PTFC270051M [CREE]
High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 â 2700 MHz;
| 型号： | PTFC270051M |
| 厂家： | 
CREE, INC |
| 描述： | High Power RF LDMOS Field Effect Transistor 5 W, 28 V, 900 â 2700 MHz |
| 文件： | 总14页 (文件大小：745K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTFC270051M
High Power RF LDMOS Field Effect Transistor
5 W, 28 V, 900 – 2700 MHz
Description
The PTFC270051M is an unmatched 5-watt LDMOS FET suitable
for power amplifier applications with frequencies from 900 MHz to
2700 MHz. This LDMOS transistor offers excellent gain, efficiency
and linearity performance in a small overmolded plastic package.
PTFC270051M
Package PG-SON-10
Features
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA
•ꢀ Unmatched
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
•ꢀ Typical CW performance, 940 MHz, 28 V
- Output power (P ) = 6.5 W
1dB
- Gain = 23 dB
22
21
20
19
18
17
16
60
50
40
30
20
10
0
- Efficiency = 62%
Gain
•ꢀ Typical CW performance, 2170 MHz, 28 V
- Output power (P ) = 7.3 W
1dB
- Gain = 20.3 dB
- Efficiency = 60%
•ꢀ Typical CW performance, 2655 MHz, 28 V
- Output power (P ) = 7.3 W
1dB
- Gain = 19.9 dB
Efficiency
2110 MHz
2140 MHz
2170 MHz
- Efficiency = 59.5%
•ꢀ Capable of handling 10:1 VSWR @ 28 V, 5 W (CW)
output power
c270051m-gr1.3
•ꢀ Integrated ESD protection: Human Body Model
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Class 1A (per JESD22-A114)
•ꢀ Pb-free and RoHS compliant
RF Characteristics, 2170 MHz
CW Specifications (tested in Wolfspeed test fixture)
V
DD
= 28 V, I
= 65 mA, P = 5 W, ƒ = 2110 MHz, ƒ = 2170 MHz
OUT 1 2
DQ
Characteristic
Symbol
Min
Typ
Max
Unit
Gain
G
18.5
19.5
—
dB
ps
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 02, 2018-06-20
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
PTFC270051M
2
DC Characteristics
Characteristic
Conditions
Symbol
Min
65
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
Gate Leakage Current
On-State Resistance
V
GS
= 0 V, I = 10 mA
V(
BR)DSS
DS
V
= 60 V, V = 0 V
I
—
—
1
µA
µA
W
DS
GS
DSS
GSS
V
GS
= 10 V, V = 0 V
I
—
—
1
DS
V
GS
= 10 V, V = 0.1 V
R
—
2
—
DS
DS(on)
Operating Gate Voltage
V
= 28 V, I
= 65 mA
V
GS
2.2
2.7
3.2
V
DS
DQ
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
V
DSS
V
–6 to +10
0 to +32
225
V
GS
DD
V
V
Junction Temperature
Storage Temperature Range
T
J
°C
T
STG
–65 to +150
3.84
°C
Thermal Resistance (T
70°C, 5.5 W CW)
R
°C/W
CASE
JC
q
Moisture Sensitivity Level
Level
Test Standard
Package Temperature
Unit
3
IPC/JEDEC J-STD-020
260
°C
Ordering Information
Type
Order Code
Package and Description
Shipping
PTFC270051M V2 R1K
PTFC270051M-V2-R1K
PG-SON-10, molded plastic, SMD
Tape & Reel, 1000 pcs
Evaluation Boards
Order Code
Frequency
Description
LTN/PTFC270051M V2
LTN/PTFC270051M E3
LTN/PTFC270051M E4
LTN/PTFC270051M E5
LTN/PTFC270051M E6
2110 – 2170 MHz
2620 – 2690 MHz
920 – 960 MHz
1930 – 1990 MHz
1805 – 1880 MHz
Class AB with combined outputs, R04360, 0.508 mm thick
Class AB with combined outputs, R04360, 0.508 mm thick
Class AB with combined outputs, R04360, 0.508 mm thick
Class AB with combined outputs, R04360, 0.508 mm thick
Class AB with combined outputs, R04360, 0.508 mm thick
Find Gerber files for these reference fixtures on the Wolfspeed Web site at www.wolfspeed.com/RF
