PTFC262157SHV1R250XTMA1 [INFINEON]
RF Power Field-Effect Transistor;
| 型号： | PTFC262157SHV1R250XTMA1 |
| 厂家： | 
Infineon |
| 描述： | RF Power Field-Effect Transistor |
| 文件： | 总10页 (文件大小：166K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTFC262157SH
Thermally-Enhanced High Power RF LDMOS FET
200 W, 28 V, 2620 – 2690 MHz
Description
The PTFC262157SH LDMOS FET is designed for use in Doherty
cellular power applications in the 2620 MHz to 2690 MHz frequency
band. Input and output matching have been optimized for maximum
performance as the peak side transistor in a Doherty amplifier. Other
features include a thermally-enhanced package with surface-mount
flange. Manufactured with Infineon's advanced LDMOS process, this
device provides excellent thermal performance and superior reliability.
PTFC262157SH
Package H-34288G-4/2
(formed leads)
Features
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1200 mA, ƒ = 2620 MHz,
3GPP WCDMA signal, 8 dB PAR,
•
Broadband internal matching, optimized for Doherty
peak side
10 MHz carrier spacing, 3.84 MHz BW
•
•
Wide video bandwidth
Typical single-carrier WCDMA performance, 2690
MHz, 28 V, 10 dB PAR @ 0.01% CCDR
21
20
19
18
17
16
50
40
30
20
10
0
- Output power at P
- Efficiency = 29%
- Gain = 19.5 dB
= 50 W
1dB
- ACPR = –31.5 dBc at 2690 MHz
•
•
Capable of handling 10:1 VSWR @ 28 V,
180 W (CW) output power
Gain
Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
•
•
Low thermal resistance
Efficiency
40
Pb-free and RoHS compliant
c262157sh-gr1
32
36
44
48
52
Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (device with flat leads tested in Infineon production test fixture)
= 28 V, I = 1150 mA, P = 50 W average, ƒ = 2690 MHz, 3GPP WCDMA signal, 3.84 MHz bandwidth,10 dB PAR
V
DD
DQ
OUT
@0.01% CCDF
Characteristic
Gain
Symbol
Gps
Min
18.0
27
Typ
19.5
29
Max
—
Unit
dB
Drain Efficiency
ηD
—
%
Adjacent Channel Power Ratio
ACPR
—
–31.5
–30
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 10
Rev. 03, 2014-04-14
PTFC262157SH
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I = 10 mA
V
(BR)DSS
DS
V
V
= 28 V, V = 0 V
I
I
—
1.0
10.0
1.0
—
µA
µA
µA
Ω
DS
DS
GS
DSS
DSS
GSS
= 63 V, V = 0 V
—
—
GS
Gate Leakage Current
On-state Resistance
Operating Gate Voltage
V
GS
= 10 V, V = 0 V
DS
I
—
—
V
GS
= 10 V, V = 0.1 V
DS
R
DS(on)
—
0.05
2.65
V
= 28 V, I
= 1.1 A
V
GS
—
—
V
DS
DQ
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-source Voltage
Gate-source Voltage
Operating Voltage
V
DSS
V
–6 to +10
0 to +32
225
V
GS
DD
V
V
Junction Temperature
Storage Temperature Range
T
J
°C
T
STG
–65 to +150
0.34
°C
Thermal Resistance (T
= 70°C, 150 W CW)
R
JC
θ
°C/W
CASE
Ordering Information
Type and Version
Order Code
Package and Description
Shipping
PTFC 262157SH V1 R250
PTFC262157SHV1R250XTMA1 H-34288G-4/2, ceramic open-cavity, earless surface Tape & Reel, 250 pcs
mount
Data Sheet
2 of 10
Rev. 03, 2014-04-14
PTFC262157SH
Typical Performance (data taken in an Infineon gull-wing applications circuit)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1200 mA, ƒ = 2655 MHz,
3GPP WCDMA signal, 8 dB PAR,
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1200 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
10 MHz carrier spacing, 3.84 MHz BW
21
20
19
18
17
16
50
40
30
20
10
0
21
20
19
18
17
16
50
40
30
20
10
0
Gain
Gain
Efficiency
Efficiency
c262157sh-gr3
c262157sh-gr2
32
36
40
44
48
52
32
36
40
44
48
52
Output Power (dBm)
Output Power (dBm)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1200 mA, ƒ = 2620 MHz,
3GPP WCDMA signal, 8 dB PAR,
VDD = 28 V, IDQ = 1200 mA, ƒ = 2655 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
10 MHz carrier spacing, 3.84 MHz BW
-20
-30
-40
-50
60
40
20
0
-20
-30
-40
-50
60
40
20
0
IMD Low
IMD Up
ACPR
IMD Low
IMD Up
ACPR
Efficiency
Efficiency
c262157sh-gr4
c262157sh-gr5
32
36
40
44
48
52
32
36
40
44
48
52
Output Power (dBm)
Output Power (dBm)
Data Sheet
3 of 10
Rev. 03, 2014-04-14
PTFC262157SH
Typical Performance (cont.)
