IRF7324D1PBF [INFINEON]
FETKY⑩MOSFET / Schottky Diode; FETKY⑩MOSFET /肖特基二极管
| 型号： | IRF7324D1PBF |
| 厂家： | 
Infineon |
| 描述： | FETKY⑩MOSFET / Schottky Diode |
| 文件： | 总8页 (文件大小：134K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95309A
IRF7324D1PbF
FETKYäMOSFET / Schottky Diode
l Co-packaged HEXFET® Power
MOSFET and Schottky Diode
l Ideal for Mobile Phone Applications
l Generation V Technology
l SO-8 Footprint
1
2
3
4
8
7
K
K
A
VDSS = -20V
A
6
5
S
D
D
R
DS(on) = 0.27Ω
G
l Lead-Free
Schottky Vf = 0.39V
Top View
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer
the designer an innovative board space saving solution for switching regulator
applications. Generation5HEXFETsutilizeadvancedprocessing techniques
to achieve extremely low on-resistance per silicon area. Combining this
technology with International Rectifier's low forward drop Schottky rectifiers
results in an extremely efficient device suitable for use in a wide variety of
portableelectronicsapplications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics. The SO-8 package is designed for vapor phase,
infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
-20
Units
VDS
V
V
Gate-to-Source Voltage
± 12
-2.2
-1.8
-22
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
@ TA = 25°C
D
D
@ TA = 70°C
A
DM
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
2.0
W
D
D
Power Dissipation
1.3
-0.74
Peak Diode Recovery
dV/dt
V/ns
Linear Derating Factor
Operating Junction and
16
mW/°C
°C
T
T
-55 to + 150
J
Storage Temperature Range
STG
Thermal Resistance
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
–––
Max.
20
Units
Rθ
Rθ
°C/W
JL
–––
62.5
JA
Notes through ꢀare on page 8
www.irf.com
1
12/06/04
IRF7324D1PbF
MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = -250µA
VGS = -4.5V, ID = -1.2A
BVDSS
RDS(on)
-20
–––
–––
V
Static Drain-to-Source On-Resistance
––– 0.155 0.270
––– 0.260 0.400
Ω
V
GS = -2.7V, ID = -0.6A
VGS(th)
IDSS
Gate Threshold Voltage
-0.70 –––
–––
-1.0
-25
V
VDS = VGS, ID = -250µA
Drain-to-Source Leakage Current
–––
–––
–––
–––
2.4
–––
–––
–––
µA VDS = -16V, VGS = 0V
V
DS = -16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA VGS = -12V
VGS = 12V
––– -100
gfs
Qg
–––
5.2
0.88
2.5
10
–––
7.8
S
V
DS = -16V, ID = -2.2A
ID = -2.2A
nC VGS = -4.5V
DD = -16V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
VDD = -10V, VGS = -4.5V
ID = -2.2A
12
Ω
RG = 6.0
RD = 4.5Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
11
ns
7.6
260
140
70
Ciss
Coss
Crss
Input Capacitance
VGS = 0V
Output Capacitance
pF VDS = -15V
ƒ = 1.0MHz
Reverse Transfer Capacitance
MOSFET Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
Pulsed Source Current
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
–––
–––
–––
–––
26
-2.2
-22
-1.2
39
ISM
VSD
V
T = 25°C, I = -2.2A, V = 0V
J S GS
trr
ns T = 25°C, I = -2.2A, VDD = -10V
J
F
Qrr
Reverse Recovery Charge
–––
24
36
nC di/dt = 100A/µs
Schottky Diode Maximum Ratings
Parameter
Conditions
Max. Units
IF(av)
ISM
Max. Average Forward current
1.7
50% Duty Cycle Rectangular Wave, TA = 25°C
TA = 70°C
1.2
120
11
A
5µs sine or 3µs Rect. Pulse
10ms sine or 6ms Rect. Pulse
Following any rated
load condition &
Max.Peak one cycle Non-repetitive
Surge Current
with VRRM applied
Schottky Diode Electrical Specifications
Parameter
Conditions
Max. Units
VFM
Max. Forward Voltage Drop
0.50
0.62
0.39
0.57
0.05
10
V
IF = 1.0A, TJ = 25°C
IF = 2.0A, TJ = 25°C
IF = 1.0A, TJ = 125°C
IF = 2.0A, TJ = 125°C
IRM
Max. Reverse Leakage Current
mA VR = 20V
TJ = 25°C
TJ = 125°C
Ct
Max. Junction Capacitance
Max. Voltage Rate of Charge
92
pF VR = 5Vdc (100kHz to 1MHz) 25°C
dV/dt
2
3600 V/µs Rated VR
www.irf.com
IRF7324D1PbF
Power Mosfet Characteristics
1000
100
10
100
TOP
