IRF7326D2 [INFINEON]
FETKY MOSFET / Schottky Diode; FETKY MOSFET /肖特基二极管
| 型号： | IRF7326D2 |
| 厂家： | 
Infineon |
| 描述： | FETKY MOSFET / Schottky Diode |
| 文件： | 总8页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93763
IRF7326D2
FETKY MOSFET / Schottky Diode
● Co-packaged HEXFET® Power MOSFET
and Schottky Diode
● Ideal For Buck Regulator Applications
● P-Channel HEXFET
● Low VF Schottky Rectifier
● Generation 5 Technology
● SO-8 Footprint
1
2
3
4
8
7
K
K
A
VDSS = -30V
A
R
DS(on) = 0.10Ω
6
5
S
D
D
G
Schottky Vf = 0.52V
Top View
Description
The FETKY family of co-packaged MOSFETs and Schottky diodes offers the
designer an innovative, board space saving solution for switching regulator
and power management applications. Generation 5 HEXFET Power
MOSFETs utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. Combinining this technology with
International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable
electronics applications.
S O -8
The SO-8 has been modified through a customized leadframe for
enhanced thermal characteristics. The SO-8 package is designed for vapor
phase, infrared or wave soldering techniques.
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
Units
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current ➃
-3.6
-2.9
A
Pulsed Drain Current ➀
Power Dissipation ➃
-29
PD @TA = 25°C
PD @TA = 70°C
2.0
W
1.3
Linear Derating Factor
16
mW/°C
V
VGS
Gate-to-Source Voltage
± 20
dv/dt
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
-5.0
V/ns
°C
TJ, TSTG
-55 to +150
Thermal Resistance Ratings
Parameter
Maximum
Units
RθJA
Junction-to-Ambient ➃
62.5
°C/W
Notes:
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 9)
➁ ISD ≤ -1.8A, di/dt ≤ -90A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
➂ Pulse width ≤ 300µs; duty cycle ≤ 2%
➃ Surface mounted on FR-4 board, t ≤ 10sec.
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1
8/19/99
IRF7326D2
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
RDS(on)
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = -250µA
VGS = -10V, ID = -1.8A
VGS = -4.5V, ID = -1.5A
VDS = VGS, ID = -250µA
VDS = -24V, ID = -1.8A
VDS = -24V, VGS = 0V
VDS = -24V, VGS = 0V, TJ = 55°C
VGS = -20V
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
-30
—
—
-1.0
2.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
0.073 0.10
0.13 0.16
Ω
VGS(th)
gfs
Gate Threshold Voltage
—
—
—
—
V
S
Forward Transconductance
Drain-to-Source Leakage Current
IDSS
—
-1.0
-25
100
-100
25
µA
nA
—
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
—
—
VGS = 20V
Qg
—
ID = -1.8A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
—
2.9
9.0
—
nC VDS = -24V
VGS = -10V (see figure 6) ➂
—
11
17
25
18
440
200
93
VDD = -15V
—
ID = -1.8A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
—
RG = 6.0Ω
—
RD = 8.2Ω ➂
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
—
Output Capacitance
—
VDS = -25V
Reverse Transfer Capacitance
—
ƒ = 1.0MHz (see figure 5)
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
—
—
—
—
—
—
—
—
53
66
-2.5
-29
-1.0
80
A
ISM
VSD
trr
V
TJ = 25°C, IS = -1.8A, VGS = 0V
TJ = 25°C, IF = -1.8A
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
ns
nC
Qrr
99
di/dt = 100A/µs ➂
Schottky Diode Maximum Ratings
Parameter
Max. Units
Conditions
If (av)
ISM
Max. Average Forward Current
2.8
50% Duty Cycle. Rectangular Wave, Tc = 25°C
50% Duty Cycle. Rectangular Wave, Tc = 70°C
A
1.8
Max. peak one cycle Non-repetitive
Surge current
200
5µs sine or 3µs Rect. pulse
Following any rated
20
10ms sine or 6ms Rect. pulse load condition &
with Vrrm applied
A
Schottky Diode Electrical Specifications
Parameter
Max. Units
Conditions
If = 3.0, Tj = 25°C
Vfm
Max. Forward voltage drop
0.57
0.77
V
If = 6.0, Tj = 25°C
0.52
If = 3.0, Tj = 125°C
0.79
If = 6.0, Tj = 125°C
.
