IRF7329 [INFINEON]
HEXFET POWER MOSFET; HEXFET功率MOSFET
| 型号： | IRF7329 |
| 厂家： | 
Infineon |
| 描述： | HEXFET POWER MOSFET |
| 文件： | 总9页 (文件大小：319K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-94095A
IRF7329
HEXFET® Power MOSFET
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TrenchTechnology
VDSS
RDS(on) max (mW)
17@VGS = -4.5V
21@VGS = -2.5V
30@VGS = -1.8V
ID
UltraLowOn-Resistance
DualP-ChannelMOSFET
LowProfile(<1.8mm)
Available in Tape & Reel
±9.2A
±7.4A
±4.6A
-12V
Description
New P-Channel HEXFETÒ power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the ruggedized
device design that HEXFET Power MOSFETs are well
knownfor,providesthedesignerwithanextremelyefficient
andreliabledeviceforuseinawidevarietyofapplications.
1
2
3
4
8
S1
G1
D1
7
D1
6
S2
D2
5
D2
G2
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devicescanbeusedinanapplicationwithdramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
SO-8
Top View
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-12
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-9.2
-7.4
-37
A
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
2.0
W
1.3
Linear Derating Factor
16
mW/°C
VGS
TJ, TSTG
Gate-to-Source
Junction
Voltage
±
and
Storage
Temperature
Range
Thermal Resistance
Symbol
RqJL
Parameter
Junction-to-Drain Lead
Typ.
Max.
20
Units
RqJA
Junction-to-Ambient
62.5
°C/W
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01/29/04
IRF7329
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-12
V
VGS = 0V, ID = -250µA
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient
0.007 V/°C Reference to 25°C, ID = -1mA
17
21
30V
-0.40 -0.90
25
-1.0V
-25
-100
100
VGS = -4.5V, ID = -9.2A
RDS(on)
Static Drain-to-Source On-Resistance
mW
V
GS = -2.5V, ID = -7.4A
GS = -1.8V, ID = -4.6A
VGS(th)
gfs
IDSS
Gate Threshold Voltage
V
S
VDS = VGS, ID = -250µA
VDS = -10V, ID = -9.2A
DS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
VGS = -8.0V
Forward Transconductance
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
IGSS
VGS = 8.0V
Qg
38
57
ID = -9.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source
Charge
6.8 10nC VDS = -6.0V
Gate-to-Drain ("Miller") Charge
8.1 12
VGS = -4.5V
Turn-On
Delay
Time
10
8.6
340
V= -6.0V
DD
ns
Rise Time
ID = -1.0A
DR= 6.0W
td(off)
tf
Turn-Off Delay Time
Fall Time
260
VGS = -4.5V
V GS = 0V
Ciss
Coss
Crss
Input Capacitance
3450
1000
640
Output Capacitance
pF VDS = -10V
Reverse Transfer Capacitance
=
1M.0Hz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
S
IS
-2.0
A
V
G
ISM
-1.2
5075
48 72
-37
VSD
trr
Qrr
Diode Forward Voltage
TJ = 25°C, IS = -2.0A, VGS = 0V
Reverse
Recovery
Time
ns J =T25°C, IF = -2.0A
Reverse Recovery Charge
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board.
max. junction temperature.
Pulse width £ 400µs; duty cycle £ 2%.
2
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IRF7329
100
10
1
100
10
1
VGS
VGS
TOP
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
TOP
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM -1.2V
BOTTOM-1.2V
-1.2V
-1.2V
20µs PULSE WIDTH
°
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
0.1
0.1
0.1
1
10
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
-9.2A
=
I
D
1.5
1.0
0.5
0.0
V
=-4.5V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7329
10
8
I
D
=
-9.2A
V
V
=-9.6V
=-6V
DS
DS
6
4
2
0
0
10
20
30
40
50
60
70
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
1ms
°
T = 150 C
J
°
T = 25 C
J
10ms
°
T = 25 C
A
J
°
T = 150 C
V
= 0 V
Single Pulse
GS
0.1
0.2
0.1
1
10
100
0.4
0.6
0.8
1.0
-V , Drain-to-Source Voltage (V)
DS
-V ,Source-to-Drain Voltage (V)
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7329
10.0
8.0
6.0
4.0
2.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width £ 1 µs
Duty Factor £ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
P
0.02
0.01
DM
1
t
1
t
2
Notes:
1. Duty factor D =
SINGLE PULSE
(THERMAL RESPONSE)
t / t
1
2
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7329
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-
V
+
DS
Q
Q
D.U.T.
GS
GD
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRF7329
Fig 16. Typical Power Vs. Time
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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7
IRF7329
SO-8 Package Details
SO-8 Part Marking
8
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IRF7329
Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the consumer market.
Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 01/04
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