PTFC262808FVV1R0XTMA1 [INFINEON]

RF Power Field-Effect Transistor,;


型号：	PTFC262808FVV1R0XTMA1
厂家：	Infineon
描述：	RF Power Field-Effect Transistor,
文件：	总8页 (文件大小：424K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PTFC262808FV

Thermally-Enhanced High Power RF LDMOS FET

280 W, 28 V, 2620 – 2690 MHz

Description

The PTFC262808FV is a 280-watt LDMOS FET intended for use in

multi-standard cellular power ampliﬁer applications in the 2620 to

2690 MHz frequency band. Features include input and output match-

ing, high gain and thermally-enhanced package. Manufactured with

Inﬁneon's advanced LDMOS process, this device provides excellent

thermal performance and superior reliability.

PTFC262808FV

Package H-37275G-6/2

Features

Two-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 1800 mA, ƒ = 2690 MHz, 3GPP

WCDMA signal, 8 dB PAR,

•ꢀ Broadband internal matching

•ꢀ Typical 1-carrier WCDMA performance, 2655 MHz,

10 MHz carrier spacing, 3.84 MHz BW

28 V, 10 dB PAR

- Output power at P

- Efﬁciency = 24%

- Gain = 18 dB

= 56 W avg.

1dB

Efficiency

- ACPR = –33 dBc @ 3.84 MHz

•ꢀ Integrated ESD protection: Human Body Model,

Gain

Class 1C (per JESD22-A114)

•ꢀ Low thermal resistance

•ꢀ RoHS-compliant

•ꢀ Capable of handling 10:1 VSWR at 28 V, 280 W

(CW) ouput power

c262808fv-gr1

Output Power (dBm)

RF Characteristics

Single-carrier WCDMA Speciﬁcations (tested in Inﬁneon production test ﬁxture)

= 28 V, I = 1800 mA, P = 56 W average, ƒ = 2655 MHz, 3GPP WCDMA signal, channel bandwidth = 3.84 MHz,

OUT

peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min

16.5

Typ

18.0

Max

—

Unit

Gain

Drain Efficiency

Adjacent Channel Power Ratio

h_D

—

ACPR

—

–33

–30

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 8

Rev. 03, 2016-06-22

PTFC262808FV

DC Characteristics (single side)

Characteristic

Conditions

Symbol

Min

—

Typ

—

Max

—

Unit

Drain-Source Breakdown Voltage

Drain Leakage Current

= 0 V, I = 10 mA

(BR)DSS

= 28 V, V = 0 V

—

1.0

10.0

µA

DSS

GSS

= 63 V, V = 0 V

—

Gate Leakage Current

On-State Resistance

Operating Gate Voltage

= 10 V, V = 0 V

—

= 10 V, V = 0.1 V

—

0.05

2.6

—

DS(on)

= 28 V, I

= 1800 mA

—

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Operating Voltage

DSS

–6 to +10

0 to +32

225

Junction Temperature

Storage Temperature Range

°C

STG

–65 to +150

0.20

°C

Thermal Resistance (T

= 70°C, 200 W CW)

°C/W

CASE

Ordering Information

Type and Version

PTFC262808FV V1 R0

PTFC262808FV V1 R250

Order Code

Package and Description

Shipping

PTFC262808FVV1R0XTMA1

PTFC262808FVV1R250XTMA1

H-37275G-6/2, ceramic open-cavity, earless

Tape & Reel, 50 pcs

Tape & Reel, 250 pcs

Data Sheet

2 of 8

Rev. 03, 2016-06-22

PTFC262808FV

Typical Performance (data taken in Infineon production test fixture)

Two-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 1800 mA, ƒ = 2690 MHz, 3GPP

WCDMA signal, 8 dB PAR,

V_DD= 28 V, I_DQ= 1800 mA,

3GPP WCDMA signal, 8 dB PAR,

10 MHz carrier spacing, 3.84 MHz BW

-20

-25

-30

-35

-40

-45

-50

-15

-25

-35

-45

IMD Low

IMD Up

ACPR

2620 MHz

2655 MHz

2690 MHz

Efficiency

IMD Up

IMD Low

c262802fv-gr2

c262802fv-gr3

Output Power (dBm)

Pulsed CW Performance

Gain & Input Return Loss, single side

V_DD= 28 V, I_DQ= 1.8 A

V_DD= 28 V, I_DQ= 650 mA

IRL

Gain

-5

-10

-15

-20

-25

-30

2620 MHz

2655 MHz

2690 MHz

Gain

Efficiency

c262802fv-gr6

c262802fv-gr4

2450

2550

2650

2750

2850

Output Power (dBm)

Frequency (MHz)

Data Sheet

3 of 8

Rev. 03, 2016-06-22

PTFC262808FV

Typical Performance (cont.)

Pulsed CW Performance

at selected V_DD

I_DQ= 1800 mA, ƒ = 2690 MHz

V_DD= 32 V

_DD= 28 V

_DD= 24 V

Efficiency

Gain

c262802fv-gr5

Output Power (dBm)

Broadband Circuit Impedance

Z Source

Z Load

Frequency

MHz

Z Source W

Z Load W

2620

2.88

2.99

3.10

–1.58

–1.55

–1.52

0.55

0.53

0.52

–2.45

–2.39

–2.33

2655

2690

Data Sheet

4 of 8

Rev. 03, 2016-06-22

PTFC262808FV

Reference Circuit, tuned for 2620 – 2690 MHz

DUT

PTFC262808FV

Test Fixture Part No.

