IRG7IC18FDPBF [INFINEON]
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel;
| 型号： | IRG7IC18FDPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel 栅 |
| 文件： | 总11页 (文件大小：597K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRG7IC18FDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
VCES = 600V
C
IC = 7.5A, TC = 100°C
tSC ≥ 3μs, TJ(max) = 150°C
VCE(on) typ. = 1.60V @ Ic = 10A
E
G
C
G
E
TO-220AB
n-channel
Full-Pak
Applications
• AirConditionerCompressor
• Refrigerator
• VacuumCleaner
• LowFrequencyInverter
G
Gate
C
E
Collector
Emitter
Features
Benefits
High efficienct motor drive application
Low VCE(on)
Efficiency stable over temperature
Optimized trade-off between low losses and EMI performance
Rugged hard switching operation
Zero VCE(on) temperature coefficient
Ultra Fast Soft Recovery Co-pak Diode
Square RBSOA and 100% Clamp IL Tested
3μs Short Circuit Capability
Fully isolated Fullpak package
Lead-Free, RoHS Compliant
Enables short circuit protection scheme
Easy heatsink assembly
Environmentally friendlier
Standard Pack
Base part number
Package Type
Orderable part number
Form
Quantity
IRG7IC18FDPbF
TO-220 FullPak
Tube
50
IRG7IC18FDPbF
Absolute Maximum Ratings
Parameter
Max.
600
14
Units
V
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
IC @ TC = 25°C
IC @ TC = 100°C
Continuous Collector Current
Nominal Current
7.5
INominal
24
ICM
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Gate-to-Emitter Voltage
40
ILM
40
A
IF @ TC = 25°C
14
IF @ TC = 100°C
7.5
IFM
40
VGE
±20
±30
30
V
VGE
PD @ TC = 25°C
Maximum Power Dissipation
W
°C
PD @ TC = 100°C
Maximum Power Dissipation
12
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
1
www.irf.com © 2012 International Rectifier
July 27, 2012
IRG7IC18FDPbF
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
Max.
4.1
5.1
–––
65
Units
RqJC (IGBT)
RqJC (Diode)
RqCS
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
°C/W
RqJA
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
Min.
600
—
Typ.
—
Max. Units
Conditions
VGE = 0V, IC = 250μA
V(BR)CES
—
V
Δ
Δ
V(BR)CES/ TJ
Temperature Coeff. of Breakdown Voltage
0.62
1.40
1.60
1.20
1.60
—
—
V/°C VGE = 0V, IC = 1.0mA (25°C-150°C)
—
—
IC = 5A, VGE = 15V, T = 25°C
J
—
1.85
—
IC = 10A, VGE = 15V, TJ = 25°C
V
VCE(on)
Collector-to-Emitter Saturation Voltage
IC = 5A, VGE = 15V, T = 150°C
J
—
4.5
—
—
—
—
—
—
—
—
IC = 10A, VGE = 15V, TJ = 150°C
VGE(th)
Gate Threshold Voltage
7.0
—
V
VCE = VGE, IC = 420μA
Δ
Δ
VGE(th)/ TJ
Threshold Voltage temp. coefficient
Forward Transconductance
-14
mV/°C VCE = VGE, IC = 420μA (25°C - 150°C)
gfe
ICES
10
—
S
VCE = 50V, IC = 10A, PW = 20μs
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IF = 10A
Collector-to-Emitter Leakage Current
1.0
25
μA
360
1.45
1.40
—
—
VFM
IGES
Diode Forward Voltage Drop
1.75
—
V
IF = 10A, TJ = 150°C
Gate-to-Emitter Leakage Current
±100
nA VGE = ±30V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max.
Units
Conditions
Qg
40
8
60
12
IC = 10A
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
nC VGE = 15V
VCC = 400V
20
30
350
415
765
30
570
630
1200
45
μJ
IC = 10A, VCC = 400V, VGE = 15V
Ω
RG = 47 , L = 1.05mH, T = 25°C
J
Energy losses include tail & diode reverse recovery
Rise time
40
50
ns
td(off)
tf
Turn-Off delay time
Fall time
180
170
460
800
1260
20
200
190
—
Eon
Eoff
Etotal
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
—
μJ
—
IC = 10A, VCC = 400V, VGE=15V
Ω
—
RG= 47 , L= 1.05mH, TJ = 150°C
Energy losses include tail & diode reverse recovery
Rise time
40
—
ns
td(off)
tf
Turn-Off delay time
Fall time
225
370
1010
39
—
—
Cies
Coes
Cres
Input Capacitance
—
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
—
pF VCC = 30V
f = 1.0Mhz
25
—
TJ = 150°C, IC = 40A
VCC
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
Ω
Rg = 47 , VGE = +20V to 0V
VGE = 15V, VCC
3
—
—
μs
Ω
Ω
Rg = 47 , Rshunt = 25m , TC = 100°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
80
95
11
—
—
—
μJ
ns
A
TJ = 150°C
VCC = 400V, IF = 10A
Ω
VGE = 15V, Rg = 47 , L = 880μH
Irr
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V, L = 1.05mH, RG = 47Ω.
