首页 |元器件品牌

IRF7329TRPBF [INFINEON]

Trench Technology; 沟槽技术
IRF7329TRPBF
型号： IRF7329TRPBF
厂家： Infineon    Infineon
描述：

Trench Technology
沟槽技术

晶体 小信号场效应晶体管 开关 光电二极管 PC
文件： 总9页 (文件大小：179K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
PD - 95042  
IRF7329PbF  
HEXFET® Power MOSFET  
l
l
l
l
l
l
Trench Technology  
Ultra Low On-Resistance  
Dual P-Channel MOSFET  
Low Profile (<1.8mm)  
Available in Tape & Reel  
Lead-Free  
VDSS  
RDS(on) max (mW)  
17@VGS = -4.5V  
21@VGS = -2.5V  
30@VGS = -1.8V  
ID  
±9.2A  
±7.4A  
±4.6A  
-12V  
Description  
New P-Channel HEXFET® power MOSFETs from  
International Rectifier utilize advanced processing  
techniques to achieve extremely low on-resistance per  
silicon area. This benefit, combined with the ruggedized  
device design that HEXFET Power MOSFETs are well  
knownfor,providesthedesignerwithanextremelyefficient  
andreliabledeviceforuseinawidevarietyofapplications.  
1
2
3
4
8
S1  
G1  
D1  
7
D1  
6
S2  
D2  
5
D2  
G2  
The SO-8 has been modified through a customized  
leadframe for enhanced thermal characteristics and  
multiple-die capability making it ideal in a variety of  
powerapplications. Withtheseimprovements,multiple  
devicescanbeusedinanapplicationwithdramatically  
reduced board space. The package is designed for  
vapor phase, infrared, or wave soldering techniques.  
SO-8  
Top View  
Absolute Maximum Ratings  
Parameter  
Drain- Source Voltage  
Max.  
-12  
Units  
V
VDS  
ID @ TA = 25°C  
ID @ TA= 70°C  
IDM  
Continuous Drain Current, VGS @ -4.5V  
Continuous Drain Current, VGS @ -4.5V  
Pulsed Drain Current   
-9.2  
-7.4  
A
-37  
PD @TA = 25°C  
PD @TA = 70°C  
Power Dissipation ƒ  
Power Dissipation ƒ  
2.0  
W
1.3  
Linear Derating Factor  
16  
mW/°C  
VGS  
Gate-to-Source Voltage  
± 8.0  
-55 to + 150  
V
TJ, TSTG  
Junction and Storage Temperature Range  
°C  
Thermal Resistance  
Symbol  
RθJL  
Parameter  
Junction-to-Drain Lead  
Typ.  
–––  
Max.  
20  
Units  
RθJA  
Junction-to-Ambient ƒ  
–––  
62.5  
°C/W  
www.irf.com  
1
10/7/04  
IRF7329PbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Drain-to-Source Breakdown Voltage  
Min. Typ. Max. Units  
-12 ––– –––  
Conditions  
VGS = 0V, ID = -250µA  
V(BR)DSS  
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient  
––– 0.007 ––– V/°C Reference to 25°C, ID = -1mA  
––– ––– 17  
––– ––– 21  
––– ––– 30  
-0.40 ––– -0.90  
25 ––– –––  
––– ––– -1.0  
––– ––– -25  
––– ––– -100  
––– ––– 100  
VGS = -4.5V, ID = -9.2A ‚  
GS = -2.5V, ID = -7.4A ‚  
RDS(on)  
Static Drain-to-Source On-Resistance  
mΩ  
V
VGS = -1.8V, ID = -4.6A ‚  
VDS = VGS, ID = -250µA  
VDS = -10V, ID = -9.2A  
VDS = -9.6V, VGS = 0V  
VDS = -9.6V, VGS = 0V, TJ = 70°C  
VGS = -8.0V  
VGS(th)  
gfs  
IDSS  
Gate Threshold Voltage  
V
S
Forward Transconductance  
Drain-to-Source Leakage Current  
µA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
nA  
IGSS  
VGS = 8.0V  
Qg  
––– 38  
––– 6.8  
––– 8.1  
57  
10  
12  
ID = -9.2A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
nC VDS = -6.0V  
VGS = -4.5V  
––– 10 –––  
––– 8.6 –––  
––– 340 –––  
––– 260 –––  
––– 3450 –––  
––– 1000 –––  
––– 640 –––  
VDD = -6.0V  
ns  
ID = -1.0A  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RD = 6.0Ω  
VGS = -4.5V ‚  
VGS = 0V  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
pF  
VDS = -10V  
ƒ = 1.0MHz  
Reverse Transfer Capacitance  
Source-Drain Ratings and Characteristics  
