PTFC262808FV [CREE]
Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 â 2690 MHz;
| 型号： | PTFC262808FV |
| 厂家： | 
CREE, INC |
| 描述： | Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 â 2690 MHz |
| 文件： | 总8页 (文件大小：806K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PTFC262808FV
Thermally-Enhanced High Power RF LDMOS FET
280 W, 28 V, 2620 – 2690 MHz
Description
The PTFC262808FV is a 280-watt LDMOS FET intended for use in
multi-standard cellular power amplifier applications in the 2620 to
2690 MHz frequency band. Features include input and output match-
ing, high gain and thermally-enhanced package. Manufactured with
Wolfspeed's advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
PTFC262808FV
Package H-37275G-6/
Features
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1800 mA, ƒ = 2690 MHz, 3GPP
WCDMA signal, 8 dB PAR,
•
•
Broadband internal matching
Typical 1-carrier WCDMA performance, 2655 MHz,
28 V, 10 dB PAR
10 MHz carrier spacing, 3.84 MHz BW
- Output power at P
- Efficiency = 24%
- Gain = 18 dB
= 56 W avg.
1dB
20
19
18
17
16
15
50
40
30
20
10
0
Efficiency
- ACPR = –33 dBc @ 3.84 MHz
•
Integrated ESD protection: Human Body Model,
Class 1C (per JESD22-A114)
Gain
•
•
•
Low thermal resistance
RoHS-compliant
Capable of handling 10:1 VSWR at 28 V, 280 W
(CW) ouput power
c262808fv-gr1
30
34
38
42
46
50
54
tput Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed production test fixture)
= 28 V, I = 1800 mA, P = 56 W average, ƒ = 2655 MHz, 3GPP WCDMA signal, channel bandwidth = 3.84 MHz,
V
DD
DQ
OUT
peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol
Min
16.5
22
Typ
18.0
24
Max
—
Unit
dB
Gain
G
ps
Drain Efficiency
Adjacent Channel Power Ratio
hD
—
%
ACPR
—
–33
–30
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 04, 2018-07-03
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
PTFC262808FV
2
DC Characteristics (single side)
Characteristic
Conditions
Symbol
Min
65
—
Typ
—
Max
—
Unit
V
Drain-Source Breakdown Voltage
Drain Leakage Current
V
GS
= 0 V, I = 10 mA
V
(BR)DSS
DS
V
V
= 28 V, V = 0 V
I
I
—
1.0
10.0
1
µA
µA
µA
W
DS
DS
GS
DSS
DSS
GSS
= 63 V, V = 0 V
—
—
GS
Gate Leakage Current
On-State Resistance
Operating Gate Voltage
V
GS
= 10 V, V = 0 V
DS
I
—
—
V
GS
= 10 V, V = 0.1 V
DS
R
—
0.05
2.6
—
DS(on)
V
DS
= 28 V, I
= 1800 mA
V
GS
—
—
V
DQ
Maximum Ratings
Parameter
Symbol
Value
65
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
V
DSS
V
–6 to +10
0 to +32
225
V
GS
DD
V
V
Junction Temperature
Storage Temperature Range
T
J
°C
T
STG
–65 to +150
0.20
°C
Thermal Resistance (T
= 70°C, 200 W CW)
R
°C/W
CASE
JC
q
Ordering Information
Type and Version
PTFC262808FV V1 R0
PTFC262808FV V1 R250
Order Code
Package and Description
Shipping
PTFC262808FV-V1-R0
H-37275G-6/2, ceramic open-cavity, earless
H-37275G-6/2, ceramic open-cavity, earless
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
PTFC262808V1-R250
Rev. 04, 2018-07-03
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFC262808FV
3
Typical Performance (data taken in Wolfspeed production test fixture)
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1800 mA,
3GPP WCDMA signal, 8 dB PAR,
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1800 mA, ƒ = 2690 MHz, 3GPP
WCDMA signal, 8 dB PAR,
10 MHz carrier spacing, 3.84 MHz BW
10 MHz carrier spacing, 3.84 MHz BW
-20
-25
-30
-35
-40
-45
-50
60
50
40
30
20
10
0
-15
-25
-35
-45
IMD Low
IMD Up
ACPR
2620 MHz
2655 MHz
2690 MHz
Efficiency
IMD Up
IMD Low
c262802fv-gr2
c262802fv-gr3
30
34
38
42
46
50
54
30
34
8
42
46
50
54
Output Power (dBm)
Output Power (dBm)
Pulsed CW Performance
Pulsed CW Performance
Gain & Input Return Loss, single side
VDD = 28 V, IDQ = 1.8 A
VDD = 28 V, IDQ = 650 mA
20
0
19
18
17
16
15
14
55
IRL
Gain
19
18
17
16
15
14
-5
45
35
25
15
5
-10
-15
-20
-25
-30
2620 MHz
2655 MHz
2690 MHz
Gain
Efficiency
c262802fv-gr6
c262802fv-gr4
2450
2550
2650
2750
2850
36
40
44
48
52
56
Output Power (dBm)
Frequency (MHz)
Rev. 04, 2018-07-03
4600 Silicon Drive
|
Durham, NC 27703 | www.wolfspeed.com
PTFC262808FV
4
Typical Performance (cont.)
