IRG7I319UPBF [INFINEON]
Insulated Gate Bipolar Transistor, 30A I(C), 330V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, FULL-PAK-3;
| 型号： | IRG7I319UPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 30A I(C), 330V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, FULL-PAK-3 局域网 栅 功率控制 晶体管 |
| 文件： | 总7页 (文件大小：297K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-96273
PDP TRENCH IGBT
IRG7I319UPbF
Key Parameters
Features
VCE min
330
1.42
170
150
V
V
A
l
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
V
I
CE(ON) typ. @ IC = 30A
RP max @ TC= 25°C
l
TM
TJ max
°C
l
Low VCE(on) and Energy per Pulse (EPULSE
for improved panel efficiency
)
l
l
High repetitive peak current capability
Lead Free package
C
E
C
G
G
TO-220AB
Full-Pak
E
n-channel
G
C
E
Gate
Collector
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trenchIGBTtechnologytoachievelowVCE(on)andlowEPULSETM ratingpersiliconareawhichimprovepanel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGE
±30
Gate-to-Emitter Voltage
V
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current
30
15
170
A
W
34
Power Dissipation
14
Power Dissipation
0.27
Linear Derating Factor
W/°C
°C
TJ
-40 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
300
Thermal Resistance
Parameter
Typ.
Max.
Units
Rθ
RθCS
Junction-to-Case
–––
0.50
—
3.6
—
JC
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
°C/W
g
Rθ
65
JA
Wt
2.0
—
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1
10/02/09
IRG7I319UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 250µA
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units
330 ––– –––
BVCES
V
Reference to 25°C, ICE = 1mA
VGE = 15V, ICE = 15A
V
/ T
∆
J
∆Β
Breakdown Voltage Temp. Coefficient
––– 0.38 ––– V/°C
––– 1.20 1.45
––– 1.34 –––
CES
VGE = 15V, ICE = 25A
VGE = 15V, ICE = 30A
––– 1.42 –––
VCE(on)
VGE = 15V, ICE = 40A
Static Collector-to-Emitter Voltage
1.57 –––
––– 2.02 –––
2.79
V
VGE = 15V, ICE = 70A
VGE = 15V, ICE = 120A
VGE = 15V, ICE = 25A, TJ = 150°C
––– 1.44 –––
VGE(th)
Gate Threshold Voltage
2.2
––– 4.7
V
V
CE = VGE, ICE = 1.3mA
∆VGE(th)/∆TJ
ICES
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
––– -8.8 ––– mV/°C
VCE = 330V, VGE = 0V
–––
1.0
50
20
VCE = 330V, VGE = 0V, TJ = 125°C
µA
nA
200
VCE = 330V, VGE = 0V, TJ = 150°C
VGE = 30V
––– 125 –––
––– ––– 100
––– ––– -100
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
V
V
V
GE = -30V
CE = 25V, ICE = 25A
CE = 200V, IC = 25A, VGE = 15V
gfe
Qg
Qgc
td(on)
tr
–––
–––
–––
–––
–––
–––
55
38
12
16
22
81
–––
–––
–––
–––
–––
–––
S
nC
IC = 25A, VCC = 196V
RG = 10Ω, L = 200µH, LS = 150nH
TJ = 25°C
ns
ns
td(off)
tf
td(on)
tr
td(off)
tf
Turn-Off delay time
Fall time
––– 105 –––
IC = 25A, VCC = 196V
RG = 10Ω, L = 200µH, LS = 150nH
TJ = 150°C
Turn-On delay time
Rise time
–––
–––
–––
16
25
95
–––
–––
–––
Turn-Off delay time
Fall time
––– 203 –––
100 ––– –––
VCC = 240V, VGE = 15V, R = 5.1
Ω
G
tst
Shoot Through Blocking Time
ns
µJ
L = 220nH, C= 0.40µF, VGE = 15V
VCC = 240V, R = 5.1 TJ = 25°C
––– 854 –––
––– 1083 –––
EPULSE
Ω,
L = 220nH, C= 0.40µF, VGE = 15V
Energy per Pulse
G
VCC = 240V, R = 5.1
TJ = 100°C
Ω,
G
Class 1C
Human Body Model
Machine Model
(Per JEDEC standard JESD22-A114)
ESD
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
VGE = 0V
––– 1085 –––
Cies
Coes
Cres
LC
Input Capacitance
VCE = 30V
Output Capacitance
–––
–––
57
31
–––
–––
pF
ƒ = 1.0MHz
Between lead,
Reverse Transfer Capacitance
Internal Collector Inductance
–––
–––
4.5 –––
7.5 –––
nH 6mm (0.25in.)