Parameter  
Continuous Source Current  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
D
S
IS  
MOSFET symbol  
showing the  
––– ––– -2.0  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
p-n junction diode.  
–––  
-37  
–––  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
––– ––– -1.2  
V
TJ = 25°C, IS = -2.0A, VGS = 0V ‚  
TJ = 25°C, IF = -2.0A  
––– 50  
––– 48  
75  
72  
ns  
Qrr  
nC di/dt = -100A/µs ‚  
Notes:  
 Repetitive rating; pulse width limited by  
ƒ When mounted on 1 inch square copper board.  
max. junction temperature.  
‚ Pulse width ≤ 400µs; duty cycle ≤ 2%.  
2
www.irf.com  
IRF7329PbF  
100  
10  
1
100  
10  
1
VGS  
VGS  
TOP  
-10V  
-7.0V  
-4.5V  
-3.0V  
-2.5V  
-1.8V  
-1.5V  
TOP  
-10V  
-7.0V  
-4.5V  
-3.0V  
-2.5V  
-1.8V  
-1.5V  
BOTTOM -1.2V  
BOTTOM-1.2V  
-1.2V  
-1.2V  
20µs PULSE WIDTH  
°
T = 150 C  
J
20µs PULSE WIDTH  
T = 25 C  
J
°
0.1  
0.1  
0.1  
1
10  
1
10  
-V , Drain-to-Source Voltage (V)  
DS  
-V , Drain-to-Source Voltage (V)  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
2.0  
100  
-9.2A  
=
I
D
1.5  
1.0  
0.5  
0.0  
T
= 150°C  
J
10  
T
= 25°C  
V
J
= -10V  
DS  
20µs PULSE WIDTH  
V
=-4.5V  
GS  
1
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
1.0  
1.4  
1.8 2.2  
T , Junction Temperature ( C)  
J
-V , Gate-to-Source Voltage (V)  
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRF7329PbF  
10  
8
5000  
I
D
=
-9.2A  
V
C
= 0V,  
f = 1 MHZ  
GS  
V
V
=-9.6V  
=-6V  
= C + C  
,
C
ds  
SHORTED  
DS  
DS  
iss  
gs  
gd  
C
= C  
rss  
gd  
4000  
3000  
2000  
1000  
0
C
= C + C  
ds gd  
oss  
Ciss  
6
4
Coss  
Crss  
2
0
0
10  
20  
30  
40  
50  
60  
70  
1
10  
100  
Q , Total Gate Charge (nC)  
G
-V , Drain-to-Source Voltage (V)  
DS  
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
100  
10  
1
100  
10  
1
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
100us  
1ms  
°
T = 150 C  
J
°
T = 25 C  
J
10ms  
°
T = 25 C  
A
J
°
T = 150 C  
V
= 0 V  
Single Pulse  
GS  
0.1  
0.2  
0.1  
1
10  
100  
0.4  
0.6  
0.8  
1.0  
-V , Drain-to-Source Voltage (V)  
DS  
-V ,Source-to-Drain Voltage (V)  
SD  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
4
www.irf.com  
IRF7329PbF  
10.0  
8.0  
6.0  
4.0  
2.0  
0.0  
RD  
VDS  
VGS  
D.U.T.  
RG  
-
+
VDD  
VGS  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
t
t
r
t
t
f
d(on)  
d(off)  
V
GS  
10%  
25  
50  
75  
100  
125  
150  
°
T , Case Temperature ( C)  
C
90%  
Fig 9. Maximum Drain Current Vs.  
V
DS  
Case Temperature  
Fig 10b. Switching Time Waveforms  
100  
D = 0.50  
0.20  
0.10  
0.05  
10  
P
0.02  
0.01  
DM  
1
t
1
t
2
Notes:  
1. Duty factor D =  
SINGLE PULSE  
(THERMAL RESPONSE)  
t / t  
1
2
2. Peak T =P  
J
x Z  
+ T  
thJA A  
DM  
0.1  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  
www.irf.com  
5
IRF7329PbF  
0.030  
0.025  
0.020  
0.015  
0.010  
0.030  
0.025  
0.020  
0.015  
0.010  
V
= -1.8V  
GS  
I
= -9.2A  
D
V
= -2.5V  
= -4.5V  
GS  
V
GS  
0.0  
2.0  
4.0  
6.0  
8.0  
-V  
Gate -to -Source Voltage (V)  
4
6
8
10  
12  
14  
GS,  
-I , Drain Current (A)  
D
Fig 12. Typical On-Resistance Vs.  
Fig 13. Typical On-Resistance Vs.  
Gate Voltage  
Drain Current  
Current Regulator  
Same Type as D.U.T.  
50KΩ  
Q
G
.2µF  
12V  
.3µF  
-
V
+
DS  
Q
Q
GD  
D.U.T.  
GS  
V
GS  
V
G
-3mA  
I
I
D
G
Charge  
Current Sampling Resistors  
Fig 14a. Basic Gate Charge Waveform  