Irm
Max. Reverse Leakage current
0.30
mA
Vr = 30V
Tj = 25°C
37
Tj = 125°C
Ct
Max. Junction Capacitance
Max. Voltage Rate of Charge
310 pF
4900 V/µs
Vr = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated Vr
dv/dt
( HEXFET is the reg. TM for International Rectifier Power MOSFET's )
2
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IRF7326D2
Power Mosfet Characteristics
100
10
1
100
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
TOP
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTTOM - 4.5V
BOTTOM - 4.5V
10
-4.5V
-4.5V
20µs P ULSE W IDTH
20µs P ULSE W IDTH
T
J
= 25°C
T
= 150°C
J
A
100
1
A
0.1
1
10
0.1
1
10
100
-V
DS
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.0
I
= -3.0A
D
TJ = 25°C
1.5
1.0
0.5
0.0
TJ = 150°C
10
VDS = -15V
20µs PULSE W IDTH
V
= -10V
G S
1
10 A
A
4
5
6
7
8
9
-60
-40
-20
J
0
20
40
60
80
100 120 140 160
-VG S , Gate-to-Source Voltage (V)
T
, Junction Tem perature (°C)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRF7326D2
Power Mosfet Characteristics
1000
20
I
V
= -3.0A
= -24V
V
= 0V,
f = 1M Hz
D
G S
iss
rss
oss
C
C
C
= C
+ C
+ C
,
C
S HOR TED
DS
g s
gd
ds
= C
= C
gd
ds
800
600
400
200
0
16
12
8
gd
C
C
iss
oss
C
rss
4
FO R TES T CIRCUIT
SE E FIG URE 12
0
A
A
1
10
100
0
5
10
15
20
25
-V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T
= 150°C
J
100us
1ms
T
= 25°C
J
1
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
10ms
V
= 0V
G S
A
0.1
0.0
0.3
0.6
0.9
1.2
1.5
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V
, Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7326D2
Power Mosfet Characteristics
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T = P
J
x Z
+ T
thJA A
DM
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig9. MaximumEffectiveTransientThermalImpedance,Junction-to-Ambient
0.50
0.40
0.30
0.20
0.10
0.00
0.14
0.12
0.10
VGS = -4.5V
ID = -3.6A
VGS = -10V
0.08
0.06
0
2
4
6
8
10
12
14
4
6
8
10
12
14
16
-I , Drain Current (A)
-V
GS
, Gate-to-Source Voltage (V)
D
Fig 10. Typical On-Resistance Vs. Drain
Fig 11. Typical On-Resistance Vs. Gate
Current
Voltage
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5
IRF7326D2
Schottky Diode Characteristics
1 0 0
1 0
100
TJ = 150°C
125°C
100°C
1
75°C
50°C
0.1
0.01
10
25°C
TJ = 150°C
TJ = 125°C
TJ 25°C
A
0. 001
0
5
1 0
1 5
2 0
2 5
3 0
Reverse Voltage - V R (V)
=
Fig. 13 - Typical Values of
Reverse Current Vs. Reverse
Voltage
1
1 6 0
V r = 80% R ated
= 6 2.5°C/W
R
thJA
Sq uare wave
1 4 0
1 2 0
1 0 0
8 0
D C
0.1
6 0
0.0
0.2
0.4
0.6
0.8
1.0
D
D
D
D
D
= 3/4
= 1/2
=1/3
= 1/4
= 1/5
4 0
Forward Voltage Drop - VF (V)
2 0
A
0
Fig. 12 - Typical Forward Voltage Drop
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Characteristics
Average Forw ard Current - I F(AV) (A)
Fig.14 - Maximum Allowable Ambient
Temp. Vs. Forward Current
6
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IRF7326D2
SO-8 Package Details
INCH ES
M ILLIM ET ERS
D IM
D
M IN
M AX
.0688
.0098
.018
M IN
1.35
0.10
0.36
0.19
4.80
3.81
M AX
1.75
0.25
0.46
0.25
4.98
3.99
5
- B -
θ
A
.0532
.0040
.014
A1
B
8
1
7
2
6
3
5
4
5
H
E
C
D
E
.0075
.189
.0098
.196
0.25 (.010)
M
A M
- A -
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K x 45°
θ
6X
e1
e1
H
K
0.635 BASIC
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C -
0.10 (.004)
6
C
8X
L
8X
L
A1
B
8X
θ
0.25 (.010)
M
C A S B S
RECOM MENDED FOOTPRINT
NOTES:
0.72 (.028 )
8X
1. DIM ENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIM ENSION : INCH.
3. DIM ENSIONS ARE SHOW N IN MILLIMETERS (INCHES).
4. OUTLINE CONFORM S TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 )
1.78 (.070)
8X
5
DIMENSION DOES NOT INCLUDE M OLD PROTRUSIONS
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
6
1.27 ( .050 )
3X
Part Marking
(IRF7101 example )
D ATE C O DE (YW W )
L AST DIG IT O F TH E YEAR
Y
=
a
W W
= W EEK
312
F7 10 1
INTER N ATIO N AL
R EC TIF IER
L OG O
PART NUM BER
TO P
XXXX
W AF ER
L OT C O DE
(L AST
4 DIG ITS)
BO TTO M
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7
IRF7326D2
TER M INAL NUM BER 1
Tape and Reel
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED D IRECTIO N
NOTES:
1. CONTROLLING DIMENSION : MILLIM ETER.
2. ALL DIMENSIONS ARE SHOW N IN MILLIM ETERS(INCHES).
3. OUTLINE CONFORM S TO EIA-481 & EIA-541.
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
NO TES :
1. CO NTRO LLING D IM ENSIO N : M ILLIM ETER .
2. O U TLINE C O NFO RM S TO EIA-481 & EIA-541.
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Data and specifications subject to change without notice.
8/99
8
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