IRF7324D1 [INFINEON]
FETKY MOSFET / Schottky Diode; FETKY MOSFET /肖特基二极管
| 型号： | IRF7324D1 |
| 厂家： | 
Infineon |
| 描述： | FETKY MOSFET / Schottky Diode |
| 文件： | 总8页 (文件大小：157K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 91789
IRF7324D1
PRELIMINARY
FETKY MOSFET / Schottky Diode
l Co-packaged HEXFET Power
MOSFET and Schottky Diode
l Ideal for Mobile Phone Applications
l Generation V Technology
l SO-8 Footprint
1
2
8
7
K
K
A
VDSS = -20V
A
3
4
6
5
S
D
D
R
DS(on) = 0.18Ω
G
Schottky Vf = 0.39V
Top View
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching
regulator applications. Generation 5 HEXFETs utilize advanced processing
techniquestoachieveextremelylowon-resistancepersiliconarea. Combining
this technology with International Rectifier's low forward drop Schottky
rectifiers results in an extremely efficient device suitable for use in a wide
variety of portable electronics applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
SO -8
Absolute Maximum Ratings (TA = 25°C unless otherwise noted)
Parameter
Maximum
Units
ID @ TA = 25°C
Continuous Drain Current, VGS@4.5V➃
-2.9
A
I
D @ TA = 70°C
-2.3
IDM
Pulsed Drain Current ➀
Power Dissipation ➃
-23
PD @TA = 25°C
PD @TA = 70°C
2.0
W
1.3
Linear Derating Factor
16
mW/°C
V
VGS
Gate-to-Source Voltage
± 12
dv/dt
Peak Diode Recovery dv/dt ➁
Junction and Storage Temperature Range
-5.0
V/ns
°C
TJ, TSTG
-55 to +150
Thermal Resistance Ratings
Parameter
Maximum
Units
RθJA
Junction-to-Ambient ➃
62.5
°C/W
Notes:
➀ Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
➁ ISD ≤ -2.2A, di/dt ≤ -50A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
➂ Pulse width ≤ 300µs; duty cycle ≤ 2%
➃ Surface mounted on FR-4 board, t ≤ 10sec.
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1
IRF7324D1
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS
RDS(on)
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = -250µA
VGS = -4.5V, ID = -2.9A
VGS = -2.7V, ID = -2.5A
VDS = VGS, ID = -250µA
VDS = -16V, ID = -2.2A
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = -12V
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
-20
—
—
—
V
0.070 0.180
0.115 0.375
Ω
—
VGS(th)
gfs
Gate Threshold Voltage
-0.70
4.0
—
—
—
—
—
—
—
15
—
—
V
S
Forward Transconductance
Drain-to-Source Leakage Current
IDSS
-1.0
-25
-100
100
22
µA
nA
—
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
—
—
VGS = 12V
Qg
—
ID = -2.2A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
—
2.2 3.3
6.0 9.0
nC VDS = -16V
VGS = -4.5V (see figure 10)
—
➂
—
8.4
26
—
—
—
—
—
—
—
VDD = -10V
ID = -2.2A
RG = 6.0Ω
RD = 4.5Ω
VGS = 0V
—
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
—
51
—
33
➂
Ciss
Coss
Crss
Input Capacitance
—
610
310
170
Output Capacitance
—
VDS = -15V
Reverse Transfer Capacitance
—
ƒ = 1.0MHz (see figure 9)
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units Conditions
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Body Diode Forward Voltage
—
—
—
—
—
—
—
—
43
44
-2.0
-23
-1.2
65
A
ISM
VSD
trr
V
TJ = 25°C, IS = -2.0A, VGS = 0V
TJ = 25°C, IF = -2.3A
Reverse Recovery Time (Body Diode)
Reverse Recovery Charge
ns
nC
Qrr
66
di/dt = 100A/µs ➂
Schottky Diode Maximum Ratings
Parameter
Max. Units.
Conditions
IF(av)
Max. Average Forward Current
1.7
1.2
120
11
50% Duty Cycle. Rectangular Wave, TA = 25°C
TA = 70°C
A
ISM
Max. peak one cycle Non-repetitive
Surge current
5µs sine or 3µs Rect. pulse
Following any rated
10ms sine or 6ms Rect. pulse load condition &
with VRRM applied
A
Schottky Diode Electrical Specifications
Parameter
Max. Units
Conditions
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C .