Fig 14b. Gate Charge Test Circuit  
6
www.irf.com  
IRF7329PbF  
1.0  
0.8  
0.6  
0.4  
0.2  
100  
80  
60  
40  
20  
0
I
= -250µA  
D
-75 -50 -25  
0
25  
50  
75 100 125 150  
T
, Temperature ( °C )  
0.001  
0.010  
0.100  
1.000  
10.000  
100.000  
J
Time (sec)  
Fig 16. Typical Power Vs. Time  
Fig 15. Typical Vgs(th) Vs.  
Junction Temperature  
www.irf.com  
7
IRF7329PbF  
SO-8 Package Outline  
Dimensions are shown in milimeters (inches)  
INCHES  
MILLIMETERS  
DIM  
A
D
B
MIN  
.0532  
MAX  
.0688  
.0098  
.020  
MIN  
1.35  
0.10  
0.33  
0.19  
4.80  
3.80  
MAX  
1.75  
0.25  
0.51  
0.25  
5.00  
4.00  
5
A
E
A1 .0040  
b
c
D
E
.013  
8
1
7
2
6
3
5
.0075  
.189  
.0098  
.1968  
.1574  
6
H
0.25 [.010]  
A
.1497  
4
e
.050 BASIC  
1.27 BASIC  
0.635 BASIC  
e1 .025 BASIC  
H
K
L
.2284  
.0099  
.016  
0°  
.2440  
.0196  
.050  
8°  
5.80  
0.25  
0.40  
0°  
6.20  
0.50  
1.27  
8°  
e
6X  
y
e1  
A
K x 45°  
A
C
y
0.10 [.004]  
8X c  
A1  
B
8X L  
8X b  
0.25 [.010]  
7
C
F OOT PRINT  
8X 0.72 [.028]  
NOT ES :  
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.  
2. CONTROLLING DIMENSION: MILLIMETER  
3. DIMENS IONS ARE S HOWN IN MIL L IME T E RS [INCHES ].  
4. OUT L INE CONF OR MS T O JEDEC OU T LINE MS -012AA.  
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.  
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].  
6.46 [.255]  
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.  
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].  
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO  
ASUBSTRATE.  
3X 1.27 [.050]  
8X 1.78 [.070]  
SO-8 Part Marking Information (Lead-Free)  
EXAMPLE: THIS IS AN IRF7101 (MOSFET)  
DAT E CODE (YWW)  
P = DE S IGNAT E S L E AD-F RE E  
PRODUCT (OPTIONAL)  
Y = LAST DIGIT OF THE YEAR  
WW = WE E K  
XXXX  
F7101  
INTERNATIONAL  
RECTIFIER  
LOGO  
A = AS S E MB LY S IT E CODE  
LOT CODE  
PART NUMBER  
8
www.irf.com  
IRF7329PbF  
SO-8 Tape and Reel  
Dimensions are shown in milimeters (inches)  
TERMINAL NUMBER 1  
12.3 ( .484 )  
11.7 ( .461 )  
8.1 ( .318 )  
7.9 ( .312 )  
FEED DIRECTION  
NOTES:  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).  
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
330.00  
(12.992)  
MAX.  
14.40 ( .566 )  
12.40 ( .488 )  
NOTES :  
1. CONTROLLING DIMENSION : MILLIMETER.  
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Consumer market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.10/04  
www.irf.com  
9

相关型号：

IRF732FI

 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3A I(D) | TO-220AB
ETC

IRF732R

 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB
ETC

IRF733

 N-Channel Power MOSFETs, 5.5A, 350 V/400V
FAIRCHILD

IRF733-001

 Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
INFINEON

IRF733-001PBF

 4.5A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET
INFINEON

IRF733-002PBF

 Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRF733-003

 Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRF733-003PBF

 Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRF733-004

 Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRF733-004PBF

 Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRF733-005

 Power Field-Effect Transistor, 4.5A I(D), 350V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON

IRF733-005PBF

 4.5A, 350V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET
INFINEON
©2020 ICPDF网 联系我们和版权申明