Rev. 02, 2018-06-20
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFC270051M
3
RF Characteristics, 2170 MHz
Two-carrierWCDMA Specifications (notsubjecttoproductiontest—verifiedbydesign/characterizationinWolfspeedtestfixture)
V
DD
= 28 V, I
= 65 mA, P = 0.8 W avg, ƒ = 2157.5 MHz, ƒ = 2167.5 MHz
OUT 1 2
DQ
3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Symbol
Min
—
Typ
21
Max
—
Unit
dB
G
ps
Drain Efficiency
Intermodulation Distortion
hD
—
21.5
–35.5
—
%
IMD
—
—
dBc
Typical Performance, 2170 MHz (data taken in a production test fixture)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA, ƒ = 2140 MHz
3GPP WCDMA signal, 8 dB PAR,
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA, ƒ = 2110 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
10 MHz carrier spacing, 3.84 MHz BW
-5
-15
-25
-35
-45
-55
-65
65
55
45
35
25
15
5
-5
-15
-25
-35
-45
-55
-65
65
55
45
35
25
15
5
IMD Low
IMD Up
ACPR
IMD Low
IMD Up
ACPR
Efficiency
Efficiency
c270051m-2100-gr5
c270051m-2100-gr4
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Rev. 02, 2018-06-20
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFC270051M
4
Typical Performance, 2170 MHz (cont.)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA, ƒ = 2170 MHz
3GPP WCDMA signal, 8 dB PAR,
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA,
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
10 MHz carrier spacing, 3.84 MHz BW
-5
65
55
45
35
25
15
5
-15
-25
-35
-45
-55
IMD Low
IMD Up
ACPR
-15
-25
-35
-45
-55
-65
Efficiency
2110 IMD Low
2140 IMD Low
2170 IMD Low
2110 IMD Up
2140 IMD Up
2170 IMD Up
c270051m-2100-gr6
c270051m-2100-gr7
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
CW Performance
at selected supply voltage
IDQ = 65 mA, ƒ = 2170 MHz
CW Performance
VDD = 28 V, IDQ = 65 mA
22
21
20
19
18
17
16
15
70
60
50
40
30
20
10
0
24
66
22
20
18
16
14
54
42
30
18
6
Gain
Gain
Efficiency
VDD = 24 V
2110 MHz
2140 MHz
2170 MHz
V
V
DD = 28 V
DD = 32 V
Efficiency
c270051m-2100-gr11
c270051m-2100-gr8
22 24 26 28 30 32 34 36 38 40
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Output Power (dBm)
Rev. 02, 2018-06-20
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFC270051M
5
Typical Performance, 2170 MHz (cont.)
Small Signal CW Performance
VDD = 28 V, IDQ = 65 mA
22
0
21
-5
IRL
20
19
18
-10
-15
-20
-25
-30
Gain
17
16
c270051m-2100-gr12
2000 2050 2100 2150 2200 2250 2300
Frequency (MHz)
Broadband Circuit Impedance, 2170 MHz
D
S
Z Source W
Z Load W
Freq
[MHz]
Z Source
Z Load
R
jX
R
jX
2110
2140
2170
1.5
1.5
1.5
–2.6
–2.7
–2.9
9.5
8.7
7.7
5.4
5.5
5.6
G
Load Pull Performance
Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA
P
1dB
Class AB
Max Output Power
Max PAE
Freq
[MHz]
Zs
[W]
Zl
[W]
Gain
[dB]
PAE
[%]
P
[dBm]
P
[W]
Zl
[W]
Gain
[dB]
PAE
[%]
P
[dBm]
P
OUT
[W]
OUT
OUT
OUT
2110
2140
2170
1.5 – j2.6 10.6 + j2.6 20.6 55.0 39.50 8.9
8.3 + j8.2
7.6 + j8.8
6.2 + j8.3
22.5 64.9 38.50 7.1
22.9 64.1 37.90 6.2
23.0 63.8 37.40 5.5
1.4 – j2.7
1.4 – j2.9
9.8 + j2.8
9.2 + j2.8
20.5 56.4 39.46 8.8
20.7 56.2 39.20 8.3
Rev. 02, 2018-06-20
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFC270051M
6
Reference Circuit, 2170 MHz
DUT
PTFC270051M
Test Fixture Part No.
