IRF7324PBF [INFINEON]
HEXFET Power MOSFET(-20V, 0.018ohm); HEXFET功率MOSFET （ -20V ， 0.018ohm ）
| 型号： | IRF7324PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET(-20V, 0.018ohm) |
| 文件： | 总8页 (文件大小：164K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95460
IRF7324PbF
HEXFET® Power MOSFET
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Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.1mm)
Available in Tape & Reel
2.5V Rated
1
2
8
S1
G1
D1
VDSS = -20V
7
D1
3
4
6
S2
D2
5
G2
D2
RDS(on) = 0.018Ω
Lead-Free
Top View
Description
NewtrenchHEXFET® PowerMOSFETs fromInternational
Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area.
Thisbenefit,combinedwiththeruggedized device design
that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in battery and load management
applications.
SO-8
Absolute Maximum Ratings
Parameter
Max.
-20
Units
V
VDS
Drain-Source Voltage
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
-9.0
-7.1
A
-71
PD @TA = 25°C
PD @TA = 70°C
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
2.0
W
W
1.3
16
mW/°C
V
VGS
Gate-to-Source Voltage
± 12
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
°C
Thermal Resistance
Parameter
Max.
Units
RθJA
Maximum Junction-to-Ambient
62.5
°C/W
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1
6/29/04
IRF7324PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-20 ––– –––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.02 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.018
––– 0.026
-0.45 ––– -1.0
19 ––– –––
––– ––– -1.0
––– ––– -25
––– ––– -100
––– ––– 100
VGS = -4.5V, ID = -9.0A
VGS = -2.5V, ID = -7.7A
VDS = VGS, ID = -250µA
VDS = -10V, ID = -9.0A
VDS = -16V, VGS = 0V
VDS = -16V, VGS = 0V, TJ = 125°C
VGS = -12V
RDS(on)
Static Drain-to-Source On-Resistance
Ω
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = 12V
Qg
––– 42
––– 7.1
––– 12
63
11
18
ID = -9.0A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
pF
VDS = -16V
VGS = -5.0V
––– 17 –––
––– 36 –––
––– 170 –––
––– 190 –––
––– 2940 –––
––– 630 –––
––– 420 –––
VDD = -10V
ID = -1.0A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 10Ω
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = -15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
IS
-2.0
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
-71
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.2
––– 180 270
––– 300 450
V
TJ = 25°C, IS = -2.0A, VGS = 0V
TJ = 25°C, IF = -2.0A
ns
Qrr
nC di/dt = -100A/µs
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 10sec.
2
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IRF7324PbF
1000
100
10
1000
100
10
VGS
VGS
TOP
-4.5V
-3.5V
-2.5V
-2.0V
-1.5V
-1.3V
-1.0V
TOP
-4.5V
-3.5V
-2.5V
-2.0V
-1.5V
-1.3V
-1.0V
BOTTOM -0.75V
BOTTOM -0.75V
1
1
-0.75V
0.1
0.01
0.1
-0.75V
1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T = 25 C
J
°
T = 150 C
J
0.01
0.1
10
100
0.1
1
10
100
-V , Drain-to-Source Voltage (V)
DS
-V , Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
-9.0A
I =
D
100
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
1
°
T = 25 C
J
V
= -15V
DS
20µs PULSE WIDTH
V
=-4.5V
GS
0.1
0.5
1.0
1.5
2.0
2.5 3.0
3.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
-V , Gate-to-Source Voltage (V)
GS
T , Junction Temperature ( C)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRF7324PbF
5000
10
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
=
-9.0A
GS
C
= C + C
iss
gs
gd ,
V
=-16V
DS
C
= C
rss
gd
C
= C + C
4000
3000
2000
1000
0
oss
ds
gd
C
6
iss
4
2
C
oss
C
rss
0
1
10
100
0
10
20
30
40
50
60
-V , Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10us
100us
1ms
°
T = 25 C
J
°
T = 25 C
C
10ms
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
1.4
0.1
0.2
1
0.1
0.4
0.6
0.8
1.0
1.2
1.6
1
10
100
-V ,Source-to-Drain Voltage (V)
SD
-V , Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRF7324PbF
10.0
8.0
6.0
4.0
2.0
0.0
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
90%
Fig 9. Maximum Drain Current Vs.
V
DS
Case Temperature
Fig 10b. Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
P
0.02
0.01
DM
1
t
1
t
2
Notes:
1. Duty factor D =
SINGLE PULSE
(THERMAL RESPONSE)
t / t
1
2
2. Peak T =P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7324PbF
0.025
0.10
0.08
0.06
0.04
0.02
0.00
0.020
0.015
0.010
I
= -9.0A
D
V
= -2.5V
GS
V
= -4.5V
50
GS
2.0
2.5
3.0
3.5
4.0
4.5
0
10
20
30
40
60
V
Gate -to -Source Voltage (V)
GS,
-I , Drain Current (A)
D
Fig 12. Typical On-Resistance Vs.
Fig 13. Typical On-Resistance Vs.
Gate Voltage
Drain Current
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
VGS
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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IRF7324PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
INCHES
MIN MAX
.0532 .0688
MILLIMETERS
DIM
A
D
B
MIN
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040 .0098
b
c
D
E
.013
.0075 .0098
.189 .1968
.020
8
1
7
2
6
3
5
6
H
0.25 [.010]
A
.1497 .1574
.050 BASIC
4
e
1.27 BASIC
e1 .025 BASIC
0.635 BASIC
H
K
L
.2284 .2440
.0099 .0196
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
.016
0°
.050
8°
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F OOT PR INT
8X 0.72 [.028]
NOT ES :
1. DIMENSIONING& TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
4. OUT L INE CONF OR MS T O JEDE C OU T L INE MS -012AA.
5
6
7
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
6.46 [.255]
DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
DIMENSION IS THE LENGTH OF LEAD FOR SOLDERINGTO
ASUBSTRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
DAT E CODE (YWW)
P = DE S IGNAT E S L E AD-F RE E
PRODUCT (OPTIONAL)
Y = LAST DIGIT OF THE YEAR
WW = WE E K
XXXX
F7101
INTERNATIONAL
RECTIFIER
LOGO
A = AS S E MB LY S IT E CODE
LOT CODE
PART NUMBER
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7
IRF7324PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/04
8
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