Pulsed CW Performance
at selected VDD
IDQ = 1800 mA, ƒ = 2690 MHz
VDD = 32 V
20
19
18
17
16
15
14
60
50
40
30
20
10
0
V
V
DD = 28 V
DD = 24 V
Efficiency
Gain
c262802fv-gr5
36
40
44
48
52
56
Output Power (dBm)
Broadband Circuit Impedance
Z Source
Z Load
D
S
Frequency
MHz
Z Source W
Z Load W
R
jX
R
jX
G
G
2620
2.88
2.99
3.10
–1.58
–1.55
–1.52
0.55
0.53
0.52
–2.45
–2.39
–2.33
2655
D
2690
Rev. 04, 2018-07-03
4600 Silicon Drive
|
Durham, NC 27703 | www.wolfspeed.com
PTFC262808FV
5
Reference Circuit, tuned for 2620 – 2690 MHz
DUT
PTFC262808FV
Test Fixture Part No.
PCB
LTN/PTFC262808FV V1
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66
Find Gerber files for this test fixture on the Wolfspeed Web site at (www.wolfspeed.com/RF)
RO4350, .020 (60)
RO4350, .020 (60)
R802
C801
C802
R803
VDD
S1
C207
C208
C205
R104
S3
R801
R102
R804
R101
C206
C102
C108
C106
C104
C103
C201
RF_IN
RF_OUT
C107
C101
R103
C209
C105
R105
C202
C204
C203
VDD
PTFC262808FV_OUT_02
2 8 2 8 0 8 f v _ c d _ 7 - 1 9 - 1 3
PTFC262808FV_IN_02
c
Reference circuit assembly diagram (not to scale)
Component Information
Component
Description
Suggested Manufacturer
P/N
Input
C101, C102
C103, C104
C105, C106
C107, C108
C801, C802, C803
R101, R102
Chip capacitor, 10 pF
Chip capacitor, 18 pF
Chip capacitor, 0.4 pF
Capacitor, 10 µF
ATC
ATC100A100JW500XB
ATC
ATC100A180JW150XB
ATC100B0R4CW500XB
LLL31BC70G106MA01L
ECJ-1VB1H102K
ATC
Murata Electronics North America
Panasonic
Chip capacitor, 1,000 pF
Resistor, 10 W
Panasonic Electronic Components
ERJ-3GEYJ100V
(table cont. next page)
Rev. 04, 2018-07-03
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFC262808FV
6
Reference Circuit (cont.)
Component Information (cont.)
Component
Description
Suggested Manufacturer
P/N
Input (cont.)
R102, R103, R104, R801, Resistor, 10 W
Panasonic Electronic Components
ERJ-8GEYJ100V
R802
R803
R804
S1
Resistor, 1.3k W
Resistor, 1.2k W
Potentiometer, 2k W
Transistor
Panasonic Electronic Components
Panasonic Electronic Components
Bourns Inc.
ERJ-3GEYJ132V
ERJ-3GEYJ122V
3224W-1-202E
BCP56-10
S2
Infineon Technologies
S3
Voltage regulator
Fairchild Semiconductor
LM7805
Output
C201
C202, C206
Chip capacitor, 18 pF
Capacitor, 470 µF, 50 V
ATC
ATC100B180KW500XB
SE471M050ST
Cornell Dubilier Electronics (CDE)
Taiyo Yuden
C203, C204, C205, C207, Capacitor, 10 µF
C208, C209
UMK325C7106MM-T
Pinout Diagram (top view)
V1
V2
D1
D2
Pin
Description
V1, V2
G1, G2
D1, D2
S
V
Gate
Drain
DD
S
Source (flange)
G1
G2
H-34275G-6-2_pd_10-2012
Lead connections for PTFC262808FV
Rev. 04, 2018-07-03
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFC262808FV
7
Package Outline Specifications
Package H-37275G-6/2
30.61
[1.205]
(13.72
[.540])
2X 2.22
[.087]
D
2X 45° x .64
[.025]
2X (1.27
[.050])
2X 2.29
[.090]
2X 30°
C
L
6X 4.04±0.51
[.159±.020]
D1
G1
D2
V1
V2
10.16
[.400]
9.14
[.360]
(18.24
[.718])
C
L
G2
+.38
4X R0.51
-.13
C
C
L
L
+.015
R.020
[
]
-.005
4X 12.45
[.490]
2X 26.16
[1.030]
+0.25
-0.13
4.58
+.010
.180
[
]
-.005
31.24.28
[1230±.011]
SPH 2.134
[.084]
C
L
(1.63
[0.064])
H-37275G-6/2_sl_po_03_07-25-2013
32.26
[1.270]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.127 [0.005].
4. Pins: D1, D2 – drain; G1, G2 – gate; S – source; V1, V2 – V
5. Lead thickness: 0.13 +0.051/–0.025 [0.005 +0.002/–0.001].
.
DD
6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch] max.
Rev. 04, 2018-07-03
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
PTFC262802FV
8
Revision History
Revision
Date
Data Sheet Type
Advance
Page
All
All
2
Subjects (major changes since last revision)
New product, proposed only.
01
2012-09-14
2013-07-24
2013-08-02
2013-08-06
2016-06-22
02
Data Sheet
Data Sheet
Data Sheet
Data Sheet
Product released to production. All information updated.
Order Code for Tape and Reel corrected.
Order Code for Tray corrected.
02.1
02.2
03
2
2
Operating Gate Voltage conditions corrected, maximum junction temperature raised to 225 °C,
update ordering information
04
2018-07-03
Production
All
Converted to Wolfspeed Data Sheet. Not recommended for new design
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.com
919.407.7816
Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.
Rev. 04, 2018-07-03
www.wolfspeed.com
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