PCB
LTN/PTFC270051M V2
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66
Find Gerber files for this test fixture on the Wolfspeed Web site at (www.wolfspeed.com/RF)
VDD
C203
R101
C103
C202
R102
C102
C201 C204
RF_IN
RF_OUT
C101
PTFC270051M_06
RO4350, .020 (169)
c 2 7 0 0 5 1 M _ c d _ 1 0 - 1 6 - 1 3
2100 MHz
Production test circuit assembly diagram (not to scale)
Components Information
Component
Description
Supplier
P/N
C101
Chip capacitor, 1 pF
Chip capacitor, 2.2 µF
Chip capacitor, 12 pF
Chip capacitor, 1.1 pF
Chip capacitor, 12 pF
Capacitor, 10 µF
ATC
ATC600S1R0BI250X
C4532X7R1H225M160KA
ATC600S120BT250X
ATC600S1R1BT250X
ATC600S120BT250X
UMK325C7106MM-T
ATC600S120BT250X
ERJ-8GEYJ100V
C102
TDK Corporation
ATC
C103
C201
ATC
C202
ATC
C203
Taiyo Yuden
ATC
C204
Chip capacitor, 12 pF
Resistor, 10 W
R101, R102
Panasonic
Rev. 02, 2018-06-20
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFC270051M
7
RF Characteristics, 940 MHz
Two-carrierWCDMA Specifications (not subject to production test—verified by design/characterization inWolfspeed test fixture)
V
DD
= 28 V, I
= 65 mA, P = 0.8 W avg, ƒ = 935 MHz, ƒ = 945 MHz
OUT 1 2
DQ
3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Symbol
Min
—
Typ
24
Max
—
Unit
dB
G
ps
Drain Efficiency
Intermodulation Distortion
hD
—
20.7
–42
—
%
IMD
—
—
dBc
Typical Performance, 940 MHz
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-15
-25
-35
-45
-55
25
60
45
30
15
0
Gain
24
23
Efficiency
22
21
920 MHz
940 MHz
960 MHz
920 IMDL
940 IMDL
960 IMDL
920 IMDU
940 IMDU
960 IMDU
c270051m-900-gr7
c270051m-900-gr1.3
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Rev. 02, 2018-06-20
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFC270051M
8
Reference Circuit, 940 MHz (cont.)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA, ƒ = 920 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA, ƒ = 940 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
-5
65
55
45
35
25
15
5
-5
-15
-25
-35
-45
-55
-65
65
55
45
35
25
15
5
IMD Low
IMD Up
ACPR
IMD Low
ACPR
IMD Up
Efficiency
-15
-25
-35
-45
-55
-65
Efficiency
c270051m-900-gr5
c270051m-900-gr4
22 24 26 28 30 32 34 36 38
Output Power (dBm)
22
24
26
28
30
32
34
36
38
Output Power (dBm)
Two-carrier WCDMA Drive-up
CW Performance
VDD = 28 V, IDQ = 65 mA
VDD = 28 V, IDQ = 65 mA, ƒ = 960 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
26
24
22
20
18
16
66
54
42
30
18
6
-5
-15
-25
-35
-45
-55
-65
65
55
45
35
25
15
5
Gain
IMD Low
IMD Up
ACPR
Efficiency
920 MHz
940 MHz
960 MHz
Efficiency
25
c270051m-900-gr6
c270051m-900-gr8
22 24 26 28 30 32 34 36 38
Output Power (dBm)
21
29
33
37
41
Output Power (dBm)
Rev. 02, 2018-06-20
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFC270051M
9
Typical Performance, 940 MHz (cont.)