VGS
VGS
TOP
-7.5V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.0V
-1.5V
-7.5V
-5.0V
-4.0V
-3.5V
-3.0V
-2.5V
-2.0V
-1.5V
10
BOTTOM
BOTTOM
1
1
-1.5V
0.1
0.01
60µs PULSE WIDTH
≤
Tj = 150°C
60µs PULSE WIDTH
≤
-1.5V
Tj = 25°C
0.1
0.1
1
10
0.1
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.0
10.0
1.0
100.0
10.0
1.0
T
= 25°C
J
T
= 150°C
J
T
= 150°C
J
T
= 25°C
J
V
= -10V
DS
≤ 60µs PULSE WIDTH
V
= 0V
GS
0.1
0.1
1.0
2.0
3.0
4.0
5.0
6.0
7.0
0.4
0.6
0.8
1.0
1.2
1.4
1.6
-V , Gate-to-Source Voltage (V)
GS
-V , Source-to-Drain Voltage (V)
SD
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode
ForwardVoltage
www.irf.com
3
IRF7324D1PbF
Power Mosfet Characteristics
1.5
0.164
I
= -2.2A
D
V
- 4.5V
GS=
V
= -4.5V
GS
0.160
0.156
0.152
0.148
0.144
0.140
1.0
V
- 5.0V
GS=
0.5
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
3.0
, Junction Temperature (°C)
-I , Drain Current (A)
J
D
Fig 6. Typical On-Resistance Vs.
Fig 5. Normalized On-Resistance
Drain Current
Vs.Temperature
100
10
1
0.4
OPERATION IN THIS AREA
I
= -2.2A
D
LIMITED BY R
(on)
DS
T
= 25°C
J
0.3
0.2
0.1
0.0
100µsec
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
2.0
4.0
6.0
8.0
10.0
1
10
100
-V , Gate-to-Source Voltage (V)
GS
-V
DS
, Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
www.irf.com
IRF7324D1PbF
Power Mosfet Characteristics
600
500
400
300
200
100
0
12
V
= 0V,
f = 1 MHZ
GS
I = -2.2A
D
C
= C + C , C SHORTED
iss
gs
gd ds
V
= -16V
DS
C
= C
10
8
rss
gd
VDS= -10V
C
= C + C
oss
ds
gd
Ciss
6
4
Coss
Crss
2
0
0
2
4
6
8
10
12
1
10
100
Q
Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 9. Typical Capacitance Vs.
Fig 10. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T = P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRF7324D1PbF
Schottky Diode Characteristics
10
1
TJ = 150°C
TJ = 125°C
Fig. 13 - Typical Values of Reverse
Current Vs. Reverse Voltage
TJ = 25°C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
Forward Votage Drop - VF(V)
M
Fig. 12 -Typical Forward Voltage Drop Characteristics
Fig.14 - Typical Junction capacitance
Vs.Reverse Voltage
6
www.irf.com
IRF7324D1PbF
SO-8 (Fetky) Package Outline (Dimensions are shown in millimeters (inches) )
INCHES
MILLIMETERS
DIM
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
A
5
A
E
A1 .0040
b
c
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
0.25 [.010]
A
.1497
4
.050 BASIC
1.27 BASIC
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PR INT
8X 0.72 [.028]
NOT ES:
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONT ROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF ORMS T O JE DE C OUT L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROT RUSIONS.
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A S U B S T R AT E .
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 (Fetky) Part Marking Information
EXAMPLE: THIS IS AN IRF7807D1 (FET KY)
DAT E CODE (YWW)
P = DISGNATES LEAD - FREE
PRODUCT (OPTIONAL)
Y= LAST DIGIT OF THE YEAR
WW = WE E K
A= ASSEMBLYSITE CODE
XXXX
807D1
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE
PART NUMBER
www.irf.com
7
IRF7324D1PbF
SO-8 (Fetky) Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by maximum junction temperature (see figure 11)
ISD ≤ -2.2A, di/dt ≤ -96A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs; duty cycle ≤ 2%
Surface mounted on FR-4 board, steady-state
ꢀ R is measured at TJ of approximately 90°C.
θ
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 12/04
8
www.irf.com
相关型号：
IRF7325TRPBF
Small Signal Field-Effect Transistor, 7.8A I(D), 12V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS AND REACH COMPLIANT, SOP-8
INFINEON
IRF7326D2TR
Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
INFINEON
©2020 ICPDF网 联系我们和版权申明