IRF7322D1TR [INFINEON]
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.062ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8;
| 型号： | IRF7322D1TR |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.062ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 晶体 肖特基二极管 晶体管 功率场效应晶体管 开关 脉冲 光电二极管 |
| 文件： | 总8页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 91705A
IRF7322D1
FETKY MOSFET / Schottky Diode
● Co-packaged HEXFET® Power MOSFET
and Schottky Diode
● Ideal For Buck Regulator Applications
● P-Channel HEXFET
● Low VF Schottky Rectifier
● Generation 5 Technology
● SO-8 Footprint
1
2
3
4
8
7
K
K
A
VDSS = -20V
A
R
DS(on) = 0.058Ω
6
5
S
D
D
G
Schottky Vf = 0.39V
Top View
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
S O -8
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
-5.3
-4.3
A
Pulsed Drain Current ➀
-43
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
2.0
W
1.3
Linear Derating Factor
16
mW/°C
V
VGS
Gate-to-Source Voltage
± 12
dv/dt
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
-5.0
V/ns
°C
TJ, TSTG
-55 to +150
Thermal Resistance Ratings
Parameter
Maximum
Units
RθJA
Junction-to-Ambient ➃
62.5
°C/W
Notes:
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
➁ ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
➂ Pulse width ≤ 300µs; duty cycle ≤ 2%
➃ Surface mounted on FR-4 board, t ≤ 10sec.
www.irf.com
1
3/17/99
2
IRF7322D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
RDS(on)
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = -250µA
VGS = -4.5V, ID = -2.9A
VGS = -2.7V, ID = -1.5A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -1.5A
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 55°C
VGS = -12.0V
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
-20
—
—
—
V
0.049 0.062
0.082 0.098
Ω
—
VGS(th)
gfs
Gate Threshold Voltage
-0.70
—
—
5.9
—
—
—
V
S
Forward Transconductance
Drain-to-Source Leakage Current
IDSS
—
-1.0
-25
100
-100
29
µA
nA
—
—
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
—
—
—
—
VGS = 12.0V
Qg
—
19
ID = -2.9A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
—
4.0 6.1
nC VDS = -16V
VGS = -4.5V (see figure 6) ➂
—
7.7
15
12
22
60
63
73
—
—
—
—
VDD = -10V
ID = -2.9A
RG = 6.0Ω
RD = 3.4Ω
VGS = 0V
—
40
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
—
42
—
49
➂
Ciss
Coss
Crss
Input Capacitance
—
780
470
240
Output Capacitance
—
VDS = -15V
Reverse Transfer Capacitance
—
ƒ = 1.0MHz (see figure 5)
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
—
—
—
—
—
—
—
—
47
49
-2.5
-21
-1.2
71
A
ISM
VSD
trr
V
TJ = 25°C, IS = -2.9A, VGS = 0V
TJ = 25°C, IF = -2.9A
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
ns
nC
Qrr
73
di/dt = 100A/µs ➂
Schottky Diode Maximum Ratings
Parameter
Max. Units.
Conditions
IF(av)
Max. Average Forward Current
2.7
2
50% Duty Cycle. Rectangular Wave, TA = 25°C
A
See Fig. 14
TA = 70°C
ISM
Max. peak one cycle Non-repetitive
Surge current
120
11
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
A
Schottky Diode Electrical Specifications
Parameter
Max. Units
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 20V TJ = 25°C
TJ = 125°C
VFM
Max. Forward voltage drop
0.50
0.62
V
0.39
0.57
IRM
Max. Reverse Leakage current
0.02
mA
8
Ct
Max. Junction Capacitance
Max. Voltage Rate of Charge
92
pF
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
dv/dt
2
3600 V/ µs
www.irf.com
2
IRF7322D1
Power Mosfet Characteristics
100
100
10
1
VGS
VGS
TOP
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
TOP
-7.50V
-4.50V
-4.00V
-3.50V
-3.00V
-2.70V
-2.00V
BOTTOM -1.50V
BOTTOM -1.50V
10
-1.50V
1
-1.50V
20µs PULSE WIDTH
°
20µs PULSE WIDTH
°
T = 150 C
T = 25 C
J
J
0.1
0.1
0.1
0.1
1
10
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
I
= -2.9A
D
°
T = 25 C
J
°
T = 150 C