CW Performance
at selected supply voltages
IDQ = 65 mA, ƒ = 960 MHz
Small Signal CW Performance
VDD = 28 V, IDQ = 65 mA
26
66
54
42
30
18
6
26
24
22
20
18
16
-4
Gain
24
-8
22
-12
-16
-20
-24
Gain
20
Efficiency
VDD = 24 V
18
V
V
DD = 28 V
DD = 32 V
IRL
c270051m-900-gr9
16
c270051m-900-gr12
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
750 800 850 900 950 1000 1050 1100
Frequency (MHz)
Broadband Circuit Impedance
D
Z Source W
Z Load W
Freq
[MHz]
Z Source
Z Load
R
jX
R
jX
920
940
960
3.3
3.4
3.5
10
25.6
24.7
24.3
13.2
13.3
14.7
G
10.2
10.3
S
Loadpull Performance
Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA
P
1dB
Class AB
Max Output Power
Max PAE
Freq
[MHz]
Zs
[W]
Zl
[W]
Gain
[dB]
PAE
[%]
P
[dBm]
P
Zl
[W]
Gain
[dB]
PAE
[%]
P
[dBm]
P
OUT
OUT
OUT
OUT
[W]
8.7
8.6
8.1
[W]
6.3
6.5
5.6
920
940
960
3.35 + j10
3.4 + j10.2
25.7 + j4.7
24.8 + j6.3
25.5
25.6
25.3
62.2 39.40
62.1 39.35
60.3 39.10
25.6 + j21.7 27.6
24.6 + j20.4 27.3
24.1 + j22.8 27.3
70.7 38.00
69.2 38.10
68.2 37.50
3.55 + j10.3 24.4 + j6.6
Rev. 02, 2018-06-20
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
PTFC270051M
10
RF Characteristics, 2655 MHz
Two-carrierWCDMA Specifications (not subject to production test—verified by design/characterization in Wolfspeed test fixture)
V
DD
= 28 V, I
= 65 mA, P = 0.8 W avg, ƒ = 2650 MHz, ƒ = 2660 MHz
OUT 1 2
DQ
3GPP WCDMA signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Symbol
Min
—
Typ
20.9
19
Max
—
Unit
dB
G
ps
Drain Efficiency
Intermodulation Distortion
hD
—
—
%
IMD
—
–40
—
dBc
Typical Performance, 2655 MHz
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA,
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
22
60
50
40
30
20
10
0
-15
-25
-35
-45
Gain
21
20
19
2620 IMD Low
2620 IMD Up
2655 IMD Low
2655 IMD Up
2690 IMD Low
Efficiency
18
17
16
2620 MHz
2655 MHz
2690 MHz
2690 IMD Up
c270051m-2600-gr7
c270051m-2600-gr1.3
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Rev. 02, 2018-06-20
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFC270051M
11
Typical Performance, 2655 MHz (cont.)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA, ƒ = 2620 MHz
3GPP WCDMA signal, 8 dB PAR,
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA, ƒ = 2655 MHz
3GPP WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
10 MHz carrier spacing, 3.84 MHz BW
-5
65
55
45
35
25
15
5
-5
-15
-25
-35
-45
-55
-65
65
55
45
35
25
15
5
IMD Low
IMD Up
ACPR
Efficiency
IMD Low
IMD Up
ACPR
-15
-25
Efficiency
-35
-45
-55
c270051m-2600-gr4
-65
c270051m-2600-gr5
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 65 mA, ƒ = 2690 MHz
3GPP WCDMA signal, 8 dB PAR,
CW Performance
VDD = 28 V, IDQ = 65 mA
10 MHz carrier spacing, 3.84 MHz BW
22
21
20
19
18
17
16
15
70
60
50
40
30
20
10
0
-5
65
IMD Low
IMD Up
ACPR
Gain
-15
-25
-35
-45
-55
-65
55
45
35
25
15
5
Efficiency
2620 MHz
2655 MHz
2690 MHz
Efficiency
c270051m-2600-gr8
c270051m-2600-gr6
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
22 24 26 28 30 32 34 36 38 40
Output Power (dBm)
Rev. 02, 2018-06-20
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFC270051M
12
Typical Performance, 2655 MHz (cont.)
