IRF7325PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRF7325PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总9页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 95721
IRF7325PbF
HEXFET® Power MOSFET
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Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.8mm)
Available in Tape & Reel
Lead-Free
VDSS
-12V
RDS(on) max (mW)
24@VGS = -4.5V
33@VGS = -2.5V
49@VGS = -1.8V
ID
±7.8A
±6.2A
±3.9A
Description
New P-Channel HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
1
2
3
4
8
S1
G1
D1
7
D1
6
S2
D2
5
D2
G2
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powerapplications. Withtheseimprovements,multiple
devicescanbeusedinanapplicationwithdramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering techniques.
SO-8
Top View
Absolute Maximum Ratings
Parameter
Drain- Source Voltage
Max.
-12
Units
V
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-7.8
-6.2
A
-39
PD @TA = 25°C
PD @TA = 70°C
Power Dissipation
Power Dissipation
2.0
W
1.3
Linear Derating Factor
16
mW/°C
VGS
Gate-to-Source Voltage
± 8.0
-55 to + 150
V
TJ, TSTG
Junction and Storage Temperature Range
°C
Thermal Resistance
Symbol
RθJL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
20
Units
RθJA
Junction-to-Ambient
–––
62.5
°C/W
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1
10/4/04
IRF7325PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-12 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– 0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 24
––– 33
––– 49
-0.40 ––– -0.90
17 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -4.5V, ID = -7.8A
RDS(on)
Static Drain-to-Source On-Resistance
mΩ
VGS = -2.5V, ID = -6.2A
VGS = -1.8V, ID = -3.9A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -7.8A
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70°C
VGS = -8.0V
VGS(th)
gfs
IDSS
Gate Threshold Voltage
V
S
Forward Transconductance
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
IGSS
VGS = 8.0V
Qg
––– 22
33
ID = -7.8A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
––– 5.0 7.5
––– 4.7 7.0
––– 9.4 –––
––– 9.8 –––
––– 240 –––
––– 180 –––
––– 2020 –––
––– 520 –––
––– 330 –––
nC VDS = -6.0V
VGS = -4.5V
VDD = -6.0V
ns
ID = -1.0A
td(off)
tf
Turn-Off Delay Time
Fall Time
RD = 6.0Ω
VGS = -4.5V
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
pF
VDS = -10V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
IS
MOSFET symbol
showing the
-2.0
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
-39
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
V
TJ = 25°C, IS = -2.0A, VGS = 0V
TJ = 25°C, IF = -2.0A
––– 36
––– 28
54
42
ns
nC
Qrr
di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
When mounted on 1 inch square copper board.
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
2
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IRF7325PbF
100
10
1
100
10
1
VGS
VGS
TOP
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
TOP
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
BOTTOM-1.2V
BOTTOM -1.2V
-1.2V
-1.2V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.1
0.1
0.1
0.1
1
10
1
10
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
-7.8A
=
I
D
1.5
1.0
0.5
0.0
10
°
T = 150 C
J
°
T = 25 C
J
1
V
= -10V
DS
V
=-4.5V
20µs PULSE WIDTH
GS
0.1
1.0
1.5
2.0
2.5 3.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7325PbF
10
8
3000
I
D
=
-7.8A
V
= 0V,
f = 1 MHZ
GS
V
V
=-9.6V
=-6V
DS
DS
C
= C + C
,
C
ds
SHORTED
iss
gs
gd
C
= C
2500
2000
1500
1000
500
rss
gd
C
= C + C
oss
ds gd
Ciss
6
4
Coss
Crss
2
0
0
1
10
100
0
10
20
30
40
50
Q , Total Gate Charge (nC)
G
-V , Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
100us
1ms
10
1
°
T = 25 C
J
10ms
°
T = 25 C
A
J
°
T = 150 C
V
= 0 V
Single Pulse
GS
0.1
0.2
0.6
1.0
1.4
1.8
0.1
1
10
100
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7325PbF
8.0
6.0
4.0
2.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
0.02
0.01
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7325PbF
0.05
0.04
0.03
0.02
0.01
0.08
0.06
0.04
0.02
0
V
= -1.8V
GS
V
= -2.5V
GS
I
= -7.8A
D
V
GS
= -4.5V
8.0
2.0
4.0
6.0
10.0
0.0
2.0
4.0
6.0
8.0
10.0
-I , Drain Current (A)
D
-V
Gate -to -Source Voltage (V)
GS,
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRF7325PbF
1.0
0.8
0.6
0.4
100
80
60
40
20
0
I
= -250µA
D
-75 -50 -25
0
25
50
75 100 125 150
0.001
0.010
0.100
1.000
10.000
100.000
T , Temperature ( °C )
Time (sec)
J
Fig 16. Typical Power Vs. Time
Fig 15. Typical Vgs(th) Vs.
Junction Temperature
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7
IRF7325PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCHES
MILLIMETERS
DIM
A
D
B
MIN
.0532
MAX
.0688
.0098
.020
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
b
c
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
D
E
e
0.25 [.010]
A
.1497
4
.050 BASIC
1.27 BASIC
e 1 .025 BASIC
0.635 BASIC
H
K
L
y
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
e1
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
A
F OOT PRINT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONT ROLLING DIMENS ION: MILLIMET ER
3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JE DE C OU T L INE MS -012AA.
5
6
7
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DATE CODE (YWW)
P = DE S I GNAT E S L E AD-F R E E
PRODUCT (OPTIONAL)
Y= LAST DIGIT OF THE YEAR
XXXX
F7101
WW = WEEK
INTERNATIONAL
RECTIFIER
LOGO
A = ASSEMBLYSITE CODE
LOT CODE
PART NUMBER
8
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IRF7325PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04
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9
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