J
10
V
= -10V
DS
20µs PULSE WIDTH
V
= -4.5V
G S
1
1.5
A
2.0
2.5
3.0
3.5 4.0 4.5
5.0
-60
-40
-20
J
0
20
40
60
80
100 120 140 160
-V , Gate-to-Source Voltage (V)
GS
T
, Junction Tem perature (°C)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
www.irf.com
3
IRF7322D1
Power Mosfet Characteristics
1400
1200
1000
800
10
V
C
C
C
= 0V ,
f = 1M Hz
I
= -2.9A
G S
iss
D
= C
= C
= C
+ C
+ C
,
C
SHORTED
gs
gd
ds
gd
ds
rss
oss
V
= -16V
D S
gd
8
6
4
2
0
C
iss
C
oss
600
400
C
rss
200
0
1
A
A
10
100
0
5
10
15
20
25
30
-V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
100us
1ms
°
T = 25 C
J
10ms
°
= 25 C
T
C
°
T
= 150 C
J
Single Pulse
V
= 0 V
GS
0.1
0.2
0.1
1
10
100
0.4
0.6
0.8
1.0
1.2
1.4
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
www.irf.com
IRF7322D1
Power Mosfet Characteristics
100
10
1
0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
t
2
Notes:
1. Duty factor D =
SINGLE PULSE
(THERMAL RESPONSE)
t
/ t
1
2
2. Peak T = P
J
x Z
+ T
10
DM
thJA
A
0.1
0.00001
0.0001
0.001
0.01
0.1
1
100
t , Rectangular Pulse Duration (sec)
1
Fig9. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
0.8
0.6
0.4
0.2
0.0
0.08
0.07
V
= -2.7V
GS
0.06
0.05
0.04
0.03
I
= -5.3A
D
V
= -4.5V
GS
A
A
0
4
8
12
16
20
0.0
2.0
4.0
6.0
8.0
V G S , Gate-to-Source Voltage (V)
-I , Drain Current (A)
D
Fig 10. Typical On-Resistance Vs. Drain
Fig 11. Typical On-Resistance Vs. Gate
Current
Voltage
www.irf.com
5
IRF7322D1
Schottky Diode Characteristics
10
1
TJ = 150°C
Fig. 13 - Typical Values of Reverse
TJ = 125°C
Current Vs. Reverse Voltage
TJ
=
25°C
160
140
120
100
80
V r = 20 V
thJA
Sq uare wave
R
= 62.5°C /W
DC
D = 3/4
D = 1/2
D =1/3
D = 1/4
D = 1/5
60
0.1
0.0
0.2
0.4
0.6
0.8
1.0
40
Forward Voltage Drop - VF(V)
20
A
0
Fig. 12 - Typical Forward Voltage Drop Characteristics
0.0
0.5
1.0
1.5
2.0
2.5
3.0
A vera ge F orw ard C urrent - I F(AV) (A )
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6
www.irf.com
IRF7322D1
SO-8 Package Details
INCH ES
M ILLIM ET ERS
D IM
D
M IN
M AX
.0688
.0098
.018
M IN
1.35
0.10
0.36
0.19
4.80
3.81
M AX
1.75
0.25
0.46
0.25
4.98
3.99
5
- B -
θ
A
.0532
.0040
.014
A1
B
8
1
7
2
6
3
5
4
5
H
E
C
D
E
.0075
.189
.0098
.196
0.25 (.010)
M
A M
- A -
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K x 45°
θ
6X
e1
e1
H
K
0.635 BASIC
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C -
0.10 (.004)
6
C
8X
L
8X
L
A1
B
8X
θ
0.25 (.010)
M
C A S B S
RECOM MENDED FOOTPRINT
NOTES:
0.72 (.028 )
8X
1. DIM ENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIM ENSION : INCH.
3. DIM ENSIONS ARE SHOW N IN MILLIMETERS (INCHES).
4. OUTLINE CONFORM S TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 )
1.78 (.070)
8X
5
DIMENSION DOES NOT INCLUDE M OLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
1.27 ( .050 )
3X
Part Marking
www.irf.com
7
IRF7322D1
TER M INAL NUM BER 1
Tape and Reel
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED D IRECTIO N
NOTES:
1. CONTROLLING DIMENSION : MILLIM ETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIM ETERS(INCHES).
3. OUTLINE CONFORM S TO EIA-481 & EIA-541.
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
NO TES :
1. CO NTRO LLING D IM ENSIO N : M ILLIM ETER .
2. O U TLINE C O NFO RM S TO EIA-481 & EIA-541.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 221 8371
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
http://www.irf.com/
Data and specifications subject to change without notice . 3/99
8
www.irf.com
相关型号：
IRF7322D1TRPBF
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.062ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
INFINEON
IRF7325TRPBF
Small Signal Field-Effect Transistor, 7.8A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS AND REACH COMPLIANT, SOP-8
INFINEON
©2020 ICPDF网 联系我们和版权申明