0.01
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
R1
R2
R2
R3
R3
R4
R4
0.01
Ri (°C/W) τi (sec)
R1
0.015
0.235
0.281
0.130
0.000043
0.000408
0.003593
0.020382
τ
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRG7PH35UDPbF/IRG7PH35UD-EP
L
L
80 V
+
-
DUT
VCC
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
R = VCC
ICM
L
-5V
VCC
DUT
DUT /
DRIVER
VCC
Rg
Rg
Fig.C.T.4 - Resistive Load Circuit
Fig.C.T.3 - Switching Loss Circuit
C force
100K
D1 22K
C sense
DUT
G force
0.0075µF
E sense
E force
Fig.C.T.5 - BVCES Filter Circuit
8
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IRG7PH35UDPbF/IRG7PH35UD-EP
800
700
600
500
400
300
200
100
0
80
70
60
50
40
30
20
10
0
800
700
600
500
400
300
200
100
0
40
35
30
25
20
15
10
5
tf
tr
TEST CURRENT
90% ICE
90% test current
5% VCE
10% test
current
5% ICE
5% VCE
0
Eon Loss
0.3
Eoff Loss
1
-100
-10
-100
-5
-0.3
-0.1
0.1
time (µs)
0.5
-0.5
0
0.5
1.5
2
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.4
30
20
10
0
EREC
tRR
-10
Peak
IRR
-20
-30
-40
-50
10%
Peak
IRR
-0.25
-0.05
0.15
time (µS)
0.35
0.55
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
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9
IRG7PH35UDPbF/IRG7PH35UD-EP
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRG7PH35UDPbF/IRG7PH35UD-EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2010
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11
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
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