IRG7I313UPBF [INFINEON]
PDP TRENCH IGBT; PDP TRENCH IGBT
| 型号： | IRG7I313UPBF |
| 厂家： | 
Infineon |
| 描述： | PDP TRENCH IGBT |
| 文件： | 总7页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97411
IRG7I313UPbF
PDP TRENCH IGBT
Key Parameters
Features
VCE min
V
330
1.35
160
150
V
V
l
Advanced Trench IGBT Technology
Optimized for Sustain and Energy Recovery
circuits in PDP applications
CE(ON) typ. @ IC = 20A
l
I
RP max @ TC= 25°C
A
°C
TM
l
Low VCE(on) and Energy per Pulse (EPULSE
for improved panel efficiency
)
TJ max
l
l
High repetitive peak current capability
Lead Free package
C
E
G
C
G
E
TO-220 Full-Pak
IRG7I313UPbF
n-channel
G
C
E
Gate
Collector
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trenchIGBTtechnologytoachievelowVCE(on)andlowEPULSETM ratingpersiliconareawhichimprovepanel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGE
±30
Gate-to-Emitter Voltage
V
IC @ TC = 25°C
IC @ TC = 100°C
IRP @ TC = 25°C
PD @TC = 25°C
PD @TC = 100°C
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current
20
10
160
A
W
34
Power Dissipation
14
Power Dissipation
0.27
Linear Derating Factor
W/°C
°C
TJ
-40 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Typ.
Max.
3.7
—
Units
°C/W
g
Rθ
Junction-to-Case
–––
0.50
—
JC
RθCS
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Rθ
65
JA
Wt
2.0
—
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1
08/05/09
IRG7I313UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 250µA
Parameter
Collector-to-Emitter Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
330 ––– –––
––– 0.4 ––– V/°C
BVCES
∆Β
V
Reference to 25°C, ICE = 1mA
VGE = 15V, ICE = 12A
∆
V
CES/ TJ
––– 1.21 1.45
––– 1.35 –––
1.75 –––
VGE = 15V, ICE = 20A
VCE(on)
VGE = 15V, ICE = 40A
Static Collector-to-Emitter Voltage
V
V
VGE = 15V, ICE = 60A
––– 2.14 –––
––– 1.41 –––
VGE = 15V, ICE = 20A, TJ = 150°C
VCE = VGE, ICE = 1.0mA
VGE(th)
Gate Threshold Voltage
2.2
––– 4.7
∆VGE(th)/∆TJ
ICES
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
––– -10 ––– mV/°C
VCE = 330V, VGE = 0V
–––
1.0
25
75
10
VCE = 330V, VGE = 0V, TJ = 125°C
VCE = 330V, VGE = 0V, TJ = 150°C
µA
nA
150
–––
–––
V
GE = 30V
GE = -30V
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
––– ––– 100
––– ––– -100
V
VCE = 25V, ICE = 12A
CE = 240V, IC = 12A, VGE = 15V
gfe
Qg
Qgc
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
47
33
12
11
13
75
68
11
14
86
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
V
nC
IC = 12A, VCC = 196V
Ω
RG = 10 , L=210µH
ns
ns
td(off)
tf
td(on)
tr
td(off)
tf
TJ = 25°C
Turn-Off delay time
Fall time
IC = 12A, VCC = 196V
RG = 10Ω, L=200µH, LS= 150nH
TJ = 150°C
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
––– 190 –––
100 ––– –––
V
CC = 240V, VGE = 15V, RG= 5.1Ω
L = 220nH, C= 0.20µF, VGE = 15V
Ω,
tst
Shoot Through Blocking Time
ns
µJ
––– 480 –––
––– 570 –––
EPULSE
VCC = 240V, RG= 5.1
TJ = 25°C
Energy per Pulse
L = 220nH, C= 0.20µF, VGE = 15V
Ω,
TJ = 100°C
VCC = 240V, RG= 5.1
Class 1C
Human Body Model
Machine Model
(Per JEDEC standard JESD22-A114)
ESD
Class B
(Per EIA/JEDEC standard EIA/JESD22-A115)
VGE = 0V
––– 880 –––
Cies
Coes
Cres
LC
Input Capacitance
VCE = 30V
Output Capacitance
–––
–––
–––
47
26
–––
–––
pF
ƒ = 1.0MHz
Between lead,
Reverse Transfer Capacitance
Internal Collector Inductance
4.5 –––
nH 6mm (0.25in.)
from package
LE
Internal Emitter Inductance
–––
7.5 –––
and center of die contact
Notes:
Half sine wave with duty cycle = 0.05, ton=2µsec.
R is measured at TJ of approximately 90°C.
θ
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRG7I313UPbF
200
160
120
80
200
160
120
80
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
V
= 18V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
40
40
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig 2. Typical Output Characteristics @ 75°C
Fig 1. Typical Output Characteristics @ 25°C
200
200
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
160
120
80
160
120
80
40
40
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
200
14
I
= 12A
C
12
10
8
160
120
T = 25°C
J
T
= 150°C
J
T
T
= 25°C
J
J
6
= 150°C
80
40
0
4
2
0
0
5
10
15
20
2
4
6
8
10
12
14
16
V
(V)
V
(V)
GE
GE
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
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IRG7I313UPbF
20
160
140
120
100
80
ton= 2µs
Duty cycle = 0.05
Half Sine Wave
15
10
5
60
40
20
0
0
25
50
75
100
(°C)
125
150
25
50
75
100
125
150
Case Temperature (°C)
T
C
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
Fig 7. Maximum Collector Current vs. Case Temperature
1300
1300
V
= 240V
L = 220nH
C = 0.4µF
CC
1200
1100
1000
900
1200
1100
1000
900
L = 220nH
C = variable
100°C
100°C
25°C
25°C
800
700
800
600
700
500
400
600
160 170 180 190 200 210 220 230
195 200 205 210 215 220 225 230 235 240
Collector-to-Emitter Voltage (V)
I , Peak Collector Current (A)
C
V
CE,
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage
100
1600
V
= 240V
CC
C= 0.4µF
C= 0.3µF
L = 220nH
t = 1µs half sine
1400
1200
1000
800
10µsec
100µsec
10
1msec
1
C= 0.2µF
125
Tc = 25°C
Tj = 150°C
Single Pulse
600
0.1
400
1
10
100
1000
25
50
75
100
150
V
(V)
T , Temperature (ºC)
CE
J
Fig 11. EPULSE vs. Temperature
Fig 12. Forrward Bias Safe Operating Area
4
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IRG7I313UPbF
10000
1000
100
20
16
12
8
I = 12A
D
V
V
V
= 240V
= 150V
= 60V
DS
DS
DS
Cies
4
Coes
Cres
0
10
0
10
20
30
40
0
100
200
Q
Total Gate Charge (nC)
G
V
(V)
CE
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
10
D = 0.50
1
0.20
0.10
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.05
0.0433
1.3307
1.5908
0.7282
0.000006
0.000170
0.001311
0.006923
τ
τ
J τJ
τ
0.1
0.01
0.02
0.01
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
SINGLE PULSE
Notes:
1. Duty Factor D = t1/t2
( THERMAL RESPONSE )
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG7I313UPbF
A
RG
C
PULSE A
PULSE B
DRIVER
L
VCC
B
Ipulse
RG
DUT
tST
Fig 16a. tst and EPULSE Test Circuit
Fig 16b. tst Test Waveforms
VCE
Energy
IC Current
L
VCC
DUT
0
1K
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
6
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IRG7I313UPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220 Full-Pak Part Marking Information
TO-220 Full-Pak package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/2009
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