from package
LE
Internal Emitter Inductance
and center of die contact
Notes:
Half sine wave with duty cycle <= 0.05, ton=2µsec.
Rθ is measured at TJ of approximately 90°C.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRG7I319UPbF
200
150
100
50
200
150
100
50
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig 2. Typical Output Characteristics @ 75°C
Fig 1. Typical Output Characteristics @ 25°C
200
200
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
150
100
50
150
100
50
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
200
10
I
= 25A
C
T = 25°C
J
8
6
4
2
0
T
= 150°C
150
100
50
J
T = 25°C
J
T = 150°C
J
0
0
2
4
6
8
10
12
4
8
12
16
20
V
(V)
V
(V)
GE
GE
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
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3
IRG7I319UPbF
35
30
25
20
15
10
5
180
160
140
120
100
80
ton= 2µs
Duty cycle <= 0.05
Half Sine Wave
60
40
20
0
0
0
25
50
75
(°C)
100
125
150
25
50
75
100
125
150
T
C
Case Temperature (°C)
Fig 7. Maximum Collector Current vs. Case Temperature
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
1400
1100
V
= 240V
L = 220nH
C = 0.4µF
CC
1300
1200
1100
1000
900
L = 220nH
C = variable
1000
900
800
700
600
500
100°C
100°C
25°C
25°C
800
700
190 200 210 220 230 240 250 260 270
Collector-to-Supply Voltage (V)
160 170 180 190 200 210 220 230
V
I , Peak Collector Current (A)
C
CC,
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Supply Voltage
1400
1000
V
= 240V
CC
L = 220nH
t = 1µs half sine
C= 0.4µF
C= 0.3µF
C= 0.2µF
1200
1000
800
100
10
1
10µsec
100µsec
1msec
600
400
Tc = 25°C
Tj = 150°C
Single Pulse
200
0.1
20
40
60
80
100 120 140 160
1
10
100
1000
T , Temperature (ºC)
J
V
(V)
CE
Fig 12. Forrward Bias Safe Operating Area
Fig 11. EPULSE vs. Temperature
4
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IRG7I319UPbF
10000
1000
100
16
14
12
10
8
V
= 0V,
= C
f = 1 MHZ
+ C , C
GS
I
= 25A
C
C
C
C
SHORTED
ies
ge
gd
ce
= C
res
oes
gc
V
= 240V
CES
CES
CES
= C + C
ce
gc
V
= 150V
= 60V
Cies
V
6
4
Coes
Cres
2
0
10
0
10
Q
20
30
40
50
0
50
100
150
200
, Total Gate Charge (nC)
G
V
, Collector-toEmitter-Voltage(V)
CE
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.38124 0.000366
τ
τ
J τJ
τ
Cτ
0.56023 0.001917
1.19321 0.091553
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
1.46677
2.1537
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRG7I319UPbF
A
RG
C
PULSE A
PULSE B
DRIVER
L
VCC
B
Ipulse
RG
DUT
tST
Fig 16b. tst Test Waveforms
Fig 16a. tst and EPULSE Test Circuit
VCE
Energy
IC Current
L
VCC
DUT
0
1K
Fig 16c. EPULSE Test Waveforms
6
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IRG7I319UPbF
TO-220AB Full-Pak Package Outline
Dimensions are shown in milimeters (inches)
TO-220 Full-Pak Part Marking Information
TO-220AB Full-Pak package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/2009
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