Two-carrier WCDMA Drive-up
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1200 mA,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
VDD = 28 V, IDQ = 1200 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-20
-30
-40
-50
60
40
20
0
-20
-25
-30
-35
-40
IMD Low
IMD Up
ACPR
2620 MHz
2655 MHz
2690 MHz
Efficiency
IMD Up
IMD Low
c262157sh-gr6
c262157sh-gr7
32
36
40
44
48
52
30
34
38
42
46
50
54
Output Power (dBm)
Output Power (dBm)
CW Performance
VDD = 28 V, IDQ = 1200 mA
Small Signal CW Performance
VDD = 28 V, IDQ = 1200 mA
2620 MHz
2655 MHz
2690 MHz
21
20
19
18
17
16
15
60
50
40
30
20
10
0
25
20
15
10
5
0
-10
-20
-30
-40
Gain
Gain
IRL
Efficiency
c262157sh-gr8
c262157sh-gr12
34 36 38 40 42 44 46 48 50 52 54 56
Output Power (dBm)
2450
2550
2650
2750
2850
Frequency (MHz)
Data Sheet
4 of 10
Rev. 03, 2014-04-14
PTFC262157SH
Typical Performance (cont.)
CW Performance
at selected VDD
IDQ = 1200 mA, ƒ = 2655 MHz
CW Performance
at selected VDD
IDQ = 1200 mA, ƒ = 2620 MHz
21
20
19
18
17
16
15
VDD = 24 V
60
50
40
30
20
10
0
21
60
50
40
30
20
10
0
V
V
DD = 28 V
DD = 32 V
VDD = 24 V
V
V
DD = 28 V
DD = 32 V
20
19
18
17
16
15
Gain
Gain
Efficiency
Efficiency
c262157sh-gr11
c262157sh-gr9
c262157sh-gr10
34 36 38 40 42 44 46 48 50 52 54 56
34 36 38 40 42 44 46 48 50 52 54 56
Output Power (dBm)
Output Power (dBm)
CW Performance
at selected VDD
IDQ = 1200 mA, ƒ = 2690 MHz
21
20
19
18
17
16
15
60
50
40
30
20
10
0
VDD = 24 V
V
V
DD = 28 V
DD = 32 V
Gain
Efficiency
c262157sh-gr12
c262157sh-gr11
34 36 38 40 42 44 46 48 50 52 54 56
Output Power (dBm)
Data Sheet
5 of 10
Rev. 03, 2014-04-14
PTFC262157SH
Data Sheet
6 of 10
Rev. 03, 2014-04-14
PTFC262157SH
Reference Circuit, tuned for 2620 – 2690 MHz
DUT
Reference Fixture Part No. LTN/PTFC262157SH V1
PCB
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66
Find Gerber files for this reference fixture on the Infineon Web site at (http://www.infineon.com/rfpower)
PTFC262157SH
RO4350, .020 (60)
RO4350, .020 (60)
R801 C802
C801
VDD
R804
C803
S1
R803
S3
C208 C204
VDD
R101
R802
C209
C210
S2
C106
R102
C207
R105
R104
C104
C212
C201
C107
RF_IN
RF_OUT
C213
C215
C211
C102
C101
C103
R103
C206
C105
C214
C205
VDD
C203
C202
8 1 2 5 7 _ 8 - 8
Reference circuit assembly diagram (not to scale)
Component Information
Component
Description
Suggested Manufacturer
P/N
Input
C101
Chip capacitor, 1.3 pF
Chip capacitor, 10 pF
Chip capacitor, 4.7 µF
Chip capacitor, 10 pF
Chip capacitor, 0.1 pF
Capacitor, 1k pF
ATC100A1R3CW150XB
ATC
C102
ATC100B100JW500XB
ATC
C103, C104
C105, C106
C107
Nichicon
ATC
F931C475MAA
ATC100A100JW500XB
ATC100A0R1AW150XB
