PTFC262808SV [INFINEON]

Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 â 2690 MHz;


型号：	PTFC262808SV
厂家：	Infineon
描述：	Thermally-Enhanced High Power RF LDMOS FET 280 W, 28 V, 2620 â 2690 MHz
文件：	总8页 (文件大小：180K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PTFC262808SV

Thermally-Enhanced High Power RF LDMOS FET

280 W, 28 V, 2620 – 2690 MHz

Description

The PTFC262808SV is a 280-watt LDMOS FET intended for use in

multi-standard cellular power ampliﬁer applications in the 2620 to

2690 MHz frequency band. Features include input and output match-

ing, high gain and thermally-enhanced package. Manufactured with

Inﬁneon's advanced LDMOS process, this device provides excellent

thermal performance and superior reliability.

PTFC262808SV

Package H-37275G-6/2

with formed leads

Features

Two-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 1800 mA, ƒ = 2690 MHz,

3GPP WCDMA signal, 8 dB PAR,

•

Broadband internal matching

Typical CW pulsed performance, 2620 MHz, 28 V

10 MHz carrier spacing, 3.84 MHz BW

- Output power at P

- Efﬁciency = 52%

- Gain = 18 dB

= 280 W

1dB

•

Typical 1-carrier WCDMA performance, 2655 MHz,

28 V

Gain

- Output power at P

- Efﬁciency = 24%

- Gain = 18.0 dB

= 56 W avg.

1dB

Efficiency

•

Integrated ESD protection: Human Body Model,

Class 1C (per JESD22-A114)

•

Low thermal resistance

RoHS-compliant

c262808sv-gr1

Capable of handling 10:1 VSWR at 28 V, 280 W

(CW) ouput power

Output Power (dBm)

RF Characteristics

Single-carrier WCDMA Speciﬁcations (tested in Inﬁneon production test ﬁxture)

= 28 V, I = 1800 mA, P = 56 W average, ƒ = 2655 MHz, 3GPP WCDMA signal, channel bandwidth = 3.84 MHz,

OUT

peak/average = 10 dB @ 0.01% CCDF

Characteristic

Symbol

Min

16.5

Typ

18.0

Max

—

Unit

Gain

Drain Efficiency

Adjacent Channel Power Ratio

η_D

—

ACPR

—

–33

–30

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Data Sheet 1 of 8

Rev. 02.1, 2013-08-02

PTFC262808SV

DC Characteristics (single side)

Characteristic

Conditions

Symbol

Min

—

Typ

—

Max

—

Unit

Drain-Source Breakdown Voltage

Drain Leakage Current

= 0 V, I = 10 mA

(BR)DSS

= 28 V, V = 0 V

—

1.0

10.0

—

µA

DSS

= 63 V, V = 0 V

—

On-State Resistance

Operating Gate Voltage

Gate Leakage Current

= 10 V, V = 0.1 V

DS(on)

—

0.05

2.65

—

= 28 V, I

= 1.45 A

—

= 10 V, V = 0 V

GSS

—

µA

Maximum Ratings

Parameter

Symbol

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Operating Voltage

DSS

–6 to +10

0 to +32

200

Junction Temperature

Storage Temperature Range

°C

–65 to +150

0.20

°C

STG

Thermal Resistance (T

= 70°C, 200 W CW)

°C/W

CASE

Ordering Information

Type and Version

Order Code

Package and Description

Shipping

PTFC 262808SV V1 R250 PTFC262808SVV1R250XTMA1

H-37275G-6/2, ceramic open-cavity, formed leads,

earless

Tape & Reel, 250 pcs

Data Sheet

2 of 8

Rev. 02.1, 2013-08-02

PTFC262808SV

Typical Performance (data taken in a reference design fixture)

Pulsed CW Performance

(gain and input return loss)

V_DD= 28 V, I_DQ= 650 mA

Pulsed CW Performance

V_DD= 28 V, I_DQ= 1.8 A

-5

IRL

-10

-15

-20

-25

-30

-35

-40

Gain

2620 MHz

2655 MHz

2690 MHz

Gain

Efficiency

c262808sv-gr7

c262808sv-gr5

2300 2400 2500 2600 2700 2800 2900 3000

Output Power (dBm)

Frequency (MHz)

Two-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 1800 mA,

3GPP WCDMA signal, 8 dB PAR,

10 MHz carrier spacing, 3.84 MHz BW

Two-carrier WCDMA Drive-up

V_DD= 28 V, I_DQ= 1800 mA, ƒ = 2690 MHz,

3GPP WCDMA signal, 8 dB PAR,

10 MHz carrier spacing, 3.84 MHz BW

-20

-25

-30

-35

-40

-45

-50

2620 MHz

2655 MHz

2690 MHz

IM3L

IM3U

ACPR

Eff

-25

-30

-35

-40

-45

IMD Up

IMD Low

c262808sv-gr3

c262808sv-gr2

Output Power (dBm)

Data Sheet

3 of 8

Rev. 02.1, 2013-08-02

PTFC262808SV

Typical Performance (cont.)