VR = 20V TJ = 25°C
TJ = 125°C
VFM
Max. Forward voltage drop
0.50
0.62
V
0.39
0.57
IRM
Max. Reverse Leakage current
0.05
mA
10
C
Max. Junction Capacitance
Max. Voltage Rate of Charge
92
pF
VR = 5Vdc ( 100kHz to 1 MHz) 25°C
Rated VR
t
dv/dt
3600 V/ µs
2
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IRF7324D1
Power Mosfet Characteristics
100
10
1
100
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
VGS
TOP
TOP
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
BOTTOM - 1.5V
10
1
-1.5V
-1.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
T
J
= 25°C
T
= 150°C
J
A
100
0.1
0.01
0.1
0.01
A
0.1
1
10
0.1
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
D S
, Drain-to-Source Voltage (V)
D S
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
100
TJ = 25°C
TJ = 150°C
10
T
= 150°C
J
T
= 25°C
J
1
VDS = -15V
20µs PULSE W ID TH
V
= 0V
GS
A
0.1
0.1
5.0A
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.3
0.6
0.9
1.2
1.5
-V
, Source-to-Drain Voltage (V)
-VG S , Gate-to-Source Voltage (V)
SD
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode
ForwardVoltage
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3
IRF7324D1
Power Mosfet Characteristics
0.10
2.0
I
= -3.6A
D
0.09
0.08
0.07
0.06
1.5
1.0
0.5
0.0
VGS =-5.0V
V
= -4.5V
G S
0.05
A
A
0
1
2
3
-60 -40 -20
0
20
40
60
80
100 120 140 160
T
J
, Junction Tem perature (°C)
-I , Drain Current (A)
D
Fig 6. Typical On-Resistance Vs. Drain
Fig 5. Normalized On-Resistance
Current
Vs.Temperature
0.14
0.12
0.10
0.08
0.06
0.04
100
OPERATION IN THIS AREA LIM ITED
BY R
DS(on)
10
100µs
I
= -2.9A
D
1m s
1
10m s
T
T
= 25°C
= 100°C
Single Pulse
A
J
0.1
A
A
2
4
6
8
1
10
100
-V
, Drain-to-Source Voltage (V)
DS
-V
, G ate-to-Source Voltage (V)
GS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
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IRF7324D1
Power Mosfet Characteristics
10
1500
1000
500
0
V
C
C
C
= 0V,
f = 1M Hz
I
= -2.2A
GS
iss
D
= C
+ C
+ C
,
C
SHORTED
V = -16V
gs
gd
ds
D S
= C
= C
rss
oss
gd
ds
gd
8
6
4
2
0
C
C
iss
oss
C
rss
FOR TEST CIRCUIT
SEE FIGURE 12
A
A
1
10
100
0
5
10
15
20
25
-V
, Drain-to-Source Voltage (V)
Q
, Total G ate Charge (nC)
D S
G
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7324D1
Schottky Diode Characteristics
10
1
TJ = 150°C
TJ = 125°C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
TJ
=
25°C
1000
100
10
T
= 25°C
J
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Forward Voltage D rop - V FM (V)
Fig. 12 -Typical Forward Voltage Drop Characteris-
tics
A
0
5
10
15
20
Reverse Voltage - V (V)
R
Fig.14 - Typical Junction Capacitance Vs.
Reverse Voltage
6
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IRF7324D1
SO-8 Package Details
INC H ES
M ILLIM ETER S
D IM
D
M IN
M AX
.0688
.0098
.018
M IN
1.35
0.10
0.36
0.19
4.80
3.81
M AX
1.75
0.25
0.46
0.25
4.98
3.99
5
- B -
θ
A
.0532
.0040
.014
A1
B
8
1
7
2
6
3
5
4
5
H
E
C
D
E
.0075
.189
.0098
.196
- A -
0.25 (.010)
M
A M
.150
.157
e
e
.050 BASIC
.025 BASIC
1.27 BASIC
K x 45°
θ
6X
e1
e1
H
K
0.635 BASIC
.2284
.011
0.16
0°
.2440
5.80
0.28
0.41
0°
6.20
0.48
1.27
8°
A
.019
.050
8°
- C -
0.10 (.004)
6
C
8X
L
8X
L
A1
B
8X
θ
0.25 (.010)
M
C A S B S
RECOM M ENDED FOOTPRINT
NOTES :
0.72 (.028 )
8X
1. DIM ENSIONING AND TOLERA NCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIM ENSION : INCH.
3. DIM ENSIONS ARE SHOW N IN MILLIME TERS (INCHES).
4. OUTLINE CONFORM S TO JEDEC OUTLINE M S-012AA.
6.46 ( .255 )
1.78 (.070)
8X
5
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
M OLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
DIM ENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUB STRA TE..
6
1.27 ( .050 )
3X
Part Marking
(IRF7101 example )
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7
IRF7324D1
TER M INAL NU M BER 1
Tape and Reel
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED D IREC TIO N
N OTES:
1. C ON TRO LLIN G DIM EN SION : M ILLIM ETER.
2. ALL DIM ENSION S ARE SHO W N IN M ILLIM ETER S(INC HES).
3. OU TLIN E C ON FOR M S TO EIA-481 & EIA-541.
330.00
(12.992)
M AX.
14.40 ( .566 )
12.40 ( .488 )
NO TES :
1. CO NTRO LLING D IM EN SIO N : M ILLIM ETER .
2. O U TLINE C O N FO RM S TO EIA-481 & EIA-541.
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Data and specifications subject to change without notice.
8
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