CW Performance
at selected supply voltages
IDQ = 65 mA, ƒ = 2690 MHz
Small Signal CW Performance
VDD = 28 V, IDQ = 65 mA
22
70
60
50
40
30
20
10
0
23
22
21
20
19
18
17
0
Gain
21
-5
20
Gain
VDD = 24 V
-10
-15
-20
-25
-30
V
V
DD = 28 V
DD = 32 V
19
18
17
16
15
Efficiency
IRL
c270051m-2600-gr11
c270051m-2600-gr12
22
26
30
34
38
42
2590
2640
2690
2740
Output Power (dBm)
Frequency (MHz)
Broadband Circuit Impedance
D
Z Source W
Z Load W
Freq
[MHz]
Z Source
Z Load
R
jX
R
jX
2490
2590
2690
1.5
1.5
1.5
–4.1
–4.6
–5.5
7.2
6.6
6.3
1.5
0.7
G
-0.6
S
Load Pull Performance
Pulsed CW signal: 160 µsec, 10% duty cycle; 28 V, 65 mA
P
1dB
Class AB
Max Output Power
Max PAE
Freq
[MHz]
Zs
[W]
Zl
[W]
Gain
[dB]
PAE
[%]
P
[dBm]
P
[W]
Zl
[W]
Gain
[dB]
PAE
[%]
P
[dBm]
P
OUT
[W]
OUT
OUT
OUT
2490
2590
2690
1.5 – j4.1 8.2 + j0.3 19.7 55.6 39.0 7.94
1.5 – j4.6 6.9 – j0.8 18.8 55.6 39.0 7.94
1.5 – j5.5 7.8 – j2.0 18.4 55.6 39.0 7.94
6.2 + j2.8
5.0 + j2.1
4.9 + j0.8
20.9 62.2 38.4
21.0 63.4 37.9
20.4 63.6 37.8
6.9
6.2
6.0
Rev. 02, 2018-06-20
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFC270051M
13
Package Outline Specifications
Package PG-SON-10
0.54
[.021] 2 PLACES
5X .320
[.0126] 2 PLACES
4.00
[.157]
6
7
8
9
10
.815
[.0321]
S
4.00
[.157]
2.97
[.117]
2.37
[.093]
5X .515
[.0203] 2 PLACES
5
4
3
2
1
INDEX
MARKING
INDEX
MARKING
4X 0.65
[.026] 2 PLACES
TOP VIEW
0.30
[.012]
3.40
[.134]
BOTTOM VIEW
0.38
1.42
[.056]
[.015] BOTH SIDES
PG-SON-10_po_02_12-07-2012
0.05 [.002]
SIDE VIEW
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.10 [0.004].
4. Package dimensions: 4.0 mm X 4.0 mm X 1.42 mm.
5. Pins: 1 – 5, gate; 6 – 10, drain; S (bottom side metallization), source.
6. Gold plating thickness: 0.025 – 0.127 micron [1 – 5 microinch].
Rev. 02, 2018-06-20
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFC270051M
14
Revision History
Revision
Date
Data Sheet Type
Production
Page
All
Subjects (major changes since last revision)
Specifications and performance represent released product.
Add ordering information for additional evaluation boards.
Converted to Wolfspeed Data Sheet
01
2015-03-20
2016-07-26
2018-06-20
01.1
02
Production
2
Production
All
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.com
919.407.7816
Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.
Rev. 02, 2018-06-20
www.wolfspeed.com
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