Pulse width limited by max. junction temperature.
Rθ is measured at TJ of approximately 90°C.
Maximum limits are based on statistical sample size characterization.
www.irf.com © 2012 International Rectifier
July 27, 2012
2
IRG7IC18FDPbF
14
12
10
8
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 12W
Square Wave:
VCC
6
I
4
Diode as specified
2
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
14
12
10
8
30
25
20
15
10
5
6
4
2
0
0
25
50
75
100
(°C)
125
150
25
50
75
100
(°C)
125
150
T
T
C
C
Fig. 2 - Maximum DC Collector Current vs.
Fig. 3 - Power Dissipation vs. Case
CaseTemperature
Temperature
100
100
10μsec
10
100μsec
1
10
1msec
DC
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
1
1
10
100
1000
10
100
(V)
1000
V
(V)
V
CE
CE
Fig. 5 - Reverse Bias SOA
Fig. 4 - Forward SOA
TJ = 150°C, VGE =20V
TC = 25°C, TJ ≤ 150°C, VGE =15V
3
www.irf.com © 2012 International Rectifier
July 27, 2012
IRG7IC18FDPbF
40
30
20
10
0
40
30
20
10
0
V
= 18V
GE
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20μs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20μs
40
40
V
= 18V
GE
-40°C
25°C
150°C
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
30
20
10
0
30
20
10
0
0
2
4
6
8
10
0.0
0.5
1.0
1.5
(V)
2.0
2.5
3.0
V
F
V
(V)
CE
Fig. 8 - Typ. IGBT Output Characteristics
Fig. 9 - Typ. Diode Forward Characteristics
TJ = 150°C; tp = 20μs
tp = 20μs
8
8
7
6
7
6
I
I
I
= 5.0A
= 10A
= 20A
CE
CE
CE
I
I
I
= 5.0A
= 10A
= 20A
CE
CE
CE
5
4
3
2
1
5
4
3
2
1
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
www.irf.com © 2012 International Rectifier
July 27, 2012
4
IRG7IC18FDPbF
8
7
6
5
4
3
2
1
40
30
20
10
0
I
I
I
= 5.0A
= 10A
= 20A
CE
CE
CE
T = 25°C
J
T
= 150°C
J
5
6
7
8
9
10
11
12
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 12 - Typical VCE vs. VGE
Fig. 13 - Typ. Transfer Characteristics
VCE = 50V; tp = 20μs
TJ = 150°C
1600
1400
1200
1000
800
600
400
200
0
1000
t
F
td
t
E
OFF
OFF
100
R
E
ON
td
ON
10
0
5
10
(A)
15
20
0
5
10
(A)
15
20
I
C
I
C
Fig. 15 - Typ. Switching Time vs. IC; TJ = 150°C
L = 1.05mH; VCE = 400V, RG = 47Ω; VGE = 15V
Fig. 14 - Typ. Energy Loss vs. IC; TJ = 150°C
L = 1.05mH; VCE = 400V, RG = 47Ω; VGE = 15V
1000
1000
t
F
E
OFF
800
600
400
200
td
OFF
100
10
1
t
R
td
ON
E
ON
0
20
40
60
80
100
0
20
40
60
80
100
Ω
( )
R
G
Rg (Ω)
Fig. 17 - Typ. Switching Time vs. RG; TJ = 150°C
Fig. 16 - Typ. Energy Loss vs. RG; TJ = 150°C
L = 1.05mH; VCE = 400V, ICE = 10A; VGE = 15V
L = 1.05mH; VCE = 400V, ICE = 10A; VGE = 15V
5
www.irf.com © 2012 International Rectifier
July 27, 2012
IRG7IC18FDPbF
20
15
10
5
18
16
14
12
10
8
Ω
10
R
G =
Ω
22
R
G =
Ω
R
47
G =
Ω
R
100
G =
6
0
25
50
(Ω)
75
100
0
5
10
I
15
20
25
(A)
R
F
G
Fig. 18 - Typ. Diode IRR vs. IF
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 150°C
TJ = 150°C
16
14
12
10
8
1200
1000
800
20A
22Ω
10Ω
10A
100Ω
600
47Ω
400
5A
200
6
100
300
500
di /dt (A/μs)
700
900
200
300
400
500
600
di /dt (A/μs)
F
F
Fig. 21 - Typ. Diode QRR vs. diF/dt
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 400V; VGE = 15V; TJ = 150°C
VCC = 400V; VGE = 15V; IF = 10A; TJ = 150°C
200
130
15
Ω
= 10
R
G
110
90
70
50
30
10
13
11
9
T
sc
150
100
50
I
sc
Ω
= 22
R
G
Ω
= 47
R
G
7
Ω
= 100
R
G
5
0
3
0
5
10
15
20
25
8
10
12
14
(V)
16
18
I
(A)
V
F
GE
Fig. 22 - Typ. Diode ERR vs. IF