ECJ-1VB1H102K
ATC
C801, C802, C803
Panasonic Electronic Components
(table cont. next page)
Rev. 03, 2014-04-14
Data Sheet
7 of 10
PTFC262157SH
Reference Circuit (cont.)
Component Information (cont.)
Component
Description
Suggested Manufacturer
P/N
Input (cont.)
R101, R802
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Panasonic Electronic Components
Infineon Technoligies
ERJ-8GEYJ100V
ERJ-3GEYJ100V
ERJ-8GEYJ512V
ERJ-8GEYJ101V
ERJ-3GEYJ122V
ERJ-3GEYJ132V
BCP56-10
Resistor, 10 Ω
Resistor, 10 Ω
Resistor, 5.1k Ω
Resistor, 100 Ω
Resistor, 1.2k Ω
Resistor, 1.3k Ω
Transistor,
R102, R103, R104
R105
R801
R803
R804
S1
S2
Voltage regulator
Potentiometer, 2k Ω
Fairchild Semiconductor
LM7805
S3
Bourns Inc.
3224W-1-202E
Output
C201, C215
C202, C208
C203, C204
C205, C209
C206, C207
C210, C214
C211, C212
C213
Chip capacitor, 0.3 pF
Capacitor, 10 µF
ATC
ATC100A0R3CW150XB
UMK325C7106MM-T
C4532X7R2A105M230KA
281M5002106K
Taiyo Yuden
Chip capacitor, 1 µF
Capacitor, 10 µF
TDK Corporation
Garrett
Chip capacitor, 2.2 µF, 50 V
Capacitor, 220 µF, 35 V
Chip capacitor, 12 pF
Chip capacitor, 1.2 pF
TDK Corporation
C4532X7R1H225M160KA
EEE-FP1V221AP
Panasonic Electronic Components
ATC
ATC
ATC100A120JW150XB
ATC100A1R2CW150XB
Data Sheet
8 of 10
Rev. 03, 2014-04-14
PTFC262157SH
Package Outline Specifications
Package H-34288G-4/2 (formed leads)
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6
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005].
4. Pins: D – drain, S – source, G – gate, V – drain voltage (V ).
DD
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information tabout products and packaging at the Infineon Internet page
(www.infineon.com/rfpower)
Data Sheet
9 of 10
Rev. 03, 2014-04-14
PTFC262157SH V1
Revision History
Revision Date
Data Sheet
Advance
Page
all
Subjects (major changes since last revision)
Proposed specification for new product development
Product released to production, information complete and current.
Maximum junction temperature raised to 225 °C.
01
02
03
2012-08-07
2013-08-08
2014-04-14
Production
Production
all
2
We Listen toYour Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
(highpowerRF@infineon.com)
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
Edition 2014-04-14
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
Data Sheet
10 of 10
Rev. 03, 2014-04-14
相关型号：
PTFC262808SVV1R250
Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 â 2690 MHz
INFINEON
PTFC262808SVV1R250XTMA1
Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 â 2690 MHz
INFINEON
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