PCB

LTN/PTFC262808FV V1

Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, ε_r= 3.66

Find Gerber ﬁles for this test ﬁxture on the Inﬁneon Web site at (http://www.inﬁneon.com/rfpower)

RO4350, .020 (60)

R802

C801

C802

R803

VDD

C207

C208

C205

R104

R801

R102

R804

R101

C206

C102

C108

C106

C104

C103

C201

RF_IN

RF_OUT

C107

C101

R103

C209

C105

R105

C202

C204

C203

VDD

PTFC262808FV_OUT_02

2 8 2 8 0 8 f v _ c d _ 7 - 1 9 - 1 3

PTFC262808FV_IN_02

Reference circuit assembly diagram (not to scale)

Component Information

Component

Description

Suggested Manufacturer

P/N

Input

C101, C102

C103, C104

C105, C106

C107, C108

C801, C802, C803

R101, R102

Chip capacitor, 10 pF

Chip capacitor, 18 pF

Chip capacitor, 0.4 pF

Capacitor, 10 µF

ATC

ATC100A100JW500XB

ATC100A180JW150XB

ATC100B0R4CW500XB

LLL31BC70G106MA01L

ECJ-1VB1H102K

ATC

Murata Electronics North America

Panasonic

Chip capacitor, 1,000 pF

Resistor, 10 W

Panasonic Electronic Components

ERJ-3GEYJ100V

(table cont. next page)

Data Sheet

5 of 8

Rev. 03, 2016-06-22

PTFC262808FV

Reference Circuit (cont.)

Component Information (cont.)

Component

Description

Suggested Manufacturer

P/N

Input (cont.)

R102, R103, R104, R801, Resistor, 10 W

Panasonic Electronic Components

ERJ-8GEYJ100V

R802

R803

R804

Resistor, 1.3k W

Resistor, 1.2k W

Potentiometer, 2k W

Transistor

Panasonic Electronic Components

Bourns Inc.

ERJ-3GEYJ132V

ERJ-3GEYJ122V

3224W-1-202E

BCP56-10

Inﬁneon Technologies

Voltage regulator

Fairchild Semiconductor

LM7805

Output

C201

C202, C206

Chip capacitor, 18 pF

Capacitor, 470 µF, 50 V

ATC

ATC100B180KW500XB

SEK471M050ST

Cornell Dubilier Electronics (CDE)

Taiyo Yuden

C203, C204, C205, C207, Capacitor, 10 µF

C208, C209

UMK325C7106MM-T

Pinout Diagram (top view)

Description

V1, V2

G1, G2

D1, D2

Gate

Drain

Source (ﬂange)

H-34275G-6-2_pd_10-10-2012

Lead connections for PTFC262808FV

Data Sheet

6 of 8

Rev. 03, 2016-06-22

PTFC262808FV

Package Outline Specifications

Package H-37275G-6/2

30.61

[1.205]

(13.72

[.540])

2X 2.22

[.087]

2X 45° x .64

[.025]

2X (1.27

[.050])

2X 2.29

[.090]

2X 30°

6X 4.04±0.51

[.159±.020]

10.16

[.400]

9.14

[.360]

(18.24

[.718])

+.38

4X R0.51

-.13

+.015

R.020

[

]

-.005

4X 12.45

[.490]

2X 26.16

[1.030]

+0.25

-0.13

4.58

+.010

.180

[

]

-.005

31.24±0.28

[1.230±.011]

SPH 2.134

[.084]

(1.63

[0.064])

H-37275G-6/2_sl_po_03_07-25-2013

32.26

[1.270]

Diagram Notes—unless otherwise speciﬁed:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. All tolerances 0.127 [0.005].

4. Pins: D1, D2 – drain; G1, G2 – gate; S – source; V1, V2 – V

5. Lead thickness: 0.13 +0.051/–0.025 [0.005 +0.002/–0.001].

6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch] max.

Find the latest and most complete information about products and packaging at the Inﬁneon Internet page

(http://www.inﬁneon.com/rfpower)

Data Sheet

7 of 8

Rev. 03, 2016-06-22

PTFC262808FV V1

Revision History

Revision Date

Data Sheet

Page

all

Subjects (major changes since last revision)

New product, proposed only.

2012-09-14 Advance

2013-07-24 Data Sheet

2013-08-02 Data Sheet

2013-08-06 Data Sheet

2016-06-22 Data Sheet

Product released to production. All information updated.

Order Code for Tape and Reel corrected.

Order Code for Tray corrected.

02.1

02.2

Operating Gate Voltage conditions corrected, maximum junction tempera-

ture raised to 225 °C, update ordering information

We Listen toYour Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

(highpowerRF@inﬁneon.com)

To request other information, contact us at:

+1 877 465 3667 (1-877-GO-LDMOS) USA

or +1 408 776 0600 International

Edition 2016-06-22

Published by

Inﬁneon Technologies AG

85579 Neubiberg, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.

With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the

application of the device, Inﬁneon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Inﬁneon Technologies Ofﬁce (www.inﬁneon.com/rfpower).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question,

please contact the nearest Inﬁneon Technologies Ofﬁce.

Inﬁneon Technologies components may be used in life-support devices or systems only with the express written approval of In-

ﬁneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device

or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be

implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be endangered.

Data Sheet

8 of 8

Rev. 03, 2016-06-22

PTFC262808FVV1R0XTMA1 [INFINEON]

相关型号：

PTFC262808FVV1R250XTMA1

PTFC262808SV

PTFC262808SVV1R250

PTFC262808SVV1R250XTMA1

PTFC270051M

PTFC270051M

PTFC270051MV2R1K

PTFC270101M

PTFC270101M

PTFC270101MV1R1K

PTFC270101MV1R1KXUMA1

PTFC270101M_15