Fig. 23- Typ. VGE vs. Short Circuit Time
TJ = 150°C
VCC=400V, TC =25°C
www.irf.com © 2012 International Rectifier
July 27, 2012
6
IRG7IC18FDPbF
10000
1000
100
10
16
14
12
10
8
V
V
= 400V
= 300V
CES
CES
Cies
6
Coes
Cres
4
2
1
0
0
100
200
300
(V)
400
500
0
5
10 15 20 25 30 35 40 45
, Total Gate Charge (nC)
V
Q
CE
G
Fig. 24- Typ. Capacitance vs. VCE
Fig. 25 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz
ICE = 10A; L = 1mH
10
1
D = 0.50
0.20
0.10
0.05
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
R1
0.1
0.02
0.01
0.4924
0.6397
1.3151
1.6558
0.00034
0.00148
0.08701
2.12610
τ
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 26. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
D = 0.50
0.20
1
0.10
0.05
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
R1
0.02
0.01
0.1
0.5922
1.4078
1.5914
1.8102
0.00024
0.00127
0.04596
1.90530
τ
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig. 27. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
www.irf.com © 2012 International Rectifier
July 27, 2012
IRG7IC18FDPbF
L
L
80 V
+
-
DUT
VCC
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
-5V
Rg
DC
DUT
VCC
DUT /
DRIVER
VCC
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
VCC
ICM
R =
VCC
DUT
Rg
Fig.C.T.5 - Resistive Load Circuit
www.irf.com © 2012 International Rectifier
July 27, 2012
8
IRG7IC18FDPbF
600
500
400
300
200
100
0
30
25
20
15
10
5
600
500
400
300
200
100
0
30
tf
tr
25
20
15
TEST CURRENT
90% ICE
10% ICE
90% ICE
10
5
5% VCE
10% ICE
5% VCE
0
0
Eon Loss
0.2 0.3
Eoff Loss
-100
-5
-100
-5
-0.4-0.2 0 0.2 0.4 0.6 0.8 1 1.2 1.4
-0.2 -0.1
0
0.1
time(μs)
time (μs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.4
15
500
250
200
150
100
50
VCE
QRR
10
400
tRR
5
0
300
200
ICE
100
Peak
IRR
-5
-10
0
0
-15
-0.25
0.00
0.25
0.50
-100
-50
-2 -1 0
1
2
3
4
5
6
7
time (μS)
Time (uS)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 25°C using Fig. CT.3
@ TJ = 150°C using Fig. CT.4
9
www.irf.com © 2012 International Rectifier
July 27, 2012
IRG7IC18FDPbF
TO-220AB Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Full-Pak Part Marking Information
EXAMPLE: THIS IS AN IRFI840G
WIT H AS S E MB L Y
PART NUMBER
LOT CODE 3432
INTERNATIONAL
RECTIFIER
LOGO
IRFI840G
ASSEMBLED ON WW 24, 2001
IN THE ASSEMBLY LINE "K"
124K
32
34
DATE CODE
YEAR 1 = 2001
WEEK 24
AS S E MB L Y
LOT CODE
Note: "P" in assembly lineposition
indicates "L ead-F ree"
LINE K
TO-220AB Full-Pak package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com © 2012 International Rectifier
July 27, 2012
10
IRG7IC18FDPbF
Qualification Information†
Industrial
(per JEDEC JESD47F guidelines )††
Qualification Level
Comments: This part number(s) passed Industrial qualification.
IR’s Consumer qualification level is granted by extension of the
higher Industrial level.
Moisture Sensitivity Level
RoHS Compliant
TO220 Fullpak
Not Applicable
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
11
www.irf.com © 2012 International Rectifier
July 27, 2012
相关型号：
IRG7IC28UPBF
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-220AB, LEAD FREE, PLASTIC, TO-220, FULL PACK-3
INFINEON
IRG7PA19UPBF
Insulated Gate Bipolar Transistor, 50A I(C), 360V V(BR)CES, N-Channel, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
INFINEON
©2020 ICPDF网 联系我们和版权申明