Pulsed CW Performance

at selected supply voltages

I_DQ= 1800 mA, ƒ = 2690 MHz

V_DD= 32 V

V_DD= 28 V

V_DD= 24 V

Gain

Efficiency

48 50

Output Power (dBm)

c262808sv-gr6 10

Broadband Circuit Impedance

Frequency

MHz

Z Source 

Z Load 

Z Source

Z Load

2620

2.07

1.98

1.91

–2.45

–2.39

–2.33

0.69

0.68

0.66

–4.22

–4.19

–4.08

2655

2690

Data Sheet

4 of 8

Rev. 02.1, 2013-08-02

PTFC262808SV

Reference Circuit, tuned for 2620 – 2690 MHz

DUT

PTFC262808SV

Test Fixture Part No.

PCB

LTN/PTFC262808SV V1

Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, ε_r= 3.66

Find Gerber ﬁles for this test ﬁxture on the Inﬁneon Web site at (http://www.inﬁneon.com/rfpower)

R802 C801 C803

RO4350, .020

RO4350, .020 (60)

R801

R107

R803

(60)

C802

C202 C206

C205

R804

VDD

R108

R109

R103

R102

C207

C102

C103

C201

C105

C101

C212

C203

RF_IN

RF_OUT

C107

C106

C204

C104

C108

VDD

C209

C208

R104

R101

C211

C210

PTFC262808SV_OUT_01

PTFC262808SV_IN_1A

2 8 2 8 0 8 s v _ c d _ 6 - 2 8 - 1 3

Reference circuit assembly diagram (not to scale)

Component Information

Component

Description

Suggested Manufacturer

P/N

Input

C101, C102, C107, C108

C103, C104

C105

Chip capacitor, 18 pF

Capacitor, 10 µF

ATC

ATC800A180JW250X

Murata Electronics North America

LLL31BC70G106MA01L

ATC100B0R4CW150X

ATC100B0R7CW150X

ECJ-1VB1H102K

Chip capacitor, 0.4 pF

Chip capacitor, 0.7 pF

Chip capacitor, 1,000 pF

Resistor, 10 Ω

ATC

C106

ATC

C801, C802, C803

R101, R102

Panasonic Electronic Components

ERJ-3GEYJ100V

(table cont. next page)

Rev. 02.1, 2013-08-02

Data Sheet

5 of 8

PTFC262808SV

Reference Circuit (cont.)

Component Information (cont.)

Component

Input (cont.)

R103, R104

R107, R109

R108

Description

Suggested Manufacturer

P/N

Panasonic Electronic Components

Bourns Inc.

ERJ-8GEYJ100V

ERJ-8GEY0R00V

ERJ-3GEY0R00V

ERJ-8GEYJ1R0V

ERJ-8GEYJ102V

ERJ-3GEYJ132V

ERJ-3GEYJ122V

3224W-1-202E

BCP56-10

Resistor, 10 Ω

Resistor, 0.0 Ω

Resistor, 1 Ω

R801

R802

Resistor, 1k Ω

Resistor, 1.3k Ω

Resistor, 1.2k Ω

Potentiometer, 2k Ω

Transistor

R803

R804

Inﬁneon Technologies

Voltage regulator

Fairchild Semiconductor

LM7805

Output

C201, C204

Chip capacitor, 0.2 pF

ATC

ATC100B0R2BW150X

UMK325C7106MM-T

C202, C206, C207, C208, Capacitor, 10 µF

C209, C210

Taiyo Yuden

C203, C212

C205, C211

Chip capacitor, 18 pF

Capacitor, 220 µF, 35 V

ATC

ATC800A180JW250X

EEE-FP1V221AP

Panasonic Electronic Components

Pinout Diagram

Description

V1, V2

G1, G2

D1, D2

Gate

Drain

Source (ﬂange)

H-34275G-6-2_gw_pd_10-10-2012

Data Sheet

6 of 8

Rev. 02.1, 2013-08-02

PTFC262808SV

Package Outline Specifications

Package H-37275G-6/2

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Diagram Notes—unless otherwise speciﬁed:

1. Interpret dimensions and tolerances per ASME Y14.5M-1994.

2. Primary dimensions are mm. Alternate dimensions are inches.

3. All tolerances 0.127 [0.005].

4. Pins: D1, D2 – drain; G1, G2 – gate; S – source; V1, V2 – V

5. Lead thickness: 0.13 +0.051/–0.025 [0.005 +0.002/–0.001].

6. Gold plating thickness: 1.14 0.38 micron [45 15 microinch] max.

Find the latest and most complete information about products and packaging at the Inﬁneon Internet page

(http://www.inﬁneon.com/rfpower)

Data Sheet

7 of 8

Rev. 02.1, 2013-08-02

PTFC262808SV V1

Revision History: 2013-08-02

Data Sheet

Previous Version: 2013-07-24, Data Sheet; 2012-08-09, Advance Speciﬁcation

Page

all

Subjects (major changes since last revision)

Product released to production, information complete and current.

Typos corrected.

1, 2, 6

We Listen toYour Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to:

(highpowerRF@inﬁneon.com)

To request other information, contact us at:

+1 877 465 3667 (1-877-GO-LDMOS) USA

or +1 408 776 0600 International

Edition 2013-08-02

Published by

Inﬁneon Technologies AG

85579 Neubiberg, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.

With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the

application of the device, Inﬁneon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Inﬁneon Technologies Ofﬁce (www.inﬁneon.com/rfpower).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in question,

please contact the nearest Inﬁneon Technologies Ofﬁce.

Inﬁneon Technologies components may be used in life-support devices or systems only with the express written approval of In-

ﬁneon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device

or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be

implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be endangered.

Data Sheet

8 of 8

Rev. 02.1, 2013-08-02

PTFC262808SV [INFINEON]

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