IRF5NJ3315 [INFINEON]
POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.08ohm, Id=20A); 功率MOSFET N沟道（ VDSS = 150V ， RDS（ON） = 0.08ohm ，ID = 20A ）
| 型号： | IRF5NJ3315 |
| 厂家： | 
Infineon |
| 描述： | POWER MOSFET N-CHANNEL(Vdss=150V, Rds(on)=0.08ohm, Id=20A) |
| 文件： | 总7页 (文件大小：116K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94287A
HEXFET® POWER MOSFET
SURFACE MOUNT (SMD-0.5)
IRF5NJ3315
150V, N-CHANNEL
Product Summary
Part Number
BV
RDS(on)
ID
DSS
IRF5NJ3315
150V
0.08Ω
20A
Fifth Generation HEXFET® power MOSFETs from
International Rectifier utilize advanced processing
techniquestoachievethelowestpossibleon-resistance
per silicon unit area. This benefit, combined with the
fast switching speed and ruggedized device design
that HEXFET power MOSFETs are well known for,
providesthedesignerwithanextremelyefficientdevice
for use in a wide variety of applications.
SMD-0.5
Features:
n
n
n
n
n
n
n
n
Low RDS(on)
Avalanche Energy Ratings
Dynamic dv/dt Rating
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
These devices are well-suited for applications such
as switching power supplies, motor controls, invert-
ers, choppers, audio amplifiers and high-energy pulse
circuits.
Light Weight
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= -10V, T = 25°C Continuous Drain Current
20
12
D
GS
C
A
I
D
= -10V, T = 100°C Continuous Drain Current
C
GS
I
Pulsed Drain Current ➀
Max. Power Dissipation
80
DM
@ T = 25°C
P
75
W
W/°C
V
D
C
Linear Derating Factor
0.6
V
Gate-to-Source Voltage
±20
165
12
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
mJ
A
AS
I
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
7.5
mJ
V/ns
AR
dv/dt
3.0
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Package Mounting Surface Temperature
Weight
300 (for 5 s)
1.0 (Typical)
For footnotes refer to the last page
www.irf.com
1
9/11/01
IRF5NJ3315
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
150
—
—
—
—
V
V
= 0V, I = 250µA
D
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.18
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
0.08
Ω
V
= 10V, I = 12A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
12
—
—
—
—
—
4.0
—
V
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
DS
= 15V, I
= 12A ➀
DS
I
25
250
V
= 150V ,V =0V
DSS
DS GS
µA
—
V
= 120V,
DS
= 0V, T =125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
95
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=10V, I = 12A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
FallTime
11
47
V
= 120V
DS
t
t
t
t
25
V
= 75V, I = 12A,
DD
GS
D
60
75
V
=10V, R = 5.1Ω
G
ns
d(off)
f
60
L
+ L
Total Inductance
—
S
D
Measured from the center of
nH
drain pad to center of source pad
C
C
C
Input Capacitance
—
—
—
1370
300
160
—
—
—
V
= 0V, V
= 25V
iss
GS
DS
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
20
80
S
A
SM
V
t
1.3
260
1.7
V
ns
T = 25°C, I = 12A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
T = 25°C, I = 12A, di/dt ≤ 100A/µs
j
F
Q
Reverse Recovery Charge
µC
V
DD
≤ 25V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
Junction-to-Case
—
—
1.67
°C/W
thJC
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
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IRF5NJ3315
100
10
1
100
10
1
VGS
15V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
T = 150 C
J
20µs PULSE WIDTH
T = 25 C
J
°
°
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
10
1
2.5
2.0
1.5
1.0
0.5
0.0
20A
=
I
D
°
T = 25 C
J
°
T = 150 C
J
= 50V
V
DS
20µs PULSE WIDTH
V
= 10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160
4.0
5.0
V
6.0
7.0
8.0 9.0 10.0
°
T , Junction Temperature( C)
J
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs.Temperature
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3
IRF5NJ3315
2500
2000
1500
1000
500
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 12A
GS
V
V
V
= 120V
= 75V
= 30V
C
= C + C
DS
DS
DS
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
oss
ds
gd
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
0
10
100
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-SourceVoltage
Gate-to-SourceVoltage
100
10
1
1000
OPERATION IN THIS AREA
°
T = 150 C
J
LIMITED BY R
(on)
DS
100
10
1
°
T = 25 C
J
1ms
10ms
Tc = 25°C
Tj = 150°C
V
= 0 V
Single Pulse
GS
0.1
0.4
0.1
0.8
1.2
1.6
1
10
100
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
ForwardVoltage
4
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IRF5NJ3315
20
16
12
8
RD
VDS
VGS
D.U.T.
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
V
DS
90%
0
25
50
75
100
125
150
°
, Case Temperature ( C)
T
C
10%
V
GS
Fig 9. Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
x
Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRF5NJ3315
400
300
200
100
0
I
D
TOP
5.4A
7.6A
BOTTOM 12A
15V
DRIVER
L
V
D S
D.U.T
AS
.
R
G
+
V
D D
-
I
A
2V
GS
t
0.01
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature( C)
J
V
(BR )D SS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
Q
+
G
V
DS
D.U.T.
-
10V
Q
Q
GD
GS
V
GS
3mA
V
G
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
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IRF5NJ3315
Footnotes:
Repetitive Rating; Pulse width limited by
I
≤12A, di/dt ≤ 120 A/µs,
SD
maximum junction temperature.
V
≤ 150V, T ≤ 150°C
J
DD
Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
V
= 50 V, Starting T = 25°C, L= 2.3mH
J
DD
Peak I
= 12A, V
= 10 V, R = 25Ω
AS
GS
G
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 09/01
www.irf.com
7
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